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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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transistor marking T1k ghz
Abstract: NESG3031M05-A NESG3031M05 3 w RF POWER TRANSISTOR NPN 5.8 ghz NESG3031M05-T1-A
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
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NESG3031M05
NESG3031M05
NESG3031M05-A
PU10414EJ04V0DS
transistor marking T1k ghz
3 w RF POWER TRANSISTOR NPN 5.8 ghz
NESG3031M05-T1-A
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NESG3031M05
Abstract: NESG3031M05-A NESG3031M05-T1 MARKING T1K
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Original
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PDF
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NESG3031M05-T1-A
Abstract: NESG3031M05
Contextual Info: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification
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Original
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NESG3031M05
NESG3031M05
NESG3031M05-T1-A
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PDF
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NESG3031M05-T1
Abstract: transistor marking T1k ghz NESG3031M05 NESG3031M05-A
Contextual Info: NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz
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Original
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NESG3031M05
NESG3031M05-T1
transistor marking T1k ghz
NESG3031M05
NESG3031M05-A
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PDF
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