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    Q6270 Search Results

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    Q6270 Price and Stock

    ams OSRAM Group Q62700G0055

    ACTIVELY COOLED SIRILAS EVAL KIT
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    KEMET Corporation C44UOEQ6270F7SK

    CAP POLYPROP FILM CAN
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    DigiKey C44UOEQ6270F7SK Box 2
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    Newark C44UOEQ6270F7SK Bulk 2
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    KEMET Corporation C44UOGQ6270F7SK

    CAP POLYPROP FILM CAN
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    DigiKey C44UOGQ6270F7SK Box 54
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    Mouser Electronics C44UOGQ6270F7SK
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    Newark C44UOGQ6270F7SK Bulk 9
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    Richardson RFPD C44UOGQ6270F7SK 1
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    KEMET Corporation C4DEFPQ6270A8TK

    270 400V |Kemet C4DEFPQ6270A8TK
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    Newark C4DEFPQ6270A8TK Bulk 12
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    Siemens Q62702-F975

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    Bristol Electronics Q62702-F975 31,995
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    Q6270 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Q627002G0078 Siemens GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) Original PDF
    Q62701-F51 Siemens PNP GERMANIUM RF TRANSISTOR Scan PDF
    Q62701-F72 Siemens PNP GERMANIUM RF TRANSISTOR Scan PDF
    Q62701-F88 Siemens PNP GERMANIUM RHF TRANSISTOR Scan PDF
    Q62701-F92 Siemens PNP GERMANIUM UHF TRANSISTOR Scan PDF
    Q62701-P5029 OSRAM Silicon PIN Photodiode with Very Short Switching Time in SMR Package Original PDF
    Q62701-P5030 OSRAM Silicon PIN Photodiode with Very Short Switching Time in SMR Package Original PDF
    Q62702-A0042 Siemens Silicon Crossover Ring Quad Schottky Diode Original PDF
    Q62702-A0043 Siemens Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators) Original PDF
    Q62702-A0062 Siemens Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) Original PDF
    Q62702-A0960 Siemens Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) Original PDF
    Q62702-A1004 Siemens Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) Original PDF
    Q62702-A1006 Siemens Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) Original PDF
    Q62702-A1010 Siemens Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) Original PDF
    Q62702-A1017 Siemens Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) Original PDF
    Q62702-A1025 Siemens Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Original PDF
    Q62702-A1028 Siemens Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) Original PDF
    Q62702-A1030 Siemens Silicon Switching Diode Array (For high speed switching applications Common cathode) Original PDF
    Q62702-A1031 Siemens Silicon Switching Diode Array (For high speed switching applications Common anode) Original PDF
    Q62702-A1036 Siemens Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) Original PDF
    ...

    Q6270 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    us3845

    Abstract: TLE4942 Q62705-K0630 pga 180
    Text: Data Sheet Supplement Differential Two-Wire Hall Effect Sensor IC TLE 4942-2 TLE 4942-2 C For all parameters not specified in this document the TLE 4942 data sheet is valid. P-SSO-2-1 Type Marking Ordering Code Package TLE 4942-2 4202E4 Q62705-K0633 P-SSO-2-1


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    PDF 4202E4 Q62705-K0633 4942-2C 42C2E4 Q62705-K0630 4942-2C us3845 TLE4942 Q62705-K0630 pga 180

    Q62702-S637

    Abstract: Q62702-S638
    Text: SN 7000 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 D Pin 3 G Type VDS ID RDS(on) Package Marking SN 7000 60 V 0.25 A 5Ω TO-92 SN 7000 Type SN 7000 SN 7000 Ordering Code Q62702-S638


    Original
    PDF Q62702-S638 Q62702-S637 E6288 E6296 Q62702-S637 Q62702-S638

    bss84

    Abstract: BSS84 E6327 marking BSs sot23 siemens BSS84 siemens
    Text: SIEMENS BSS84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 G Type BSS84 Vos -50 V Type BSS84 BSS84 Ordering Code Q62702-S568 Q67000-S243 b -0.13 A WDS(on) 10Q Pin 3 S Package Marking


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    PDF BSS84 BSS84 OT-23 Q62702-S568 Q67000-S243 E6327 E6433 BSS84 E6327 marking BSs sot23 siemens BSS84 siemens

    marking 93A

    Abstract: transistor marking code 1325 b 11061
    Text: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 BFR 93A R2s Q62702-F1086 1= B ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF Q62702-F1086 OT-23 900MHz marking 93A transistor marking code 1325 b 11061

    07027

    Abstract: 1.0037
    Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • ¿r = 8GHz F =1.3dB at 900MHz Package BFP193W SOT-343 RCs Q62702-F1577 1= E 2=C 3=E CÛ !l ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF 900MHz BFP193W Q62702-F1577 OT-343 BFP193W 07027 1.0037

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF 900MHz Q62702-F1314 OT-23 BFR181

