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    PTIGBT 600V 10A Search Results

    PTIGBT 600V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    PTIGBT 600V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Eupec Power Semiconductors 600v bsm

    Abstract: BSM300GB60DN2 eupec igbt BSM 100 gb Eupec BSM siemens igbt 200 A WELDING INVERTER DESIGN BY IGBT
    Text: A New Generation of 600V IGBT-Modules Dipl.-Ing. Jürgen Göttert, eupec GmbH & Co KG, Warstein Dipl.-Ing. Andreas Karl, eupec GmbH & Co KG, Warstein Dipl.-Ing. Thomas Laska, SIEMENS, München Dr. Ing. Anton Mauder, SIEMENS, München Dipl.-Ing. Wolfgang Scholz, SIEMENS, München


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    BSM20GP60

    Abstract: BSM10GD60DL BSM15GD BSM150GB60DN2 BSM10GP60 BSM15GP60 BSM30GP60 BSM50GD60DN2 BSM150GD60DN2 BSM400GB60DN2
    Text: European Power Semiconducctor and Electronics Company GmbH + Co. KG 600V IGBT modules reach new levels of efficiency for power electronics applications. By Andreas Karl, 1998 Existing and newly evolving markets and applications for power electronics are challenging electronics manufacturers


    Original     		BSM10GP60 BSM10GD60DL BSM15GP60 BSM15GD60DL BSM20GP60 BSM20GD60DL BSM30GP60 BSM30GD60DL BSM50GD60DL BSM75GD60DL BSM20GP60 BSM10GD60DL BSM15GD BSM150GB60DN2 BSM10GP60 BSM15GP60 BSM30GP60 BSM50GD60DN2 BSM150GD60DN2 BSM400GB60DN2 PDF

    IGBT cross reference

    Abstract: AN9007 diode rectifier ebr IGBT SCHEMATIC IGBT tail time AN-9007 PP339 IGBT 2000 failure analysis IGBT IGBT failure
    Text: July, 2000 AN9007 High Performance 1200V PT IGBT with Improved Short-Circuit Immunity Chongman Yun, Sooseong Kim, Youngdae Kwon and Taehoon Kim Fairchild Semiconductor 82-3 Dodang-Dong, Wonmi-Ku, Buchon, Kyunggi-Do, KOREA Phone +82-32-680- 1325, Fax)+82-32-680- 1823, E-mail)cmyun@Fairchildsemi.co.kr


    Original     		AN9007 IGBT cross reference AN9007 diode rectifier ebr IGBT SCHEMATIC IGBT tail time AN-9007 PP339 IGBT 2000 failure analysis IGBT IGBT failure PDF

    Wacker Silicones p12

    Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note
    Text: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available


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    P-Channel IGBT

    Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure
    Text: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .


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