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MACOM PTFB093608FV-V3-R0 RF MOSFET LDMOS 28V H-34275G-6
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DigiKey	PTFB093608FV-V3-R0					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG PTFB093608FVV2XWSA1 RF MOSFET LDMOS
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DigiKey	PTFB093608FVV2XWSA1	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG PTFB093608FVV2R250XTMA1 RF MOSFET LDMOS
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DigiKey	PTFB093608FVV2R250XTMA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

PTFB093608FV Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTFB093608FVV2R250XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS		Original	PDF
PTFB093608FVV2S250XTMA1		Infineon Technologies	IC FET RF LDMOS H-362620-2		Original	PDF
PTFB093608FVV2XWSA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS		Original	PDF
PTFB093608FV-V3-R0		Wolfspeed	FET RF 2CH 65V 960MHZ H-37275G-6		Original	PDF
PTFB093608FVV3R0XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 2CH 65V 960MHZ H-37275G-6		Original	PDF
PTFB093608FV-V3-R2		Wolfspeed	FET RF 2CH 65V 960MHZ H-37275G-6		Original	PDF
PTFB093608FVV3R2XTMA1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF 2CH 65V 960MHZ H-37275G-6		Original	PDF

PTFB093608FV Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TL145 Abstract: TL245 transistor c111 C216 TL152 Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PDF	PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152
PTFB093608 Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145 Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PDF	PTFB093608FV PTFB093608FV H-37275-6/2 PTFB093608 tl2272 ptfb09360 TL258 TL103 application note tl131 TRANSISTOR c104 TL249 TL145
TL250 Abstract: TL239 Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,	Original	PDF	PTFB093608FV PTFB093608FV H-34275G-6/2 TL250 TL239
Untitled Abstract: No abstract text available Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power ampliier applications in the 920 to 960 MHz frequency band. Features include input and output matching,	Original	PDF	PTFB093608FV PTFB093608FV H-34275G-6/2
PTFB090901EA Abstract: No abstract text available Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB	Original	PDF	PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA