qe08-200
Abstract: qe 08 200 ks philips qe 08/200 qe 200 amplificateur hf 7Z00 QE08/200 2X40 "2x6 w"
Text: PHILIPS QE 08/200 BEAMPOWER TETRODE for use as amplifier, oscillator, frequency multiplier or modulator in A.M., S.S.B. and ,F.M. transmitters TÉTRODE À FAISCEAUX pour utilisation comme amplificatrice, oscillatrice, multlplicatrlce de fréquence ou modulatrlce
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QE08/200
7Z00020
qe08-200
qe 08 200
ks philips
qe 08/200
qe 200
amplificateur hf
7Z00
QE08/200
2X40
"2x6 w"
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Untitled
Abstract: No abstract text available
Text: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E06
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Untitled
Abstract: No abstract text available
Text: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E06
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S3590-08
Abstract: S3590-09 PIN photodiode 420 nm
Text: PHOTODIODE Si PIN photodiode S3590-08/-09 Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)
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S3590-08/-09
S3590-08
S3590-09
SE-171
KPIN1052E07
S3590-08
S3590-09
PIN photodiode 420 nm
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scintillator
Abstract: S2744-08 S3588-08
Text: PHOTODIODE Si PIN photodiode S2744/S3588-08 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)
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S2744/S3588-08
S2744-08
S3588-08
SE-171
KPIN1049E01
scintillator
S2744-08
S3588-08
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PIN photodiode 420 nm
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S3590-08/-09 Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)
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S3590-08/-09
S3590-08
S3590-09
SE-171
KPIN1052E06
PIN photodiode 420 nm
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PDF
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S2744-08
Abstract: S2744-09 S3588-08 S3588-09
Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E05
S2744-08
S2744-09
S3588-08
S3588-09
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E02
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S2744-08
Abstract: S2744-09 S3588-08 S3588-09 PIN photodiode 420 nm
Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E04
S2744-08
S2744-09
S3588-08
S3588-09
PIN photodiode 420 nm
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S2744-08
Abstract: S2744-09 S3588-08 S3588-09
Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)
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Original
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E03
S2744-08
S2744-09
S3588-08
S3588-09
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
SE-171
KPIN1049E04
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PDF
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S3590-01
Abstract: S3590-08 S3590-05 scintillator PIN photodiode 420 nm
Text: PHOTODIODE Si PIN photodiode S3590-01/-05/-08 Large area sensors for scintillation detection Features Applications l Higher sensitivity and low dark current than conventional type l Sensitivity matching with BGO and CsI TI scintillators l High quantum efficiency: QE=85 % (λ=540 nm)
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S3590-01/-05/-08
S3590-01
S3590-05
S3590-08
SE-171
KPIN1052E01
S3590-01
S3590-08
S3590-05
scintillator
PIN photodiode 420 nm
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Untitled
Abstract: No abstract text available
Text: Si PINフォトダイオード S2744/S3588-08, -09 大面積Si PINフォトダイオード 特長 用途 BGOCsI TI シンチレータに適した感度 高量子効率 (未封止タイプ): QE=85 % (λ=540 nm) シンチレーション検出 低容量 TOFカウンタ
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S2744/S3588-08,
S2744-08
S2744-09
S3588-08
S3588-09
KPINA0109JA
KPINA0042JB
KPIN1049J01
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QE08/200H
Abstract: AM MODULATOR qe08-200 qe 08/200 qe 200 qe 08 200 Emetteur QE08 Philips SSB philips oszillator
Text: PHILIPS QE08/200H BEAMPOWER TETRODE for use as amplifier, oscillator, fre quency multiplier or modulator in A.M., S.S.B, and P.M. transmitters TETRODE À FAISCEAUX pour utilisation comme amplificatrice, osclllatrice, multiplicatrice de fréquence ou modulatrlce
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QE08/200H
AM MODULATOR
qe08-200
qe 08/200
qe 200
qe 08 200
Emetteur
QE08
Philips SSB
philips oszillator
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transistor smd qe
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION DATE: 08/11/2004 cosmo SMD LED : ELECTRONICS CORPORATION NO. 61L30007 KL-150UDX SHEET 1 OF 9 REV. 1 UNIT:MM TOLERANCE: ± 0.25 Part No. Emitting Color Material Lens Type KL-150UDX Super brightness orange AlGaInP Water Clear Iv IF=20mA
