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AN 22022 Abstract: No abstract text available Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery	Original	PDF	SDT10S60 PG-TO220-2-2. Q67040S4643 D10S60 AN 22022
SDT10S60 Abstract: No abstract text available Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery	Original	PDF	SDT10S60 P-TO220-2-2. D10S60 Q67040S4643 SDT10S60
D10S60 Abstract: DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60 Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery	Original	PDF	SDT10S60 PG-TO220-2-2. D10S60 Q67040S4643 PG-TO-220-2-2 D10S60 DIODE 200A 600V schottky PG-TO-220-2-2 Schottky diode TO220 SDT10S60
D10S60 Abstract: pg-to220-2-2 Text: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery	Original	PDF	SDT10S60 PG-TO220-2-2. Q67040S4643 D10S60 D10S60 pg-to220-2-2