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    MG150Q2YS11

    Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG150Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: tf = 1 .O^s Max. = 0.5ns (Max.) • Low saturation:


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    MG150Q2YS11 110IBA PW03910796 MG150Q2YS11 PDF