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Contextual Info: Preliminary Datasheet HAT2203C R07DS0323EJ0600 Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS on = 69 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device |
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HAT2203C R07DS0323EJ0600 PWSF0006JA-A N2886-9022/9044 |