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Catalog Datasheet	MFG & Type	PDF	Document Tags
2.45 Ghz power amplifier 45 dbm Abstract: J842 2.45 Ghz power amplifier 30 db Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our	Original	PDF	NE552R479A NE552R479A HS350-P3 WS260 VP215 IR260 PU10124EJ03V0DS 2.45 Ghz power amplifier 45 dbm J842 2.45 Ghz power amplifier 30 db
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
NE552R479A-T1A Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our	Original	PDF	NE552R479A NE552R479A NE552R479A-T1A VP215 GSM1900 NE552R479A-T1 ldmos nec
GSM1900 Abstract: NE552R479A NE552R479A-T1 NE552R479A-T1A VP215 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF