Untitled
Abstract: No abstract text available
Text: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 400 V VEBO 10 V 5(Pulse10) A IC Conditions Ratings Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30
|
Original
|
2SC4073
Pulse10)
O220F)
100max
400min
10typ
30typ
|
PDF
|
300V regulator
Abstract: 2SC5271 FM20
Text: 2SC5271 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 200 V IEBO VEBO 7 V V BR CEO 5(Pulse10) A hFE1 IB 2 A hFE2 VCE=2V, IC=1mA 15min PC 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A 1.0max Tj 150 °C VBE(sat) IC=2.5A, IB=0.5A 1.5max V –55 to +150
|
Original
|
2SC5271
Pulse10)
10typ
45typ
O220F)
15min
100max
200min
300V regulator
2SC5271
FM20
|
PDF
|
2SC4518
Abstract: 2SC4518A FM20
Text: 2SC4518/4518A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Conditions V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEBO 7 V V(BR)CEO 5(Pulse10) A hFE
|
Original
|
2SC4518/4518A
100max
O220F)
2SC4518
2SC4518A
550min
Pulse10)
50typ
2SC4518A
FM20
|
PDF
|
2SD2141
Abstract: 2SD2141 equivalent FM20 DMS-10
Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA
|
Original
|
2SD2141
Pulse10)
10max
20max
1500min
20typ
95typ
O220F)
150x150x2
100x100x2
2SD2141
2SD2141 equivalent
FM20
DMS-10
|
PDF
|
2SD2141 equivalent
Abstract: 2SD2141 FM20 DMS-10
Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA
|
Original
|
2SD2141
Pulse10)
10max
20max
1500min
20typ
95typ
O220F)
120mA
2SD2141 equivalent
2SD2141
FM20
DMS-10
|
PDF
|
2SC3679
Abstract: No abstract text available
Text: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor 5(Pulse10) A µA 800min V hFE VCE=4V, IC=2A 10 to 30 19.9±0.3 IC VEB=7V IC=10mA 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A 1.2max
|
Original
|
2SC3679
Pulse10)
100max
800min
75typ
700mA
MT-100
2SC3679
|
PDF
|
2SC4073
Abstract: FM20 SE-05
Text: 2SC4073 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor V ICBO VCEO 400 V VEBO 10 V 5(Pulse10) A IC Unit VCB=500V 100max µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=2A 10 to 30 IB 2
|
Original
|
2SC4073
Pulse10)
100max
400min
10typ
30typ
O220F)
2SC4073
FM20
SE-05
|
PDF
|
2SC5287
Abstract: transistor 2SC5287 DSA0016511
Text: 2SC5287 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25
|
Original
|
2SC5287
MT-100
100max
Pulse10)
550min
50typ
2SC5287
transistor 2SC5287
DSA0016511
|
PDF
|
2SC4300
Abstract: No abstract text available
Text: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A
|
Original
|
2SC4300
100max
800min
Pulse10)
75typ
FM100
2SC4300
|
PDF
|
2SD2045
Abstract: No abstract text available
Text: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max
|
Original
|
2SD2045
10max
120min
Pulse10)
2000min
50typ
70typ
2SD2045
|
PDF
|
2SC5130
Abstract: FM20
Text: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor Ratings Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2
|
Original
|
2SC5130
100max
10max
400min
Pulse10)
20typ
30typ
O220F)
2SC5130
FM20
|
PDF
|
2SD1769
Abstract: No abstract text available
Text: 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V BR CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C)
|
Original
|
2SD1769
MT-25
10max
20max
Pulse10)
100typ
2SD1769
|
PDF
|
2SB1258
Abstract: 2SD1785 FM20 IE1A
Text: 2SD1785 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1258 VCEO 120 V IEBO VEBO 6 V V(BR)CEO 6(Pulse10) A hFE IC Symbol Conditions Unit VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min VCE=2V, IC=3A 2000min V 1 A VCE(sat) PC 30(Tc=25°C)
|
Original
|
2SD1785
2SB1258)
Pulse10)
10max
120min
2000min
100typ
70typ
O220F)
2SB1258
2SD1785
FM20
