R-1 PACKAGE Search Results

Contextual Info: • 3 H A R 0054130 R I lût ■ HAS I R S I R F F 1 1 F R F 1 1 / 1 1 1 / 1 1 1 R / 1 / 1 1 1 2 R 2 / 1 1 3 1 3 R / 1 N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 19 91 Package Features T0 -20 5A F BOTTOM VIEW • 3.0A and 3.5A, 80V - 100V

Contextual Info: • 43 022 71 O O S M CH O 77T ■ H A R R I HAS S I R F D 1 1 0 / 1 1 1 / 1 1 2 / 1 1 3 I R F D 1 1 0 R / 1 1 1 R / 1 1 2 R / 1 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features 4-PJN DIP • 1A and 0.8 A , 8 0 V - 100V

1RF610

Abstract: IRFS10 IRF611 IRF N-Channel Power MOSFETs IRF612 IRF613 IRF610R IRF611R IRF612R IRF613R
Contextual Info: 2 H A R R I S I R I R F 6 1 O F R 6 1 / 6 / 6 1 1 R 1 / 6 1 1 / 6 2 1 R 2 / 6 / 6 1 1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Features Package TO -22D A B TOP VIEW • 2.6A and 3.3A, 150V - 200V • l'DSion) = 1-5H and 2.4i l

ff-310

Contextual Info: • 4 3 0 2 5 7 1 2 3 H A o o s m y o R R 1 1 3 ■ HAS I S I R F F 3 1 0 / 3 1 1 / 3 1 2 / 3 1 3 I R F F 3 1 O R / 3 1 1 R / 3 1 2 R / 3 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TQ-205AF • 1.35A and 1.15A, 350V - 400V

FF212R

Abstract: 4440 ic circuit diagram
Contextual Info: J J Ì H A R R I S I I R F F 2 R 1 R F 2 1 2 1 1 / / 2 R 1 / / 1 2 1 2 2 1 R 2 / / 2 2 1 1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features • F Package T 0 -2 0 5 A F 1 .8 A a n d 2 .2 A , 1 5 0 V - 2 0 0 V BOTTOM VIEW • rD S o n = 1 -5 f l a n d 2 . 4 f l

Contextual Info: H A R R I S IR F 1 3 0 /1 3 1 /1 3 2 /1 3 3 IR F 1 3 0 R /1 3 1 R /1 3 2 R /1 3 3 R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features TO-204AA • 12A and 14A, 80V - 100V • rDS{on = 0 .1 6 0 and 0.23Î2 DRAIN FLANGE) SOURCE

FD213

Contextual Info: 3 ] H A R R I S ÎR F D 2 1 0 /2 1 1 /2 1 2 /2 1 3 IR F D 2 1 0 R /2 1 1 R /2 1 2 R /2 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP TOP VIEW • 0.6A and 0.45A, 150V - 200V • rDS on = 1-5 fl and 2-4 n

44-PIN

Contextual Info: BOTTOM VIEW TOP VIEW -D D3 - —FD-l 44 44 HIM 33_ / 1— r r •— r r 1— r r 1— r r 1— r r o SL Ie T + 11 ■J D 1 - - B- E3 E L1 ~n—11 ~n— 1 ~n— 1 ~n— 1 ~n— 1 ■—u 1— r r ■— r r 1— r r ■— r r

mosfet 4456

Abstract: 1RFF312R 4456 mosfet LT 312r 1RFF312
Contextual Info: 3 ] H A R R I S IRFF3 1 0 /3 1 1 /3 1 2 / 3 1 3 IRFF3 1 OR/3 1 1 R/3 1 2 R/3 1 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TQ-205AF • 1.35A and 1.15A, 350V - 400V • rDS on = 3-Bfl and 5 .0 fl • Single Pulse Avalanche Energy Rated*

Contextual Info: 43 32271 H A Q0S413S R R ?b ô • HAS I S IR F F 1 2 0 /1 2 1 /1 2 2 /1 2 3 IR F F 1 2 0 R /1 2 1 R /1 2 2 R /1 2 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 0 5 A F • 5.0A and 6.0A, 80V - 100V • rDS(on = 0 .3 0H and 0 .40H

SC-1244

Contextual Info: '» r SIERRA SEMICONDUCTOR SC11482/SC11483/SC11484/SC12482/SC12483/SC12484 32K HiCOLOR Color Palette 28-P IN DIP PACKAGE □ S u p p o r ts 5 - 5 -5 H iC O L O R 1 5 O v e r la y R e g is te r s S C 1 1 4 8 2 /S C 1 1 4 8 4 /S C 1 2 4 8 2 / f o r m a t (3 2 ,7 6 8 c o lo r s

Contextual Info: Package outline Plastic single-ended multi-chip package; 6 interconnections; 3 in-line leads SOT1288-2 E section A-A HE1 B 1 , r L1 C center of reading point K1 0.2 B 0.2 C (1), r bp1 Q D D2(2) L (1) (1), r (1), r (1) HE D1 A A pin 1 index A (1) L2 0.4 B

