R 1004 TRANSISTOR Search Results

Contextual Info: KSR2004 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • B uilt in bias R esistor ^ = 4 7 X 1 2 , R2=47Ki2) • C om plem ent to KSR 1004 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

HCPL-3700 Application note 1004

Abstract: varistor xf 075 zener diode cross reference IC 7414 not gate with schmitt trigger working of ic 7414 MC6821 AN 1004 Threshold Sensing for Industrial Control Systems with the HCPL-3700 Interface Optocoupler 7414 NOT gate ic HCPL-3700 OPTOCOUPLER 3700
Contextual Info: t g | Sa c k a r S application NOTE 1004 Threshold Sensing For Industrial Control Systems With the HCPL-3700 Interface Optocoupler IN TR O D U C TIO N The use of electronic logic cirtuitry in most applications outside of a controlled environment very quickly brings the

samsung NAND memory

Contextual Info: SMFV008 SmartMedia Document Title 8M X 8 Bit Sm artM edia™ Card Revision H istory Revision No. H istory Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 10ms Max. —> 4ms(Max.) 2. Changed Valid Block N u m b e r: 1004(Min.) -> 1014(Min.)

Contextual Info: XÉñ 10-1500 MHZ LOW NOISE T0-8 CASCADABLE AMPLIFIER HEW LETT PACKARD HAMP-1004 HAMP-1004TXV T E C H N IC A L DATA A P R IL 1985 Features 12.96 10 .510 WIDE 1 dB BANDWIDTH 5-1650 MHz ' 12.44 ¡ 0 . 490 ) ' D IA . LOW NOISE FIGURE 4.0 dB at 1500 MHz ' 11.69 0 .460 ) ;

BU931 ST

Abstract: BU931P BU931 bu931 equivalent BU931T
Contextual Info: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 2 The devices are bipolar Darlington transistors

Contextual Info: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 High ruggedness electronic ignitions

Contextual Info: RN1001 ~RN1006 T O SH IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1001, RN1002, RN1003 RN 1004, RN1005, RN1006 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS U nit in mm 5.1 MAX. • W ith Built-in Bias Resistors

Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs P-CHANNEL VERTICAL D-MOSFETS ratinas typ number V DS max. V Ptot1) max. (mW) _ V QS(th) R DS(on) max. (mA) min. (V) max. (V) max.

NES 1004

Abstract: 74AC244 EVM285SPD CCM TEXAS TP2104N3 1SS226 CM500 EL7156CS TC285SPD-30 TN2106
Contextual Info: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-30 CCD IMAGE SENSOR SOCS092 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame

TX285SPD

Abstract: TX285SPD-31 NES 1004 31 CCM TEXAS 74AC244 CM500 EL7156CS TP2104 TX285 EL7156
Contextual Info: TM 1004 x 1002 PIXEL IMPACTRON TX285SPD-31 CCD IMAGE SENSOR SOCS094 – JANUARY2006 • • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame

TC285SPD-B0

Abstract: Peltier element 74AC244 CM500 EL7156CS TN2106 TP2104 ionization sensor
Contextual Info: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame

74AC244

Abstract: TC285SPD-B0 1SS193 CCM TEXAS CM500 EL7156CS TN2106 TP2104 TC285-B0 NES 1004
Contextual Info: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame

2132R

Abstract: HD6432138SW bc 107 equivalent TCL 21106 REJ09B0301-0400 Nippon capacitors
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

AY 5 4700

Abstract: DATASHEET 33 1004 counter HD64F2138ATF20 IR 2137 IC hd64f2138afa20 8086 microprocessor block diagrammed with direction bc 357 transistor pin diagram DAC ic 0800 pin diagram TL 188 TRANSISTOR PIN DIAGRAM HD6432138SW
Contextual Info: REJ09B0301-0400 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2138 Group, H8S/2134 Group,

FMA4

Contextual Info: K *7 > V 7s $ / T r a n s i s t o r s ROHM F CO LT» Ä 4 P FM A4 40E X fc?2 y t V ~ ? T D B 7020=^ DDDt3D2 7 ^ *3 -9 o Epitaxial Planar Dual M ini-M o ld PNP Silicon Transistor ^JfivH ill/D im ensions Unit:mm) 1) K / \ * 7 ^ - v T- 2) zm<n h 7 > '>'X £ <7)fêtëfr'* 3 -o T

Contextual Info: SIEMENS BCR 198W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 47kfl, R2 = 47kQ Ordering Code Pin Configuration WRs Q62702-C2283 1= B Package 2=E o Marking BCR 198W II CO

LT 745 S

Abstract: tunnel diode General Electric
Contextual Info: 1. T e s t R e s u lt s A. Life Test Results Table 1 shows the life test results of B Series C 2MOS IC. B Series is classified into SSI Family less than 100 transistors and MSI Family (More than transistisqrs) . T a b le 1 TYPE TEST ITEMS High Temp. DC Bias

f256c

Abstract: F245C F245B F 245C
Contextual Info: N - Channel Junction Field Effect Transistors M A X IM U M R A T IN G S T Y PE NO. CASE I dss Yfs Im A m m hos) Pd B ^ gss (mW ) (V) m in m ax m in m ax V GS(ofT) ciss crss NF (V) (P F ) (PF ) (dB) m in m ax m ax max max B F 244A T O -9 2 D A 300 30 2 6.5

2N2007

Abstract: 2N3401 2n2002 transistors 2n 945 2sc 1919 2N2337 2N2003 2N945 2N1917 2N2944
Contextual Info: small signal transistors 69 SILICON CHOPPER TRANSISTORS TO-18 TO-5 NUMBERS NUMBERS RATED BREAKDOWN VOLTAGES Vca I VCE I VES VEC OFS r ec(on) I Max. I. (Ohms) (rnA) Max. (mV) Is i(,uA) -1.5 -2.5 -1.0 -3.0 -10 -1.0 -2.S -1.5 -3.5 -2.0 -3.0 -1.0 -3.5 -2.0 -3.5

4242A

Abstract: TIP41-TIP42
Contextual Info: SGS-THOMSON RÆOM§miOT@KS TIP41 /41 A/41 B/41C TIP42/42A/42B/42C MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The TIP41, TIP41 A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package intended for use in medium

C1004

Abstract: 2SC1623-L6 2SC1623L6 1N4148 2N5551 2sc1623 l6
Contextual Info: Preliminary Specification RCL Semiconductors Ltd. Dual Flashing EL Lamp Driver IC_C1004 GENERAL DESCRIPTION C1004 is a series of 2 ELs driver with flashing which is designed in Poly Gate CMOS technology. It can work under 3V or 1.5V DC power supply. C1004 can support EL1 and EL2 output pins to control 2 ELs to

T1P41B

Abstract: 4242A tip41 TIP41 TIP42
Contextual Info: 7^2=1537 □ D S ^ S 4 CJ 3 • SGS-THOMSON LiCTliMO S ' 1 -'2 >2 > - \ TIP41 41 A/41 B/41C TIP42/42A/42B/42C S G S- THOMS ON 3DE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The TIP41, TIP41 A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedeo

transistor 355

Abstract: 1005 TRANSISTOR
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor PMBTA06 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max, 80 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • General purpose switching and amplification in e.g.

uc1002

Contextual Info: MP6001 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 INDUSTRIAL APPLICATIONS Unit in mm o HIGH POWER SWITCHING APPLICATIONS, o MOTOR CONTROL APPLICATIONS. FEATURES . Package with Heat Sink Isolated to Lead. . High Collector Power Dissipation.