IE1A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OM-CP-PULSE101 Counter/Totalizer/ Event Datalogger Part of the NOMAD Family OM-CP-PULSE101 199 $ Basic Unit Lifetime MADE IN USA ߜ Programmable Engineering Units ߜ Programmable Scale Factor/Offset Value ߜ Memory: 21,845 Readings ߜ Memory Wrap Around
|
Original
|
OM-CP-PULSE101
OM-CP-PULSE101
RS-232C
95/98/NT/2000/XP
36mmH
56mmW
16mmD
|
PDF
|
|
|
2SC3679
Abstract: No abstract text available
Text: 2SC3679 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 100(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A
|
Original
|
2SC3679
Pulse10)
100max
800min
75typ
MT-100
2SC3679
|
PDF
|
2SC4300
Abstract: No abstract text available
Text: 2SC4300 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 5(Pulse10) A hFE VCE=4V, IC=2A 10 to 30 IB 2.5 A VCE(sat) IC=2A, IB=0.4A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=2A, IB=0.4A
|
Original
|
2SC4300
100max
800min
Pulse10)
75typ
700mA
FM100
2SC4300
|
PDF
|
2SD1769
Abstract: No abstract text available
Text: 2SD1769 Silicon NPN Triple Diffused Planar Transistor Unit Conditions 120 V ICBO VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 20max mA 6 V V BR CEO 6(Pulse10) A hFE IC=10mA 120min VCE=2V, IC=3A 2000min 10.2±0.2 V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C)
|
Original
|
2SD1769
MT-25
10max
20max
Pulse10)
100typ
2SD1769
|
PDF
|
2SC5287
Abstract: No abstract text available
Text: 2SC5287 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25
|
Original
|
2SC5287
MT-100
100max
Pulse10)
550min
50typ
2SC5287
|
PDF
|
2SD2045
Abstract: No abstract text available
Text: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max
|
Original
|
2SD2045
10max
120min
Pulse10)
2000min
50typ
70typ
2SD2045
|
PDF
|
2SC5130
Abstract: FM20
Text: 2SC5130 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 2SC5130 Unit VCB=500V 100max µA VEB=10V 10max µA IC=25mA 400min ICBO VCEO 400 V IEBO VEBO 10 V V(BR)CEO 5(Pulse10) A hFE VCE=4V, IC=1.5A 10 to 30 10.1±0.2
|
Original
|
2SC5130
100max
10max
400min
Pulse10)
20typ
30typ
O220F)
2SC5130
FM20
|
PDF
|
2SC5271
Abstract: 300V regulator FM20
Text: 2SC5271 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 7 V V BR CEO 5(Pulse10) A hFE1 IC VCB=300V 100max µA VEB=7V 100max µA IC=10mA 200min V VCE=2V, IC=2.5A 10 to 30 IB 2 A hFE2 VCE=2V, IC=1mA 15min PC 30(Tc=25°C) W VCE(sat) IC=2.5A, IB=0.5A
|
Original
|
2SC5271
Pulse10)
100max
200min
O220F)
15min
10typ
45typ
2SC5271
300V regulator
FM20
|
PDF
|
transistor chn 943
Abstract: CHN 943 89/transistor chn 943 BR17
Text: FM0+ Family 32-BIT MICROCONTROLLER Timer Part PERIPHERAL MANUAL For the information for microcontroller supports, see the following web site. http://www.spansion.com/support/microcontrollers/ Publication Number S6E1A1_MN710-00002 CONFIDENTIAL Revision 1.0
|
Original
|
32-BIT
MN710-00002
MN710-00002-1v0-E,
transistor chn 943
CHN 943
89/transistor chn 943
BR17
|
PDF
|
STW6N95K5
Abstract: STP6N95K5 6N95K5 STD6N95K5 STF6N95K5 6N95K
Text: STD6N95K5, STF6N95K5 STP6N95K5, STW6N95K5 N-channel 950 V, 1 Ω, 9 A TO-220, TO-220FP, TO-247, DPAK Zener-protected SuperMESH5 Power MOSFET Features Type VDSS RDS on max. STD6N95K5 STF6N95K5 STP6N95K5 950 V < 1.25 Ω STW6N95K5 ID PW 9A 90 W 9A (1) 9A
|
Original
|
STD6N95K5,
STF6N95K5
STP6N95K5,
STW6N95K5
O-220,
O-220FP,
O-247,
STP6N95K5
STW6N95K5
STP6N95K5
6N95K5
STD6N95K5
STF6N95K5
6N95K
|
PDF
|
2SC4662
Abstract: FM20
Text: 2SC4662 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A
|
Original
|
2SC4662
100max
400min
20typ
30typ
Pulse10)
O220F)
2SC4662
FM20
|
PDF
|
