2SC2570A
Abstract: marking PA33 2SC2570A-T PA33
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC2570A NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz
|
Original
|
2SC2570A
2SC2570A
2SC2570A-T
PU10207EJ01V0DS
marking PA33
2SC2570A-T
PA33
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PU10207EJ01V0DS
2SC2570A
|
PDF
|
2SC2570A
Abstract: marking PA33
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PU10207EJ01V0DS
2SC2570A
2SC2570A
marking PA33
|
PDF
|