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61L30007
KL-150UDX
24hrs)
45min
30min)
transistor smd qe
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AN1001
Abstract: No abstract text available
Text: AN1001 APPLICATION NOTE Using ByteSafe SRAMs in Parity and Non-Parity Applications Introduction GSI's ByteSafe™ technology opens a new front in the battle for highly reliable data. Although parity bit storage has been around for as long as digital memory, learning
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AN1001
x18/x36
AN1001
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Untitled
Abstract: No abstract text available
Text: SN54LV164A, SN74LV164A 8ĆBIT PARALLELĆOUT SERIAL SHIFT REGISTERS SCLS403H − APRIL 1998 − REVISED APRIL 2005 D 2-V to 5.5-V VCC Operation D Max tpd of 10.5 ns at 5 V D Typical VOLP Output Ground Bounce 14 2 13 3 12 4 5 11 10 9 6 8 7 VCC QH QG QF QE
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SN54LV164A,
SN74LV164A
SCLS403H
000-V
A114-A)
A115-A)
SN54LV164A
SN74LV164A
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Untitled
Abstract: No abstract text available
Text: SN54F299, SN74F299 8ĆBIT UNIVERSAL SHIFT/STORAGE REGISTERS WITH 3ĆSTATE OUTPUTSą ą The SN54F299 is obsolete and no longer supplied. SDFS071B − MARCH 1987 − REVISED APRIL 2004 D Four Modes of Operation: D D D D D SN54F299 . . . J PACKAGE SN74F299 . . . DW, N, OR NS PACKAGE
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SN54F299
SN54F299,
SN74F299
SDFS071B
SN54F299
SN74F299
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Untitled
Abstract: No abstract text available
Text: SN54LV164A, SN74LV164A 8-BIT PARALLEL-OUT SERIAL SHIFT REGISTERS SCLS403D – APRIL 1998 – REVISED JANUARY 2001 D D D D SN54LV164A . . . J OR W PACKAGE SN74LV164A . . . D, DB, DGV, NS, OR PW PACKAGE TOP VIEW 2-V to 5.5-V VCC Operation Typical VOLP (Output Ground Bounce)
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SN54LV164A,
SN74LV164A
SCLS403D
000-V
A114-A)
A115-A)
SN54LV164A
SN74LV164A
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Untitled
Abstract: No abstract text available
Text: SN54LV595A, SN74LV595A 8ĆBIT SHIFT REGISTERS WITH 3ĆSTATE OUTPUT REGISTERS SCLS414N − APRIL 1998 − REVISED APRIL 2005 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC QA SER OE RCLK SRCLK SRCLR QH′ QC QD QE QF QG QH 15 2 3 14 4 13 5 12 6 11 7 10 8 9 QD QE
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SN54LV595A,
SN74LV595A
SCLS414N
000-V
A114-A)
A115-A)
SN54LV595A
SN74LV595A
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Untitled
Abstract: No abstract text available
Text: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4PC30UD
O-247AC
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PDF
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QS53806
Abstract: DRIVER16 LTC 433 16646AE PI3L500-AZFE PI5C162861B PI49FCT20802L PI49FCT20803L PI49FCT20803Q PI49FCT20807S
Text: Pericom Semiconductor Corp. • 3545 North First St. • San Jose, CA 95134 • USA PRODUCT DISCONTINUANCE NOTIFICATION PDN PDN Number: 07-0501 Issue Date: May 29, 2007 Product(s) Affected: See attached file listing all affected products Alternative Supply Sources: N/A
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PI5C6800CQE
PI5L100LE
PI5L100QE
PI5L100WE
PI5L102LE
PI5L200LE
PI5V330AWE
QS53806
DRIVER16
LTC 433
16646AE
PI3L500-AZFE
PI5C162861B
PI49FCT20802L
PI49FCT20803L
PI49FCT20803Q
PI49FCT20807S
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Untitled
Abstract: No abstract text available
Text: SN54AHCT594, SN74AHCT594 8-BIT SHIFT REGISTERS WITH OUTPUT REGISTERS SCLS417F – JUNE 1998 – REVISED NOVEMBER 2002 D D 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC QA SER RCLR RCLK SRCLK SRCLR QH′ SN54AHCT594 . . . FK PACKAGE TOP VIEW QC QB description/ordering information
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SN54AHCT594,
SN74AHCT594
SCLS417F
000-V
A114-A)
A115-A)
SN54AHCT594
SN74AHCT594
SN74AHCT594PW
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339d
Abstract: 8 - input data selector
Text: INCH-POUND MIL-M-38510/339D 18 February 2004_ SUPERSEDING MIL-M-38510/339C 2 September 1986 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY TTL, DATA SELECTORS/MULTIPLEXERS WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON Reactivated after 18 February 2004 and may be used for either new or existing design acquisition.
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MIL-M-38510/339D
MIL-M-38510/339C
MIL-M-38510/339D
339d
8 - input data selector
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