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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03H1DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0216EJ0200 Power Switching Rev.2.00 Dec 07, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK03H1DPA R07DS0216EJ0200 PWSN0008DC-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03H1DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0216EJ0200 Power Switching Rev.2.00 Dec 07, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK03H1DPA R07DS0216EJ0200 PWSN0008DC-B curren9044