R07DS0017EJ0100 Search Results
R07DS0017EJ0100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Preliminary Data Sheet NP74N04YUG R07DS0017EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP74N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 5.5 mΩ MAX. (VGS = 10 V, ID = 37.5 A) |
Original |
NP74N04YUG R07DS0017EJ0100 NP74N04YUG AEC-Q101 | |
NP74N04YUGContextual Info: Preliminary Data Sheet NP74N04YUG R07DS0017EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP74N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 5.5 mΩ MAX. (VGS = 10 V, ID = 37.5 A) |
Original |
NP74N04YUG R07DS0017EJ0100 NP74N04YUG AEC-Q101 |