Untitled
Abstract: No abstract text available
Text: PI6C3Q991, PI6C3Q993
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PI6C3Q991,
PI6C3Q993
PI6C3Q99X
PI6C3Q991:
32-pin
PI6C3Q993:
28-pin
200ps
250ps
PI6C3Q991J
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Untitled
Abstract: No abstract text available
Text: PI6C3Q991, PI6C3Q993
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PI6C3Q991,
PI6C3Q993
PI6C3Q99X
PI6C3Q991:
32-pin
PI6C3Q993:
28-pin
200ps
250ps
PI6C3Q991
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Untitled
Abstract: No abstract text available
Text: NCV53480 Low-Power OOK/FSK/ASK ISM Band Transceiver General Description The NCV53480 ASSP is a low power OOK/FSK/ASK transceiver designed for operation in the ISM band from 260 MHz to 470 MHz. It is intended for use in narrowband, low data rate applications in the
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NCV53480
NCV53480
NCV53480/D
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SHDSL gs3137
Abstract: gs3137 Gs2237-108 GS3137-08T gs2237 SHDSL GS2237 gs2237-108-001d gs2214-108-001D gs2216 GS3137-08-T
Text: June 25, 2002, Issue 2 Part Numbers G2216-108-041DF B2 SDSL 2B1Q G2214-108-041DF B2 (SDSL CAP) G2237-108-041DT B2 (SHDSL/HDSL2) G2237-108-041DT C1 (SHDSL/HDSL2) XDSL2TM SDSL, HDSL2, or SHDSL - ILD2 Single-Channel, Low Power, Programmable Transceiver with Integrated Framer and Line Drivers
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G2216-108-041DF
G2214-108-041DF
G2237-108-041DT
DO-009644-DS,
SHDSL gs3137
gs3137
Gs2237-108
GS3137-08T
gs2237
SHDSL GS2237
gs2237-108-001d
gs2214-108-001D
gs2216
GS3137-08-T
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qSO 28 package
Abstract: pulse generator impedance "50 ohm" ansi s3.25 LVB044 baseband router block diagram
Text: PI90LV044, PI90LVB044
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PI90LV044,
PI90LVB044
TIA/EIA-644-1995
325Mhz)
350mV
PI90LV044)
PI90LVB044)
PI90LV044Q
PI90LV044L
PI90LVB044Q
qSO 28 package
pulse generator impedance "50 ohm"
ansi s3.25
LVB044
baseband router block diagram
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28-pin
Abstract: No abstract text available
Text: PENDING APPROVAL PI90LV044, PI90LVB044
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PI90LV044,
PI90LVB044
TIA/EIA-644-1995
325Mhz)
350mV
PI90LV044)
PI90LVB044)
350I90LVB044
PI90LV044Q
PI90LV044L
28-pin
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N1LG
Abstract: No abstract text available
Text: 80C186EA/80C188EA, 80L186EA/80L188EA PACKAGE INFORMATION This section describes the pins, pinouts, and thermal characteristics for the 80C186EA in the Plastic Leaded Chip Carrier PLCC package, Shrink Quad Rat Pack (SQFP), and Quad Flat Pack (QFP) pack
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80C186EA/80C188EA,
80L186EA/80L188EA
A19/S6)
N1LG
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ad664
Abstract: No abstract text available
Text: Monolithic 12-Bit Quad DAC AD664 ANALOG DEVICES □ FEATURES Four Complete Voltage Output DACs Data Register Readback Feature "Reset to Zero" Override Multiplying Operation Double-Buffered Latches Surface Mount and DIP Packages MIL-STD-883 Compliant Versions Available
