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    Q004 Search Results

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    Q004 Price and Stock

    Littelfuse Inc 0FLQ004.T

    FUSE CARTRIDGE 4A 500VAC/300VDC
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    DigiKey 0FLQ004.T Bulk 10 1
    • 1 $23.81
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    Mouser Electronics 0FLQ004.T
    • 1 $22.68
    • 10 $20.79
    • 100 $16.56
    • 1000 $14.74
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    Newark 0FLQ004.T Bulk 10
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    TTI 0FLQ004.T Bulk 10
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    • 100 $11.87
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    TME 0FLQ004.T 84 1
    • 1 $25.28
    • 10 $23.17
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    Ozdisan Elektronik 0FLQ004.T
    • 1 $58.05692
    • 10 $54.2588
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    Kyocera AVX Components KITSQ004

    CAP KIT CER 0.2PF-100PF 360PCS
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    Littelfuse Inc 0FLQ004.HXR

    FUSE GLASS 4A 500VAC 5AG
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    DigiKey 0FLQ004.HXR Bulk 100
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    Newark 0FLQ004.HXR Bulk 100
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    TTI 0FLQ004.HXR Bulk 100
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    Ozdisan Elektronik 0FLQ004.HXR
    • 1 $60.74957
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    • 100 $56.7753
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    Kyocera AVX Components NC20Q00474KBA

    THERM NTC 470KOHM 4300K 1206
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    DigiKey NC20Q00474KBA Reel 3,000
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    Mouser Electronics NC20Q00474KBA
    • 1 $0.35
    • 10 $0.305
    • 100 $0.237
    • 1000 $0.188
    • 10000 $0.154
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    Newark NC20Q00474KBA Reel 3,000
    • 1 $0.202
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    Avnet Abacus NC20Q00474KBA Reel 20 Weeks 3,000
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    onsemi NCV70522DQ004G

    IC MOTOR DRIVER BIPOLAR 36SSOP
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    Avnet Americas NCV70522DQ004G Tube 21 Weeks 3,680
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    Flip Electronics NCV70522DQ004G 76,500
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    Q004 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SQS840EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 40 RDS(on) () at VGS = 10 V 0.0166 RDS(on) () at VGS = 4.5 V 0.0219 ID (A) • AEC-Q101 qualified d


    Original
    PDF SQS840EN AEC-Q101 SQS840EN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for


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    PDF 023SbQS Q004312 60203-Y66 BCY66 QQ0M31Ö

    transistor d 1933

    Abstract: No abstract text available
    Text: 2SC D • ñE3SbQS Q0045CH b H S I E NPN Silicon RF Transistor G| SIEMENS AKTIENGESELLSCHAF : 0^509 -2 A BF 505 0 - BF 5 0 5 is an NPN silicon planar RF transistor in TO 9 2 plastic package 10 A 3 D IN 41868 . The transistor is particularly intended for use in V H F amplifiers in common emitter configuratin, VH F mixers and VHF/UHF oscillators.


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    PDF Q0045CH transistor d 1933

    SK3466

    Abstract: SK3559 SK3444 SK3441 SK3528 SK3710 SK3452 sk3444 transistors SK3467 SK3642
    Text: TH OM S O N / D I S T R I B U T O R I B IPO LAR TRANSISTORS 5ÖE D • = 1 0 ^ 0 7 3 Q004flPl 5T5 ■ TCSK com. Maximum Ratings K E Type Device Polarity & Material Breakdown Voltages Application 'complementary device type SK3441 Device Power Dissipata Collector


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    PDF SK3441 SK3440 SK3444 SK10272 SK3449 SK3450 SK3450 SK3449 SK34S2 AmT-040 SK3466 SK3559 SK3528 SK3710 SK3452 sk3444 transistors SK3467 SK3642

    BA5206BF

    Abstract: BA3304 BA5206 BA3404F BA340 64mw
    Text: ' t ' — 'T < IC /IC s for Audio Applications ' ROHM CO LTD B Â 5 2 MGE D 6 B BA5206BF Hi 7à2atn cì Q0045tì3 5 Q RHP1 3V-64mW x j l 77;1 //\° 7 -7 7> 7 ° 3V-64mW Dual Power Amplifier F T-77.2Ì • ii-JfiTfiÉS/'Dim ensions Unii :min BA5206BF(i,3V ;^(7) a . 7


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    PDF BA5206BF 520SBP V-64mW BA5206BFÂ BA5206BF 330/iF 01/iF BA3304 BA5206 BA3404F BA340 64mw

