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    RJK0653DPB

    Contextual Info: Preliminary Datasheet RJK0653DPB R07DS0078EJ0102 Previous: REJ03G1760-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		RJK0653DPB R07DS0078EJ0102 REJ03G1760-0101) PTZZ0005DA-A cur9044 RJK0653DPB PDF

    RJK0653DPB

    Abstract: RJK0653
    Contextual Info: Preliminary Datasheet RJK0653DPB R07DS0078EJ0102 Previous: REJ03G1760-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		RJK0653DPB R07DS0078EJ0102 REJ03G1760-0101) PTZZ0005DA-A Ava9044 RJK0653DPB RJK0653 PDF