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rjh60d2 Abstract: RJH60 rjh60d Contextual Info: Preliminary Datasheet RJH60D2DPE R07DS0159EJ0200 Previous: REJ03G1842-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D2DPE R07DS0159EJ0200 REJ03G1842-0100) PRSS0004AE-B t9044 rjh60d2 RJH60 rjh60d	PDF

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rjh60d2

Abstract: RJH60 rjh60d
Contextual Info: Preliminary Datasheet RJH60D2DPE R07DS0159EJ0200 Previous: REJ03G1842-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)

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RJH60D2DPE R07DS0159EJ0200 REJ03G1842-0100) PRSS0004AE-B t9044 rjh60d2 RJH60 rjh60d

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