QUAD NAND GATE EXTERNAL PULL UP Search Results

DM74S03

Abstract: DM74S03MX M14A
Contextual Info: Revised May 2000 DM74S03 Quad 2-Input NAND Gate with Open-Collector Outputs General Description Pull-Up Resistor Equations This device contains four independent gates each of which performs the logic NAND function. The open-collector outputs require external pull-up resistors for proper logical

DM74LS26

Abstract: DM74LS26M DM74LS26N M14A MS-001 N14A
Contextual Info: Revised March 2000 DM74LS26 Quad 2-Input NAND Gate with High Voltage Open-Collector Outputs General Description Pull-Up Resistor Equations This device contains four independent gates each of which performs the logic NAND function. The open-collector outputs require external pull-up resistors for proper logical

Contextual Info: DM74ALS03B Quad 2-Input NAND Gate with Open Collector Outputs Features General Description • Switching specifications at 50pF This device contains four independent gates, each of which performs the logic NAND function. The opencollector outputs require external pull-up resistors for

C1995

Abstract: DM74ALS DM74ALS03B DM74ALS03BM DM74ALS03BN M14A N14A
Contextual Info: DM74ALS03B Quad 2-Input NAND Gate with Open Collector Outputs General Description Features This device contains four independent gates each of which performs the logic NAND function The open-collector outputs require external pull-up resistors for proper logical operation

MC858

Abstract: MC858F MC958 MC958F XMC96B MDTL
Contextual Info: / QUAD 2-INPUT "NAND" POWER GATE MDTL MC930/830 series | MC958F • MC858F,P The M C958/M C858 is a quad NAND power gate with an o u tp u t transis­ tor capable of sinking more current than standard gate elements. It is use­ ful as a high fan-out gate w ith an external pull-up resistor , and as a line,

ls01

Contextual Info: AVG Semiconductors DDi Technical Data DV74LS01 DV74ALS01 QUAD 2-INPUT NAND GATE with Open Collector Outputs N Suffix Plastic DIP AVG-001 Case This device contains four indpendent 2-input NAND gates. Open collector outputs require external pull-up resistors for

DM74ALS03B

Abstract: DM74ALS03BM DM74ALS03BN M14A MS-001 N14A
Contextual Info: Revised February 2000 DM74ALS03B Quad 2-Input NAND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic NAND function. The open-collector outputs require external pull-up resistors for proper logical

DM74ALS

Abstract: DM74ALS03B DM74ALS03BM DM74ALS03BN M14A N14A dm74als03bm fairchild
Contextual Info: DM74ALS03B Quad 2-Input NAND Gate with Open Collector Outputs N3 IIL = total maximum input low current for all inputs tied to pull-up resistor General Description This device contains four independent gates, each of which performs the logic NAND function. The open-collector outputs require external pull-up resistors for proper logical operation.

DM74ALS01N

Contextual Info: National Semiconductor DM74ALS01 Quad 2-Input NAND Gate with Open-Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic NAND function. The open-coliector out­ puts require external pull-up resistors for proper logical op­

Contextual Info: 03B VWANational HA Semiconductor DM74ALS03B Quad 2-Input NAND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic NAND function. The open-collector out­ puts require external pull-up resistors for proper logical op­

Contextual Info: December 1989 Semiconductor DM74ALS03B Quad 2-Input NAND Gate with Open Collector Outputs General Description Features This device contains four independent gates, each of which performs the logic NAND function. The open-collector out­ puts require external pull-up resistors for proper logical op­

atmel 952

Abstract: atmel h 952 ATL35 vhdl code for flip-flop jk flip flop to d flip flop conversion RTL 204 605 vhdl code for D Flipflop dssb oak dsp AOI222
Contextual Info: Features • High Speed - 150 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 3.7 Million Used Gates and 976 Pins • System Level Integration Technology ™ ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and Lode™DSP Cores, 10T/100 Ethernet MAC, USB and PCI Cores,

8 BIT ALU design with vhdl code using structural

Abstract: ITE 8515 atmel h 952 vhdl code for watchdog timer of ATM VHDL MAC CHIP CODE real time application of D flip-flop atmel 708 vhdl code for 8 bit barrel shifter 4 BIT ALU design with vhdl code using structural ATL35
Contextual Info: Features * * * * * High Speed - 150 ps Gate Delay - 2 input NAND, FO=2 nominal Up to 3.7 Million Used Gates and 976 Pins System Level Integration Technology CORES: ARM7TDMI and AVA™ RISC Microcontrollers, OakDSP™ and Lode ™DSP Cores, 10T/100 Ethernet MAC, USB and PCI Cores,

