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    PU10542EJ02V0DS Search Results

    PU10542EJ02V0DS Datasheets Context Search

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    ldmos nec

    Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


    Original     		NE55410GR NE55410GR ldmos nec PDF

    ne554

    Abstract: NE55410GR NE55410GR-T3-AZ TL12 TL13 TL15
    Contextual Info: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


    Original     		NE55410GR NE55410GR ne554 NE55410GR-T3-AZ TL12 TL13 TL15 PDF

    Contextual Info: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different


    Original     		NE55410GR NE55410GR PU10542EJ02V0DS IR260 WS260 HS350 PDF