R07DS0352EJ0200 Search Results
R07DS0352EJ0200 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RJP30E3
Abstract: rjp30e3dpk RJP30e
|
Original |
RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3 rjp30e3dpk RJP30e | |
|
Contextual Info: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ |
Original |
RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A | |
RJP30E3Contextual Info: Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ |
Original |
RJP30E3DPK-M0 R07DS0352EJ0200 PRSS0004ZH-A RJP30E3 |