5218 op amp

Abstract: 5218 a op amp
Contextual Info: Speech Ils S e r ia l V o ic e R e g is t e r s / R O M s [i] Pina/Package Organization | Capacity Active Current M S M 6389A S erial v o ice re g is te r 1B /Q F J, 1 6 /D IP 1,048,576x 1 1 1 M eg 5 mA M SM 6586 S erial voice re g is te r 1 8 /Q F J 262,144x 1

e14B

Abstract: IRF1401 141r IRF140
Contextual Info: ¡ 2 H A R R IR F 14 0 / 1 4 1 / 1 4 2 / 1 4 3 I S IR F 1 40R /14 1 R /14 2 R /1 4 3 R A u g u st N-Channel Power MOSFETs Avalanche Energy Rated* 1991 Package Features TO -2Q 4AE • 28A and 25A, 80V - 100V • rDS on = 0 .0 7 7 i! and 0 .1 0 ii • Single Pulse Avalanche Energy Rated*

NJU6432

Contextual Info: LCD DRIVER/CONTROLLER SERIES LINE-UP • L I N E —UP 1 Type No. NJU6460A F U N C T I O N F E A T U R E S 1 6 - c h a r a c t e r / 1 - line Dot M a t r ix LCD C o n tro l I e r D riv e r PACKAGE • 1 C h ip Dot M a trix LCD C o n t r o lle r D r iv e r

JRF510

Abstract: 1RF511
Contextual Info: IR F510/51 1 /5 1 2 /5 1 3 2 ] H A R R IS IR F51 O R /5 1 1 R /5 1 2 R /5 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 2 0 A B • 4 .9 A a n d 5 .6 A , 8 0 V - 1 0 0 V T O P V IE W • rD S ° n = 0 - 5 4 i i a n d 0 .7 4 £1

IRF331R

Abstract: IR 331 G F331R F330R
Contextual Info: [ 2 H A R R I R F 3 3 0 / 3 3 1 / 3 3 2 / 3 3 3 I S I R F 3 3 0 R / 3 3 1 R / 3 3 2 R / 3 3 3 R N-Channel Power M O SFETs Avalanche Energy Rated* August 19 9 1 Package Features T 0 -2 0 4 A A B O TT O M VIEW • 4 .5 A an d 5 .5A , 3 5 0 V - 4 0 0V • r D S o n = 1 . 0 0 a n d 1 . 5 i l

B4110

Abstract: R2130 R-2139 R4130 R4139R
Contextual Info: Chip Package 1.0 x 5.0mm 0.8" L e a d R ecta n gu la r Flangeless 1.0 x 5.0mm 1 " Le ad High Perfor­ m ance R e cta ngula r 2 5 x 7 0m m 1 ' Lead R e cta n gu la r 5.0 x 5.0mm 0.8" L e a d R e cta ngula r 5.0 x 5.0mm 1 " L ead High Perfor­ m ance R e cta ngula r

Contextual Info: • M302271 DÖSm4S HARRIS b07 ■ HAS IRFF2 10/ 2 1 1 / 2 1 2 /2 1 3 IRFF2 1 0 R /2 1 1 R /2 1 2 R /2 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 0 5 A F BOTTOM VIEW • 1 .8 A and 2.2A, 150V - 200V • rDS on = 1 -5 il and 2 .4 Cl

Contextual Info: A S P -1 9 3 8 7 - 1 0 NOTES: 1. LEAVE 1st ROW UNFILLED. 2. R E P R E SS TO DIM SHOWN 3. P A R T S TO BE BULK PACKAGED. m r ,1 3 0 ± .0 0 8 = FILLED POSITIONS .730 REF .1000 TYP = UNFILLED POSITIONS .16 0 ± .0 1 0 .200 R E F IN — P R O C F S S 3 2 .5 0 0 ±

IRF9131

Abstract: 1RF9131 92CS-43298 1RF9130
Contextual Info: H a r r i s I R F I R F 9 9 1 1 3 3 2 , , I R F 9 1 3 1 I R F 9 3 1 3 Avalanche Energy Rated P-Channel Power MOSFETs Ja n u ary 1 9 9 4 F e a tu re s Package T 0 -2 0 4 A A BOTTOM VIEW • -10 A and -12A , -8 0 V and -100V • rDS ON = 0.30Î1 and 0 .4 0 fl

sot-36

Abstract: sot36 SMD USM
Contextual Info: Pakages Available • 2 leads type Package Unit : mm USM DSM r “i r“i 1.25 Body dimension Actual size Enlarged (x3 .0) PSM r"1 1.25 1.7 2.6 1.7 • 4.5 1 ■ # # #M ini mold type (Unit : mm) Package r 2. 0 -n r 1 Body dimension 1606 (0603) 2125 (0805)

10N15L

Abstract: P10N15L RFP10N12L
Contextual Info: R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L gì h a r r is N - C h a n n e l L o g ic Level P o w e r F ie l d - E f f e c t T r a n s is to r s L 2 F ET August 1991 Package F e a tu re s T O -2 0 4 A A • 10A, 120V and 150V BOTTOM VIEW • rDS(0N) = 0 .3 fl

Contextual Info: R-2R Ladder Network Resistors Make Possible R-2R Ladder Network R-2R Ladder Network R-2R Series Seriestolerance • ±2%R-2R Absolute • Ladder accuracy +/- 1 LSB ±2% Absolute tolerance • 8 and 10 bit R-2R Schematic Ladder accuracy +/- 1 LSB • QSOP Package - Small Footprint