PU10640EJ01V0DS Search Results
PU10640EJ01V0DS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NEC ROHS COMPLIANT
Abstract: NEC PART NUMBER MARKING NESG3032M14 NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A
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NESG3033M14 NESG3032M14. NESG3033M14-A NEC ROHS COMPLIANT NEC PART NUMBER MARKING NESG3032M14 NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A | |
1208 markingContextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz |
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NESG3033M14 NESG3032M14. NESG3033M14 NESG3033M14-A PU10640EJ01V0DS 1208 marking | |
NESG3033M14Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3033M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz |
Original |
NESG3033M14 NESG3032M14. NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M14-T3-A PU10640EJ01V0DS |