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Catalog Datasheet	MFG & Type	Document Tags	PDF
RJH60F4 Abstract: No abstract text available Text: Preliminary Datasheet RJH60F4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0325EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) • Built in fast recovery diode in one package	Original	RJH60F4DPQ-A0 R07DS0325EJ0100 PRSS0003ZH-A O-247A) RJH60F4	PDF

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RJH60F4

Abstract: No abstract text available
Text: Preliminary Datasheet RJH60F4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0325EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25°C) • Built in fast recovery diode in one package

Original

RJH60F4DPQ-A0 R07DS0325EJ0100 PRSS0003ZH-A O-247A) RJH60F4

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