R 104N Search Results

Contextual Info: PART NUMBER: 104NPS050M B I-P O L A R S U R F A C E M O U N T ALU M IN U M E L E C T R O L Y T IC C A P A C IT O R S P a r ts a r e R o H S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e R o H S : 2 6 ELECTRICAL SPECIFICATIONS C ap acitan c e: 0.1 uF

13001 6D 331

Abstract: 13001 8D 331 13001 s 8d
Contextual Info: BUCHANAN A ll T y c o E le c tr o n ic s P a r t N u m b e r s w it h o u t a c o r r e s p o n d in g B U C H A N A N P a r t N u m b e r a r e lis te d a s b a s e p a r t n u m b e r s o n ly . C o m p le te p a r t n u m b e r s w ith p r e fix e s a n d / o r s u ff ix e s a r e s h o w n o n t h e

KD502

Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46
Contextual Info: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71

Contextual Info: M O S E L V fT E L iC V53C 104N H IG H PER FO RM A N CE, 3 .3 VO LT 2 5 6 K X 4 B IT F A S T P A G E M O D E C M O S D Y N A M IC R A M H IG H P E R F O R M A N C E V 5 3 C 1 0 4 N Max. RAS Access Time, ' RAC Max. Column Address Access Tim e, tCAA 6 0 /6 0 L

Contextual Info: 1>2’4 M E Gx64 MICRQN I NONBUFFERED DRAM DIMMs TECHNOLOGY, INC. H R AM MT4LDT164A X , MT8LD264A(X), MT16LD464A(X) U r iM IV I R A IV I I I ! For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html

Contextual Info: M I C I P I R R A O N 4’ 8 M r » IVI R A M T 4 L D T 4 6 4 A X , v l I M EG x 64 NONBUFFERED DRAM DIMMs M T 8 L D T 8 6 4 A (X ) F or the latest data sheet revisions, please refer to the Micron Web site: www.m icron.com/m ti/msp/htm l/datasheet.htm l

Contextual Info: M I C I n n R O N 8 >16 >32 M E G x 64 NONBUFFERED DRAM DIMMs MT8LD864A X, MT16LD1664A X, MT32LD3264A X A M U r iM IV I R A I IVI I I F or the latest data sheet revisions, please refer to the Micron Web site: www.m icron.com/m ti/msp/htm l/datasheet.htm l

Contextual Info: IBM11N1645B IBM11N1735B 1M x 64/72 DRAM Module mmnri r r i,„ , ^", | Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module

Contextual Info: KM44V16004C,KM44V16104C CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fam ily of 16 ,777,216 x 4 bit Extended Data O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access o f m em ory cells w ithin the sam e row. R efresh cycle 4K Ref. o r 8K Ref. , access tim e (-45, -5, o r -6), po w e r co n sum p tion(N orm a l

ic tda 894

Abstract: tda 894 j tgs 882 TS9347 equivalent asm 8048 SEMI-GRAPHIC mP 8048
Contextual Info: f= J ^ 7 S G S -T H O M S O N M , TS9347 R Ä ID g ® li[ U i( S T r ® ® R ! lD ( g i SINGLE CHIP SEMI-GRAPHIC DISPLAY PROCESSOR • SINGLE CHIP LOW-COST CRT CONTROL­ LER ■ UP TO 60 Hz SCREEN REFRESH RATE ■ 32 KBYTE DEDICATED MEMORY ADDRESS­ ING SPACE

Contextual Info: Panasonic CCD Area Image Sensor MN3726MFE, MN3726MAE 6mm 1/3 inch 512H High-Resposivity CCD Area Image Sensors •O verview I Pin Assignments T y p e N o. M N 3726M FE M N 3726M A E S ize 6 m m (1/3 inch) S y stem Area | C o lo r o r B /W PAL C o lo r C C IR

Contextual Info: +85°C Non-Polar Surface Mount Chip Aluminum Electrolytic Capacitors A u d io C o u p lin g S o lv e n t P r o o f W i d e C a p a c i t a n c e R a n g e : .1 to 4 7 p F O p e r a t in g V o lt a g e R a n g e : 6 . 3 W V D C to 5 0 W V D C S ta n d a rd C a s e S iz e s