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12-Bit
AD664
MIL-STD-883
44-Pin
AD664
12-bit,
75LSB
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INTEL 1980
Abstract: intel iapx 88 architecture and instructions 8284A clock generator i8088 intel 8087 instruction set AFN-01820B 1QS01 iAPX 88 all register 8x80-Bit 8087
Text: ¡nur iAPX 86/20 iAPX 88/20 NUMERIC DATA PROCESSOR Support 8 Data Types: 8-, 16-, 32-, 64Bit Integers, 32-, 64-, 80-Bit Floating Point, and 18-Digit BCD Operands High Performance 2 Chip Numeric Data Processor Standard iAPX 86/10, 88/10 Instruction Set Pius Arithmetic, Trigonometrie
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64-Bit
80-Bit
18-Dlgit
8x80-Bit
iog10
AFN-01920B
INTEL 1980
intel iapx 88 architecture and instructions
8284A clock generator
i8088
intel 8087 instruction set
AFN-01820B
1QS01
iAPX 88 all register
8087
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tic 41c
Abstract: No abstract text available
Text: jjjm iM W ÆmSmmkjjjjjj jmSSm «HHH •!—mmmm DEVICES INCORPORATED FEATURES □ First-In/First-Out FIFO using Dual-Port Memory □ Write and Read Clocks can be synchronous or asynchronous □ □ □ □ Advanced CMOS Technology High Speed — to 15 ns Cycle Time
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IDT722xl
32-pin
L8C211/221/231/241
512/1K/2K/4K
L8C211,
L8C221,
L8C231,
L8C241
L8C211
L8C221
tic 41c
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Untitled
Abstract: No abstract text available
Text: Monolithic ANALOG DEVICES □ 12-Bit Quad DAC AD664 PIN CONFIGURATIONS FEATURES Four Complete Voltage Output DACs Data Register Readback Feature "Reset to Zero" Override Multiplying Operation Double-Buffered Latches Surface Mount and DIP Packages MIL-STD-883 Compliant Versions Available
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12-Bit
AD664
44-Pin
MIL-STD-883
AD664
12-bit,
D-28A
E-44A
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IC-8221
Abstract: UPD70208H IC-3659 NEC V50 hardware 209E IEU-770 70216H V40HLTM PD70208H pD70216HLP-16
Text: DATA SHEET MOS INTEGRATED CIRCUIT M P D 7 0 2 0 8 H , 7 0 2 1 6 H V40HL , V50HL™ 16/8, 16-BIT MICROPROCESSOR DESCRIPTION The iiPD70208H V40HL is a high-speed, low -pow er 16-/8-bit m icroprocessor based on the jiPD70208 (V40™) w ith 16-bit architecture, 8-bit data bus, and general-purpose peripheral functions.
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V40HLTM
V50HLTM
16-BIT
uPD70208H
V40HL)
16-/8-bit
uPD70208
V40TM)
/xPD70216H
IC-8221
IC-3659
NEC V50 hardware
209E
IEU-770
70216H
V40HLTM
PD70208H
pD70216HLP-16
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d70208l
Abstract: D70208GF-8-3B9 D70208GF-10-3B9 uPD70216 "pin compatible" d70208gf MPD70216 PD70208L nec V20 microcontroller PD70216GF PD70208
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿PD70208,70208 A , 70216.70216(A) V40 , V50™ 16/8, 16-BIT MICROPROCESSOR DESCRIPTION The ¿¡PD70208 (V40) is a 16/8-bit microprocessor of 16-bit architecture provided with an 8-bit data bus. The /¿PD70216 (V50) is a 16-bit microprocessor of 16-bit architecture provided with a 16-bit data bus.
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uPD70208
uPD70216
V40TM,
V50TM
16-BIT
PD70208
16/8-bit
d70208l
D70208GF-8-3B9
D70208GF-10-3B9
uPD70216 "pin compatible"
d70208gf
MPD70216
PD70208L
nec V20 microcontroller
PD70216GF
PD70208
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Untitled
Abstract: No abstract text available
Text: l p 13« PIMMMGT [PIF3EWEW in te l. 80L188EA8 16-BIT HIGH INTEGRATION EMBEDDED PROCESSOR • 3V Operation, Vcc = 2.7V-5.5V ■ Full Static Operation ■ True CMOS Inputs and Outputs Integrated Feature Set — Static 186 CPU Core — Power Save, Idle and Powerdown
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80L188EA8
16-BIT
80C188
80L188EA
68-lead
80-lead
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> baMTÔ2T 001002b TD7 M GFX38V9095 9 .0 —9.5G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX 38V 9095 is an internally impedance matched GaAs power FET especially designed for use in 9.0 ~ 9.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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001002b
GFX38V9095
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> bEMRflS'ì ooiaosa ? ô t M GFX38V9500 9.5~ 10.0GHz BAND 6W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FX38V 9500 is an internally impedance matched GaAs power FET especially designed fo r use in 9.5 ~ 10.0 GHz band amplifiers. The herm etically sealed metal-ceramic
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GFX38V9500
FX38V
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> QQ1ÖQEM 034 “ 1 1 . 7 - 12.2G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 5 V 1 7 2 2 is an internally impedance matched GaAs power F E T especially designed fo r use in 11.7 — 12.2 G H z band amplifiers. The herm etically sealed metal-ceramic
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SNW-EQ-608
Abstract: transistor d 1862
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES _ PMBF107 PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 • No secondary breakdown. 2 g
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SNW-EQ-608,
SNW-FQ-302A
SNW-FQ-302B.
PMBF107
DA763
SNW-EQ-608
transistor d 1862
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Untitled
Abstract: No abstract text available
Text: in te i 80L188EA-13, -8 16-BIT HIGH INTEGRATION EMBEDDED PROCESSOR • 3V O p e ra tio n , V c c = 2 .7 V -5 .5 V ■ F u ll S ta tic O p e ra tio n ■ T ru e C M O S In p u ts a n d O u tp u ts ■ Integrated Feature Set — Static 186 CPU Core — Power Save, Idle and Powerdown
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80L188EA-13,
16-BIT
80L188EA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER QaAs FET MICROWAVE SEMICONDUCTOR TIM7I 79-8SL TECHNICAL DATA FEATURES : • LOW IN T E P M O D U L A T IO N D IS T O R T IO N ■ HIGH EFFIC IENC Y qadd * 32 % at 7.1 8H2 to 7 . 1 GHz |M3 a - 4 5 dBc at Po * 28.5 dBm, S ingle C arrier Level
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79-8SL
2-11D1B)
TIII717MSL
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFX38V9500 9 .5 ~ 1 0 .Q G H z BAWD 6 W INTERN ALLY MATCHED GaAs FET DESCRIPTION The MGFX38V9500 is an internally impedance matched GaAs power FET especially designed for use in 9.5 — 10.0 GHz band amplifiers. The hermetically sealed metal-ceramic
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GFX38V9500
MGFX38V9500
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KD 2107
Abstract: driver circuit for irs 2110 C7172 PCS-60 STC transistors g135 arm 272432 1HT1 N80c186
Text: INTEL CORP UP/PRPHLS bflE ]> • HÖ2bl7S G13SÖ37 176 M I T L l in te l 80C186EA/80C188EA AND 80L186EA/80L188EA 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS ■ 80C186 Upgrade for Power Critical Applications ■ Fully Static Operation ■ True CMOS Inputs and Outputs
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80C186EA/80C188EA
80L186EA/80L188EA
16-BIT
80C186
80C186EA20/80C188EA20)
80C186EA13/80C188EA13)
80C186EA/80L186EA
KD 2107
driver circuit for irs 2110
C7172
PCS-60
STC transistors
g135 arm
272432
1HT1
N80c186
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Untitled
Abstract: No abstract text available
Text: bEHTBST □Dl601fi fi3D • MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFX35V0005 1 0 .0 — 10.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FX35V 0005 is an internally impedance matched GaAs power FET especially designed for use in 10.0 ~ 10.5
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Dl601f
GFX35V0005
FX35V
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 38V 6472 6 . 4 ~ 7.2GHz BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 8 V 6 4 7 2 is an internally im pedan ce-m atched GaAs power F E T especially designed fo r use in 6 . 4 - 7 . 2 G H z band amplifiers. The herm etically sealed metal-ceramic
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