Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0500 Previous: REJ03G1278-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A) Low drive current High speed switching
|
Original
|
RQK0605JGDQA
R07DS0309EJ0500
REJ03G1278-0400)
PLSP0003ZB-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQK0605JGDQA R07DS0309EJ0500 Previous: REJ03G1278-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 82 m typ (VGS = 10 V, ID = 1.5 A) Low drive current High speed switching
|
Original
|
RQK0605JGDQA
R07DS0309EJ0500
REJ03G1278-0400)
PLSP0003ZB-A
|
PDF
|