R 143 156 000 Search Results

rb57

Contextual Info: Precision Wirewound Resistors A X IA L LEAD Series 100 LEAD LENGTH LENG TH L MO STYLE 133 139 144 115 156 143 137 136 132 138 134 170 146 180 190 M il R-93 EQUIV. RB56 RB55 RB54 RB53 RB52 RB57 RB58 RB59 INCH ± .0 3 2 .500 .700 .250 .340 .375 .500 .750 .610

R143018

Abstract: R 143 018 000 R 143 156 000 R143008 R143
Contextual Info: TNC CABLE CLAMP TYPE FOR FLEXIBLE CABLE Straight plug CABLE GROUP .102 2.6 /5 0 + 75 R 143 004 000 PART NUMBER .4 3 3 (1 1 )/flats • 4 3 3 (ll)/flats _ Captive contact YES Assem bly instructions M04 page 29 Straight plugs CABLE GROUP .197 (5 )/5 0 .236 (6) / 75 + 93

13001 6D 331

Abstract: 13001 8D 331 13001 s 8d
Contextual Info: BUCHANAN A ll T y c o E le c tr o n ic s P a r t N u m b e r s w it h o u t a c o r r e s p o n d in g B U C H A N A N P a r t N u m b e r a r e lis te d a s b a s e p a r t n u m b e r s o n ly . C o m p le te p a r t n u m b e r s w ith p r e fix e s a n d / o r s u ff ix e s a r e s h o w n o n t h e

Contextual Info: SCIENTIFIC/ MINI-CIRCUITS 4TE ]> • flObflflll 0001M57 b51 « S C C very low distortion Frequency Mixers LEVEL 17S -H7dBm LO, up to + 14dBm RF LRMS-2H computer-automated performance data typical production unit / for data of other models consult factory

Contextual Info: SCIENTIFIC/ MINI-CIRCUITS iHE T> • flObflflll 0001M57 b51 « S C C very low distortion Frequency Mixers LEVEL 17S + ^ d B m ^ LO, up to + 14dBm RF LRMS-2H computer-automated performance data typical production unit / for data of other models consult factory

ATF-26100

Abstract: AT-10600 4sut ATF26100 ATF26100-GP3
Contextual Info: HEWLETT-PACKARD/ m CPIPNTS b lE ]> • 4447SA4 PACKARD 73b ■HPA Chip Outline Features • • • 000^32 ATF-26100 AT-10600 2-18 GHz General Purpose Gallium Arsenide FET HEW LETT Low Noise Figure: 1.8 dB typical at 12 GHz High Associated Gain: 9.0 dB typical at 12 GHz

2SC1600

Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is

ASSEMBLY INSTRUCTIONS Radiall

Abstract: R143018 Radiall 321 007 000 ASSEMBLY INSTRUCTIONS Radiall crimp 02 Radiall 161 256 000 RRU 32 ASSEMBLY INSTRUCTIONS Radiall solder 02 R 143 018 000 R 143 156 000 3549B
Contextual Info: ASSEMBLY INSTRUCTIONS W asher M01 B ack n u t I T Body réducteur ▼ & C e n te r C o n ta c t G asket B ra id c la m p ▼ D C O NNECTO RS R 143 052 000 R 143 337 000 1-1 2-1 2-2 Strip cable. .205 5,2 Fit back nut, washer, gasket and braid clam p, reducing adaptor.

Contextual Info: SCIENTIFIC/ MINI-CIRCUITS HTE D • BDbaail 0001353 Q2S HISCC plug-in, surface-mount Frequency Mixers mo^ I CV/CI "7 TUF' 5 TUF-5SM LbVbL / +7 dBm LO, up to +1 dBm RF ^7 computer-automated performance data typical production unit / for data of other models consult factory

758889

Abstract: ci 3842 4833 TUF-2SM CI 4940 CI 4066
Contextual Info: SCIEN TIFIC / M IN I-CIRCU ITS MTE ] • fiObflflll 00013m 303 B S C C plug-in, surface-m ount Frequency Mixers M odels t-74-09-0i I C \ / C I -7 LEVEL 7 +7 dBm LO, up to TUF' 2 +^ dBm RF) TUF-2SM computer-automated performance data typical production unit / for data of other models consult factory

2SC1593

Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
Contextual Info: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is

Contextual Info: SSMC Bulkhead Mounted Receptacles S tr a ig h t B u lk h e a d J a c k R e c e p ta c le s .093" max panel thickness F ro n t m o u n t R e ar m o u n t -.080 I*-. 126* .036 dia. PI "f .020 dia. Hex 5/32 A. F. Hex 3/16 A. F. tolerance +.003, -.000 7004-1512-000

