R 2A, TRANSISTOR Search Results

l78s12cv

Abstract: L78S05CV L785XX L78S L78S15CV L78S12CT L78s09cv L78S18CT
Contextual Info: r z 7 S G S TH O M SO N R iiœ m Œ O T O K S L78S00 S E R IE S 2A POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT TO 2A ■ OUTPUT VOLTAGES OF 5 ; 7.5 ; 9 ; 10 ; 12 ; 15 ; 18; 24V ■ THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION ■ OUTPUT TRANSISTOR SOA PROTECTION

2DB1188P

Abstract: P23Q
Contextual Info: 2DB1188P/Q/R 32V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -32V  Case: SOT89   IC = -2A high Continuous Current Low saturation voltage VCE sat < 800mV @ 2A  Case material: Molded Plastic, "Green" Molding Compound.

Contextual Info: H A R R IS X RFW2N06RLE Semiconductor 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET juiy 1998 Description Features 2A, 60V The RFW 2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which

Logic Level N-Channel Power MOSFET

Contextual Info: i n t e RFW2N06RLE r r i i D a ta S h e e t J u ly 1999 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r 2838.3 Features • 2A.60V The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET

Contextual Info: H a r r is I J U S E M I C O N D U C T O R FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 2A, 500V, RDS on = 2.5012 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

2SD1761

Abstract: 2SB1187 TRANSISTOR NPN, p2a 2SD1781 2Sd178 2SB1187 transistor le2a
Contextual Info: h -7 > i> 9 /Transistors 2SD1761 2SD1761 Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • «4ft 1 VcEt-.l-OSVfTyp.) if U '. J; ^ • / D im e n s io n s U n it : m m ) (at le /ÌB = 2A /0 2A) 21 3) P c = 3 0 W t * i ' . ' r r c - 2 S X : ) ,

Contextual Info: tyvvys S RFP2N08L, RFP2N10L S e m ico n d ucto r 7 2A, 80V and 100V, 1.05 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 2A, 80V and 100V The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors

kt183

Contextual Info: r= 7 S C S -T H O M S O N * 7 # » R fflD ^ Q [ iL i© ci r ( Q ) i O ( g i L4972A L4972AD 2A SWITCHING REGULATOR . 2A OUTPUT CURRENT . 5.1 V TO 40V OUTPUT VOLTAGE RANGE •0 TO 90% DUTY CYCLE RANGE i INTERNAL FEED-FORWARD LINE REG. i INTERNAL CURRENT LIMITING

ZTX750

Abstract: ZTX650 100-C ZTX751 ZTX752 ZTX753 ferranti c6011 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES SE74
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation a t Tamb = 25*C t • 2A continuous lc • • Excellent gain characteristics to 2A High V CE0: up to 100 volts

Contextual Info: W vys / RFP2N12L, RFP2N15L S e m ico n d ucto r 7 2A, 120V and 150V, 1.75 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 2A, 120V and 150V The RFP2N12L and RFP2N15L are N-Channel enhance­ ment mode silicon gate power field effect transistors specifi­

Contextual Info: h a r ^ IRFF9220, IRFF9221, IRFF9222, IRFF9223 s s e m i c o n d u c t o r -2A and -2.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -2A and -2.5A, -150V and -200V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and

Contextual Info: RFL2N05, RFL2N06 S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

l78s24ct

Abstract: L78S L78S12CT
Contextual Info: rZ Z Ä 7 # S G S -T H O M S O N L78S00 S E R IE S 2A POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT TO 2A' ■ OUTPUT VOLTAGES O F5 ; 7.5 ; 9 ; 10 ; 12 ; 15 ; 1 8 ; 24V ■ THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION ■ OUTPUT TRANSISTOR SOA PROTECTION

STN2NF06

Contextual Info: STN2NF06 N - CHANNEL 60V - 0.12Ω - 2A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN2NF06 60 V < 0.15 Ω 2A TYPICAL RDS(on) = 0.12 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED

Contextual Info: RFL2N05, RFL2N06 fÇ j HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

Contextual Info: RFP2N08, RFP2N10 HARRIS S E M I C O N D U C T O R 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2A, 80V and 100V • Linear Transfer Characteristics These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as

Contextual Info: RFP2N20 interdi Data Sheet J u ly 1999 F ile N u m b e r 2 8 8 1 .2 Features 2A, 200V, 3.500 Ohm, N-Channel Power MOSFET • 2A .200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

ZTX753

Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts

Contextual Info: RFL2N05, RFL2N06 HARRIS S E M I C O N D U C T O R 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2A, 50V and 60V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

STN2NF06

Contextual Info: STN2NF06 N - CHANNEL 60V - 0.12Ω - 2A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN2NF06 60 V < 0.15 Ω 2A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.12 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

STS2DNE60

Contextual Info: STS2DNE60 DUAL N-CHANNEL 60V - 0.180Ω - 2A SO-8 STripFET POWER MOSFET TYPE STS2DNE60 • ■ ■ VDSS R DS on ID 60 V < 0.23 Ω 2A TYPICAL RDS(on) = 0.180Ω LOW THRESHOLD GATE DRIVE STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY DESCRIPTION

2A SOT23

Abstract: stp6
Contextual Info: STT2PF60L P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS R DS on ID STT2PF60L 60 V <0.25 Ω 2A TYPICAL RDS(on) = 0.20 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STN2NE10L

Contextual Info: STN2NE10L N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE STN2NE10L • ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.4 Ω 2A TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

STN2NE10

Abstract: P008B DIODE
Contextual Info: STN2NE10 N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STN2NE10 100 V < 0.4 Ω 2A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED