QS RECTIFIER Search Results

Contextual Info: INTERNATIONAL RECTIFIER bSE D • 4055452 GD1MS22 ATI ■ INR H Ü _ IRC530 W Q. CO Q. E E < c0 < ca> D O C ‘cvö _ Q O ç ’S a _ a 10° 10 1 V qs, Drain-to-Source Voltage volts) DATA SHEETS Q 101 V qs, Drain-to-Source Voltage (volts)

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler

inverter LS600-4005

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler

Contextual Info: International S Rectifier PD 91314 IRF737LC preliminary HEXFET^ Power MOSFET • Reduced Gate Drive Requirement • Enhanced 30V V qs Rating • Reduced Ciss. Coss> C rss • Extrem ely High Frequency Operation • Repetitive Avalanche Rated Voss = 300V RDS on =

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler

LQS2V121MELZ25

Abstract: LQS2V151MELZ30 LQS2V181MELA25 LQS2V181MELZ30 capacitor 680 uF 400v inverter LS600-4005
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, 105°C High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area. Suited for rectifier circuit of voltage doubler

capacitor 2.2 uf 350v

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, wide Tempereture range, High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area.

capacitor 2.2 uf 350v

Abstract: capacitor 470 uF 400v LQSW6681MELC50
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, wide Tempereture range, High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area.

capacitor 470 uF 400v

Abstract: LQSW6681MELC50 LQS2V121MELZ25 LQS2V151MELZ30 LQS2V181MELA25 LQS2V181MELZ30
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS QS Snap-in Terminal type, wide Tempereture range, High speed charge-discharge. series Suited for high frequency regenerative voltage for AC servomotor, general inverter. Suited for equipment used at valtage fluctuating area.

diode IN457

Abstract: JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier
Contextual Info: MIL SPECS IC|0Q0D1SS 0 Q QS 2M Q B | / NOTICE OF VALIDATION INCH-POUND MIL-S-19500/193C ER NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459 Military specification MIL-S-19500/193C(ER), dated 15 September

FR152

Abstract: FR153 FR154 FR155 FR157 fr152 sep
Contextual Info: SEP ELECTRONIC CORP 24E D OOQDD1S 1 • ''J-QS ~ \ S ■ « SEP FR151 thru FR157,R15 SERIES 1.5A FAST RECOVERY RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes DO-15 FEATURES • • • • • Low High Low High Low forward voltage current capability

F 540 NS

Abstract: NSG2563 20A p MOSFET 30V 20A power p MOSFET T4 PN diode xm46
Contextual Info: NSG2563 NEW ENGLAND SEMICONDUCTOR POWER MOSFET IN HERMETIC ISOLATED TO-254Z PACKAGE 25 AMPERE N-Channel FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low R qs on DESCRIPTION This series of hermetically packaged products feature the latest advanced

qs865a

Abstract: QS862A cps6000 lineage power rectifier -48v QS863A QS861A cps6000 20A Rectifier QS865 QS850 CC109129730
Contextual Info: Data Sheet January 2009 CPS6000 QS Series Rectifiers 42 to 58 Vdc Output Features § 2U height § Vertical forced­air cooled with variable speed fans § Constant power Applications QS Series Rectifiers § Wireless networks

toray s10

Abstract: S105T01
Contextual Info: PREPARED BY: SPEC. No. DATE: •7ï .c&«mAnô' ED-98106 ¡umili APPROVED BY: DATE: ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION Qs/jP&cci^uiJee, fljw iL /f ,1^% REPRESEÎ OPTO-ELECTRONIC DÏ DEVICE SPECIFICATION FOR MODEL No. SOLID STATE RELAY

irf621

Abstract: irf620
Contextual Info: N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R qs ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: Back to FETs NSG2563 ^ IP NEW ENGLAND SEMICONDUCTOR POWER MOSFET IN HERMETIC ISOLATED TO-254Z PACKAGE 25 AMPERE N-Channel FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low R qs on DESCRIPTION This series of hermetically packaged products feature the latest advanced

Contextual Info: I«R Data sneet IN T E R N A T IO N A L R E C T IF IE R INTERNATIONAL RECTIFIER QS DE | 4SSS4SS DDD7741 7 | n o . ru-o.G96 T~ z. <T-2- o S30E SERIES 1600-1000 VOLTS RANGE 1050 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE HOCKEY PUK SCRs VOLTAGE RATINGS

s1bc

Abstract: S15C uu 10.5 120UL
Contextual Info: INTERNATIONAL RECTIFIER 1I O R 1i n t e r n a t io n a l " qs D eT| 4055455 D007SÖ5 fl | Data Sheet No. PD-3.118 r e c t if ie r S15C & S15CH SERIES 1200-600 VOLTS RANGE 140 AMP RMS, CENTER GATE PHASE CONTROL TYPE STUD MOUNTED SCRs VOLTAGE RATINGS VOLTAGE

Contextual Info: N-CHANNEL POWER MOSFETS IRFS840/841/842/843 FEATURES • • • • • • • TO-22OF Lower R qs o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g ge d polysilicon gate cell structure Lower input capacitance Extended safe operating area