    Untitled

    Abstract: No abstract text available
    Text: / / / / New Prpduct 'j§ 8 4 3 0 • 8440series 2 row type 32 44 50 64 90 Inverse DIN, VA product l<3o’ Pin Receptacle 8 4 3 1 -X X X -iii B ± 0 .1(B±0.004) 2 -0 2 .8 ± j)' E ± 0 .l (E±0.004) 294-^0.8! q' (<60.031 +0.004 - 0 ) ± 2.54± 0.05 I2-0O.1IO^q004)


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    PDF 8440series T01233b

    SIEMENS THYRISTOR BRY 20

    Abstract: 7809A SIEMENS thyristor BRY 300 BRY20 SIEMENS FAST THYRISTOR
    Text: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga ) is electrically connected to the case. The BRY 20 is particularly


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    PDF fl23SbaS Q0047b3Jj BRY20 Q60217-Y20 100mA SIEMENS THYRISTOR BRY 20 7809A SIEMENS thyristor BRY 300 BRY20 SIEMENS FAST THYRISTOR

    80196 microcontroller pin diagram

    Abstract: No abstract text available
    Text: • 'CIRRUS LOGIC 213bb3T Q0047MI4 b^T * C I R CL-SH4600 Advance Product Bulletin FEATURES General ■ Automated PC XT/AT disk controller ■ Complete hardware automation of host-to-disk and disk-to-host transfers ■ Automatic update of PC/AT task file registers


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    PDF 213bb3T Q0047MI4 CL-SH4600 100-pin 80196 microcontroller pin diagram

    ER1001

    Abstract: ER1007
    Text: TAIWAN LITO N E L E C T R O N I C • HIE D LITE ? I SEMICO NDUCTO RS m flfl35bRS Q0041AD ■ TLIT ER1001 thru ER1007 F o v ^ VO LTA G E RANGE 50 to 1000 Volts C U R R EN T 1.0 Ampere FEATURES • • Diffused junction • Low leakage • Low forward voltage drop


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    PDF ER1001 ER1007 DO-41. MIL-STD-202, do-41 028X71} -300PS ER1007

    Untitled

    Abstract: No abstract text available
    Text: EX A R 3422618 CORP TI De J EXAR CORP 34E2ti]jö Q0047bM 91D 04764 XR-J100 Master-Chip Linear, bipolar NPN Transistors Chip Size: 80 x 75 mils Small Signal: 36 Medium: 2 Total Components: 188 Dual PNP Transistors: 12 Bonding Pads: 18 Max. Operating Voltage: 20V


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    PDF 34E2ti Q0047bM XR-J100 60kft: 450il: 900ft: 159kil XR-J100 XR-1488/1489A XR-1488

    Untitled

    Abstract: No abstract text available
    Text: HS-ODC-H24-Q004 HS-DDC-H21 -0003 M&-DDC-H24-0ÖÖ4 HS-0DC-H21-0003


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    PDF

    ECG987

    Abstract: ECG177 ECG387 QGG4514 aish activa 150
    Text: PHILIPS E C G INC 17E bbSBTEô Q004507 S • ECG987 Quad Op Amplifier Sem iconductors Features • Compatible with all forms of logic • Power drain suitable for battery operation • Internally frequency compensated for unity gain • Large DC voltage gain — 100 dB


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    PDF ECG987 15Vdc ECG387 QGG4514 ECG177 ECG987 ECG177 ECG387 aish activa 150

    ECG1111

    Abstract: ODD4037 tv schematic diagram PHILIPS CI 7405 schematic diagram of 24 DC power supply
    Text: 17E Q PHILIPS E C G INC • 1^53*126 Q004D3t. 3 ECG1111 AUDIO AM PLIFIER semiconductors SCHEMATIC DIAGRAM CONNECTION DIAGRAM top view -?vs • POWER 4 W (24 V - 1611) • s e L jM j e n t e r i n g BIAS • LOW QUIESCENT OUTPUT CURRENT • NO CRO SS OVER DISTORTION


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    PDF ECG1111 T-74-05-01 ECG1111 14-lead ODD4037 tv schematic diagram PHILIPS CI 7405 schematic diagram of 24 DC power supply

    A751

    Abstract: DIN 41872 BU205
    Text: 5SC D • fl23SbOS Q004Ô3Ô 3 ■ SIE6 r - 3 3- o 7 NPN Silicon Power Transistor BU 205 O' SIEMENS A K T I E N G E S E L L S C H A F 34838 BU 205 is a triple diffused silicon NPN power switching transistor in a TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength. It is


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    PDF fl23SbOS 68000-A751 C--12 A751 DIN 41872 BU205

    bfw 106 c

    Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
    Text: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for


