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Contextual Info: Preliminary Datasheet H7N1004FM R07DS0209EJ0200 Previous: REJ03G0073-0100 Rev.2.00 Dec 02, 2010 Silicon N-Channel MOSFET High-Speed Power Switching Features • Low on-resistance RDS(on) = 25 m typ. Low drive current Available for 4.5 V gate drive |
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H7N1004FM R07DS0209EJ0200 REJ03G0073-0100) PRSS0003AD-A O-220FM |