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BC P71M NPN Silicon AF Power Transistor Preliminary data • Drain switch for RF power amplifier stages • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage Q62702-C2597 LU II CO PCs O li BCP71M


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    PDF BCP71M SCT-595 Q62702-C2597 20Collector-base

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCP70M PNP Silicon AF Power Transistor Preliminary data • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage Package o II in h CO Q62702-C2596 h PBs IXI BCP 70M Pin Configuration CO Ordering Code


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    PDF BCP70M Q62702-C2596 SCT-595 300ns;

    sot marking code ZS

    Abstract: transistor bf 290
    Text: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration


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    PDF OT-23 Q62702-F1124 21el2 IS2l/S12l sot marking code ZS transistor bf 290

    ON Semiconductor marking 821

    Abstract: No abstract text available
    Text: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings


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    PDF 10ki2 10kS2) Q62702-C2385 OT-23 III11 ON Semiconductor marking 821

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF Q62702-F1316 OT-23 BFR183 900MHz

    Q62702-F938

    Abstract: IS21E K2112
    Text: SIEMENS BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA Q62702-F938 1=B O GEs LU II CM BFR 35AP CO II ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF Q62702-F938 OT-23 IS21e K2112

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN h HI CO Q62702-A3474 o s2G II CM SMBTA 56M Pin C onfiguration CO II Marking O rdering Code T— Type


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    PDF Q62702-A3474 SCT-595 300ns;

    BSS284

    Abstract: marking BSs sot23 siemens
    Text: SIEMENS BSS 284 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-1.6 V Pin 2 Pin 1 G Type Vbs BSS 284 -50 V Type BSS 284 Ordering Code Q62702-S299 b -0.13 A flbS(on} 100 Pin 3 D S Package Marking SOT-23


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    PDF OT-23 Q62702-S299 E6327 BSS284 marking BSs sot23 siemens

    xds pnp

    Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
    Text: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23


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    PDF 10kii) Q62702-C2383 OT-23 xds pnp Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs

    CT28

    Abstract: No abstract text available
    Text: SIEMENS BB 837 Silicon Tuning Diode Preliminary data • Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units • High capacitance ratio Type Marking Ordering Code Pin Configuration Package BB 837 M Q62702-B0904 1=C SOD-323


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    PDF Q62702-B0904 OD-323 Mar-27-1998 CT1/CT28 CT28

    15025

    Abstract: No abstract text available
    Text: SIEMENS Silicon Schottky Diodes BAT 15-. 5 R • Beam lead technology • Low dimension • High performance • Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-025 R 52 Q62702-A804


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    PDF Q62702-A804 Q62702-A809 Q62702-A812 Q62702-A806 EHA07009 15025

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BAT 14-. D Silicon Schottky Diodes • Beam lead technology • Low dimension • High performance • Medium barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 14-020 D - Q62702-D1259


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    PDF Q62702-D1259 Q62702-D1276 Q62702-D1268 Q62702-D1285 fiE35b05

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS BF 554 NPN Silicon RF Transistor • For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code tape and reel BF 554 CC Q62702-F1042 Pin Co nfigural ion 1 2 3 B E Package1) C SOT-23


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    PDF Q62702-F1042 OT-23 S35hDS fl235bDS

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BXY 42BA-7 Silicon PIN Diode • Fast switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code B XY 42BA-7 27 Q62702-X160 Pin Configuration * ° H<3-EHA07007 Package1 Cerec-X Maximum Ratings


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    PDF 42BA-7 Q62702-X160 3--------EHA07007 0Qbb740

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BXY 42BA-6 Silicon PIN Diode • Fast switching • Coax package * E SD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering C ode Pin Configuration Package* B X Y 42BA-6 - Q62702-X146 Í D ki o EHA07001


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    PDF 42BA-6 Q62702-X146 EHA07001 S23SbGS AB35LQ5 GDbb73fl

    BF970

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon RF Transistor BF 970 • For UHF mixer and oscillator stages Type Marking Ordering Code BF 970 - Q62702-F650 Pin Configuration 1 2 3 B C Package1* E T-plast Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Veto 35


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    PDF Q62702-F650 023SbOS BF970

    bf579

    Abstract: No abstract text available
    Text: SIEM EN S PNP Silicon RF Transistor BF 579 • For low-distortion, low-noise VHF/UHF amplifier and UHF oscillator applications in TV tuners • Typical collector current 10 mA Type Marking Ordering Code tape and reel BF 579 LJ Q62702-F971 Pin Co nfigural ion


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    PDF Q62702-F971 OT-23 0B3Sb05 B235b05 bf579

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Schottky Diodes • Beam lead technology • Low dimension • High performance • Medium barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 14-020 R - Q62702-D1260 BAT 14-050 R


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    PDF Q62702-D1260 Q62702-D1269 Q62702-D1277 Q62702-D1286 EHA07009 023Sb05