real time application of D flip-flop

Abstract: vhdl code for watchdog timer of ATM atmel 144 0802B
Contextual Info: Features * * * * * High Speed -150 ps Gate Delay 2 input NAND, FO=2 nominal Up to 3.6 Million Used Gates and 1,024 Pins System Level Integration Technology ARM7TDMI and AVfl™ RISC Microcontrollers OakDSP™ and Lode™ DSP Cores 10T/100 Ethernet, USB and PCI Cores

vhdl code for 8-bit adder

Abstract: verilog code for DFT hard disk serial ATA Atmel 826 debussy ATL35 vhdl code for flip-flop 8 bit risc microprocessor using vhdl vhdl code cisc processor NOR flash controller vhdl code
Contextual Info: Features • • • • • Available in Gate Array or Embedded Array High-speed, 150 ps Gate Delay, 2-input NAND, FO = 2 nominal Up to 2.7 Million Used Gates and 976 Pins 0.35µ Geometry in up to Four-level Metal System-level Integration Technology – Cores: ARM7TDMI RISC Microprocessor; AVR RISC Microcontroller;

PO88

Abstract: ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5
Contextual Info: Features • High Speed - 170 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.6 Million Used Gates and 596 pads, with 3.3V, 3V, and 2.5V libraries • System Level Integration Technology Cores on request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:

full subtractor circuit nand gates

Abstract: 8 bit carry select adder verilog codes PLESSEY CLA low power and area efficient carry select adder v 32 bit barrel shifter vhdl advantages of master slave jk flip flop half adder 74 full subtractor circuit using nand gate 0-99 counter by using 4 dual jk flip flop 3 bit carry select adder verilog codes
Contextual Info: AUGUST 1992 2462 - 4.0 CLA70000 SERIES HIGH DENSITY CMOS GATE ARRAYS Supersedes March 1992 edition - version 3.1 Recent advances in CMOS processing technology and improvements in design architecture have led to the development of a new generation of array-based ASIC

AOI222

Abstract: AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter
Contextual Info: Features • High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries • System Level Integration Technology Cores on Request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:

full subtractor circuit using decoder

Abstract: full subtractor circuit using nor gates tdb 158 dp VHDL program 4-bit adder 8 bit carry select adder verilog codes full subtractor circuit using nand gate full adder circuit using nor gates full subtractor circuit using nand gates full subtractor circuit nand gates 0-99 counter by using 4 dual jk flip flop
Contextual Info: CLA70000 Series High Density CMOS Gate Arrays DS2462 Recent advances in CMOS processing technology and improvements in design architecture have led to the development of a new generation of array-based ASIC products with vastly improved gate integration densities. This

Transistor Equivalent list po55

Abstract: Structure of D flip-flop DFFSR tristate buffer sis 968 PO-44Z PRU11 AC/DC drive nec 78054 PO22 tristate buffer cmos
Contextual Info: Features • High Speed - 180 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.198 M Used Gates and 512 Pads with 3.3 V, 3V and 2.5V libraries when tested to space quality grades • Up to 1.6M Used Gates and 596 Pads with 3.3 V, 3V and 2.5V libraries when tested to

8 bit carry select adder verilog codes

Abstract: full subtractor circuit using decoder 3 bit carry select adder verilog codes tdb 158 dp gec plessey semiconductor full subtractor circuit using nor gates full adder circuit using nor gates mc2870 VHDL program 4-bit adder 8 bit subtractor
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MARCH 1992 2462 - 3.1 CLA70000 SERIES HIGH DENSITY CMOS GATE ARRAYS Supersedes January 1992 edition - version 2.1 Recent advances in CMOS processing technology and improvements in design architecture have led to the

full adder circuit using nor gates

Abstract: full subtractor circuit using nand gate full subtractor circuit using nor gates full subtractor circuit using decoder 8 bit carry select adder verilog codes half adder 74 full subtractor circuit nand gates 8 bit subtractor 3 bit carry select adder verilog codes full subtractor circuit using nand gates
Contextual Info: CLA70000 Series High Density CMOS Gate Arrays DS2462 Recent advances in CMOS processing technology and improvements in design architecture have led to the development of a new generation of array-based ASIC products with vastly improved gate integration densities. This

atmel 216

Abstract: ECL IC NAND CQFP 256 PIN actel Atmel 642 PO22 tri state ATL35 atmel 334 20PCI atmel h 952
Contextual Info: Features • High-speed - 150 ps Gate Delay - 2-input NAND, FO = 2 nominal • Up to 2.7 Million Used Gates and 976 Pins • System Level Integration Technology – Cores: ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and LodeDSPCores™, 10T/100 Ethernet MAC, USB and PCI Cores

tristate buffer

Abstract: smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E
Contextual Info: Features • High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal • Up to 1.198M Used Gates and 512 Pads with 3.3V, 3V and 2.5V Libraries when Tested to Space Quality Grades • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries when Tested to