Contextual Info: SC IEN TIFIC / M INI-C IRC UITS ^C ^Z D • f lO b f lf il l 000 143 1 34S * S C C su rfa ce -m o u n t T-74-09-0] Frequency M ixers Models LEVEL 7 LRMS-2D + 7dBm LO, up to + 1dBm RF com puter-autom ated perform ance data typical production unit / for ctata of other models consult factory

5059 mixer

Abstract: 35X14 23128 E 70 5059
Contextual Info: SC IEN TIFIC/ M IN I-CIR CUITS ^C^Z D • flObflfill 0001431 345 * S C C surface-m ount T-74-09-0] Frequency Mixers Models LEVEL 7 + 7dBm LO, up to + 1dBm RF LRMS-2D computer-automated performance data typical production unit / for data of other models consult factory

MS27212

Abstract: MIL-T-55155 D1277B MS25036-102 MS25435 MS27429 MS20659-126 MIL-T-16366 M81824 MIL-T-15659
Contextual Info: MIL-STD-l277B 28 December 1983 SUPERSEDING MIL-S- D-1277A 22 Ju’y 1970 MILITARY STANDARD SPLICES, TERMINALS, TERMINAL BINDING POSTS, TERMINAL JUNCTION SYSTEMS, WIRE CAPS; ELECTRICAL BOARDS, MIL-STD-1277B I EPARTMENTOF I)EF13NSI: WASI{INGTON. D.C. ‘20301

TRANSISTOR BC 136

Abstract: TRANSISTOR SOT-23 marking JE
Contextual Info: TELEFUNKEN ELECTRONIC fllC P • a^HDO^b 0005301 b B A L G G BFR 96 M electronic T 'J /-U Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz range specially for wide band antenna amplifier Features: • High power gain

PT 2102 ic

Abstract: 2N6679 HXTR-2101TXV HXTR-4101 HPAC-70GT HXTR-6106 6105T HXTR-2101 HXTR-6105 HXTR-2001
Contextual Info: HEWLETT-PACKARD-. CMPNTS EOE t C3 M4M7SflM 0005512 2 □ 181 t S S ä S General Purpose Transistors HXTR-2001 Chip Technical Data • High Gain 11 dB Typical at 4 GHz • Low Noise Figure 3.8 dB Typical at 4 GHz • High O utput Pow er 20 dBm Typical PldB at

transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK
Contextual Info: 17E T> TELEFUNKEN ELECTRONIC • 0^2DDBb 000^30^ BC 635 • BC 637 • BC 639 TTIILIIFIUIÄINI electronic Creative 'ftehnotag>ea r - a i -33 Silicon NPN Epitaxial Planar Transistors Applications: For complementary AF driver stages features: • • High power.dissipation

Contextual Info: RECTANGULAR TONGUE TERM INALS/M IL-T-7928 Rectangular tongue insulated terminals are covered by MS-17143 ships . rr\. m o le x Molex-ETC Military Specifications M S -1 7 1 4 3 Type II Insulated •i Molex-ETC Order No. 19102-0001 1 and 2 -2 19102-0002

TCM8230MD I2C

Abstract: TCM8230MD TCM8230MDA TCM8230 color tv block diagram sensor photo QCIF* tcm8230md toshiba filtering "average pixel value" ITU656 RGB565
Contextual Info: TCM8230MD A Ver. 1.20 TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8230MD (A) TENTATIVE VGA CAMERA MODULE The TCM8230MD(A) is a camera module which includes area color image sensor embedded with camera signal processor that meets with VGA format. In the sensor area 492 vertical and 660 horizontal signal pixels, and the image

2SC2407 equivalent

Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The

BZWO4

Contextual Info: GENERAL INSTRUMENT CORP/ DSE D | BÛTOIB? 0003271 ? T-n-23 • v^> g l a s s p a s s iv a t e d GENERAL INSTRUMENT V O LT A G E R A N G E 6.6 to 440 Volts 400 Watt Peak Power 1.0 Watt Steady State m D O -41 FEATURES • Plastic package has Underwriters Laboratory

Avantek UA-152

Contextual Info: AVANTEK INC 50E D Q avantek • 1141%h 0GQb73M MSF-86 Series Silicon Bipolar MMIC Frequency Converter 3 “ T-74 -OÖ \ Functional Block Diagrams Features • Up or Down Frequency Conversion with up to 12 dB Conversion Gain • RF input from 0.1 to 2.0 GHz

2SC2407

Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
Contextual Info: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli­