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    RJH60F4

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 Previous: REJ03G1835-0200 Rev.3.00 Nov 17, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60F4DPK R07DS0235EJ0300 REJ03G1835-0200) PRSS0004ZE-A RJH60F4

    RJH60F4

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60F4DPK R07DS0235EJ0300 Previous: REJ03G1835-0200 Rev.3.00 Nov 17, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60F4DPK R07DS0235EJ0300 REJ03G1835-0200) PRSS0004ZE-A RJH60F4