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    PDF fi235bQ5 Q0047ES Q62702-F319 23SbOS 00Q4727 BFW16 bfw 106 c Q62702-F319 transistor BFW 10 bfw16a

    9606

    Abstract: 9719
    Text: 2ôl2b72 Q0047b5 5b2 2mm X 4mm Discrete LED Dîalîght Standard Efficiency Tinted 521-9606, -9607, -9658, -9719 a 93 I.JS7] t 2.54 J [.100 PART NO. LED COLOR 521-9606 521-9607 521-9658 521-9719 G reen Diffused Yellow Diffused Red Diffused Blue C lear ._


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    PDF l2b72 Q0047b5 From50 From25Â MIL-STD-202E, 100mA 9606 9719

    Untitled

    Abstract: No abstract text available
    Text: • Receptacle 3 3 'SOtdfeiRsy'fyp C L705-0002-5 HFD I-2R-B A A C L705-0003-8 H FDI-2R-B(B) B CL705-Q004-0 H FDI-2R-B(M ) M C L 7 0 5 -0005-3 HFD I-2R-B(S) S ■ Connectors with Cable Attached Product N um ber Connector Moontmg End H F D I-F P 1 -F 3 B W -L


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    PDF L705-0002-5 L705-0003-8 CL705-Q004-0 I-50/125 GI-62 GI-50/125

    ECG1222

    Abstract: 68011
    Text: P H I L I P S E C G INC LbS31Sa 17E Q00472Ô T T -74-Q 5-01 EC G 1222 AF POW ER AM PLIFIER Se m ¡condii et òr s 24ft" 8.23 • LOW N O IS E CHARACTERISTIC • EXCELLENT RIPPLE REJECTIO N 141312s ìi K _o t o ftfn i fni il y In ii-»i-in EW 709" (16) .989"


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    PDF LbS31Sa Q00472Ô -74-Q ECG1222 ECG1222 68011

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO LTD t 40E 7 Ô S Û cl cn D Q004M51 BA4230AF I C / I C s for Audio Applications < 7 ESRHM ~7z 7 7 ~ 0 S- 0 ~ 7 1.5V F M /A M -IF y X x A I C 1.5V F M /A M -IF Sytem IC BA4230AF i, 1.5V-fey h f flt C & fS U fc F M / A M -lF y X x M C T 't o 18 17 16 15 14 13 12 11 10


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    PDF Q004M51 BA4230AF BA4230AF

    BRY20

    Abstract: SIEMENS THYRISTOR SIEMENS THYRISTOR BRY 20 Q60217-Y20 200 hn PNPN SIEMENS FAST THYRISTOR
    Text: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga) is electrically connected to the case. The BRY 20 is particularly


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    PDF 000H7b3 BRY20 Q60217-Y20 BRY20 SIEMENS THYRISTOR SIEMENS THYRISTOR BRY 20 Q60217-Y20 200 hn PNPN SIEMENS FAST THYRISTOR

    Q68000-A751

    Abstract: TO115 BU205
    Text: 5SC D • fl23SbOS Q004Ô3Ô 3 ■ SIE6 r - 3 3- o 7 NPN Silicon Power Transistor SIEMENS BU 205 A K T I E N G E S E L L S C H A F 34838 BU 205 is a triple diffused silicon NPN power switching transistor in a TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength. It is


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    PDF fl23SbOS AKTIENGESELLSCHAFD4838 Q68000-A751 Q68000-A751 TO115 BU205

    HY5116100B

    Abstract: No abstract text available
    Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5116100B TheHY5116100B 1AD41-00-MAY9S 4b750Ã 0GG435b HY5116100BJ HY5116100BSLJ

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 M 4 6 4 0 C IB M 1 1 M 4 6 4 0 C B 4M X 64 DRAM MODULE • Au contacts • Optimized for byte-write non-parity applications Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 4Mx64 Fast Page Mode DIMM


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    PDF 4Mx64 110ns 130ns 03H7156

    IG8T

    Abstract: WE VQE 11 E Z4020 FUJI ELECTRIC CO.,LTD
    Text: Ratings and characteristics of Fuji IGBT 1 IVI B M 5 1 1. Out Iine Drawing 6 2. Equivalent circuit C :Co Ilector r.ONNFCTION © CATE © COLLECTOR © EMITTER 3 @ < > 3. Absolute maximum ratings C Tc=25°C Symbo1s 1terns Ratings Units Col lector-Einitter Voltage


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    PDF H04-004-03 0QDM54S 000MSSS H04-004-03 IG8T WE VQE 11 E Z4020 FUJI ELECTRIC CO.,LTD