8104b

Contextual Info: Preliminary SPEC CMOS DRAM KM48V8004B, KM48V8104B 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily o f 8,3 88,60 8 x 8 bit Extended D ata O ut M ode C M O S DR AM s. Extended Data O ut M ode offers high speed random access of m em o ry cells w ith in the sam e row. R efresh cycle 4 K Ref. o r 8K Ref. , access tim e (-4, -5 o r -6), po w e r co n su m p tio n (N o rm a l or

Contextual Info: KM48V8004A, KM48V8104A CMOS DRAM 8M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily o f 8 ,3 8 8 .6 0 8 x 8 bit E x te n d e d D a ta O u t M o d e C M O S D R A M s . E x te n d e d D a ta O u t M o d e o ffe rs high s p e e d ra n d o m a c c e s s o f m e m o ry c e lls w ith in th e sa m e row . R e fre s h c y c le 4 K R e f. o r 8 K R ef. ,

EDO DRAM

Contextual Info: PRELIMINARY M IC B Q N Î H R AM U riMIVI d o d r Âm MT4LC16M4G3 MT4LC16M4H9 FEATURES • Single +3.3V +0.3V power supply • Industry-standard x4 pinout, timing, functions and packages • 12 row, 12 column addresses H9 or 13 row, 11 column addresses (G3)

Contextual Info: 4 MEG x 4 EDO DRAM MICRON TECHNOLOGY. INC. lì R A M L S r T M IV I MT4LC4M4E8, MT4C4M4E8 MT4LC4M4E9, MT4C4M4E9 FEATURES PIN ASSIGNMENT Top View • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art high-performance, low power CMOS

82c386

Abstract: 82C836 82C836B intel 80387sx LIM EMS 4.0 8088 motherboard schematics 82c710 Chips and Technologies microchannel timing 92H-System SCATsx
Contextual Info: 82C836 CHIPSet Single-Chip 386sx AT Data Sheet March 1993 P R E L I M I N A R Y  Copyright Notice Software Copyright  1993, Chips and Technologies, Inc. Manual Copyright  1993, Chips and Technologies, Inc. All Rights Reserved. Printed in U.S.A. Trademark Acknowledgment

Contextual Info: MICRON8 I 4’ 8 H R AM MT6LDT472A X , MT12LDT872A (X) Lsnm vi R fl IVI M EG x 72 NONBUFFERED DRAM DIMMs III For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View)

ATI Rage IIC

Contextual Info: INTEG R ATED T O SH IB A M O S D IG ITAL INTEG RATED CIRCUIT CIRCUIT TC51V16165 G / C F T - 60 T O S H IB A TECHNICAL DATA COPY SILICON G ATE C M O S TENTATIVE D A T A 1,048,576 W O R D x 16 BIT ED O HYPER PAGE D Y N A M IC R A M DESCRIPTION The TC51V16165CJ/CFT is EDO (hyper page) dynamic RAM organized 1,043,576 words by 16 bits.

Contextual Info: 4’8 M E Gx36 MICRON* I ECC-OPTIMIZED DRAM SIMMs TECHNOLOGY, INC- l" R A M U MT9D436 X r tM IV I M T18D836 x MODULE For the latest data sheet revisions, please referto the Micron Web site: www.micron.com/mi/msp/htnl/datosheet.htnl FEATURES PIN ASSIGNMENT Front View)

104N3S

Contextual Info: BSO104N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 9.7 mΩ ID 13 A • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM)

4lc8m8c2

Abstract: 4lc8m8 M/NS-10
Contextual Info: M IC R O N I TECHNOLOGY, 8MEGx 8 INC. E DRAM D O D R A l V l MT4LC8M8P4, MT4LC8M8C2 For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V pow er supply

Contextual Info: PRELIMINARY M I I C R EDODRAM O N TECHNOLOGY INC 8 H R AM UnMIÏI M E G x 8 MT4LC8M8P4 MT4LC8M8C2 FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing, functions and packages • 12 row, 11 column addresses C2 or 13 row, 10 column addresses (P4)

AMD OPTERON 6000

Abstract: AMD Opteron 4000 series Processor dell precision 360 32-bit x86 microprocessor with 2 GHz AMD Opteron 2000 dell PowerEdge a4800 AMD Opteron 2650 cpu Motherboard dell
Contextual Info: W H I T E P A P E R AMD Opteron Processor Benchmarking for Clustered Systems Doug O’flaherty and Michael Goddard AMD One AMD Place Sunnyvale, CA 94088 Page 1 AMD Opteron™ Processor Benchmarking for Clustered Systems July 15, 2003 W H I T E P A P E R