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Contextual Info: Preliminary Datasheet RJH60F0DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0324EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package |
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RJH60F0DPQ-A0 R07DS0324EJ0100 PRSS0003ZH-A O-247A) |