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    PTFA181001E Search Results

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    PTFA181001E Price and Stock

    Infineon Technologies AG PTFA181001EV4XWSA1

    RF MOSFET LDMOS 28V H-36248-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA181001EV4XWSA1 Tray 50
    • 1 -
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    • 100 $78.0878
    • 1000 $78.0878
    • 10000 $78.0878
    		Buy Now

    Infineon Technologies AG PTFA181001E-V4-T500

    RF MOSFET LDMOS 28V H-36248-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA181001E-V4-T500 Reel
    • 1 -
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    Infineon Technologies AG PTFA181001EV4R250XTMA1

    RF MOSFET LDMOS 28V H-36248-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PTFA181001EV4R250XTMA1 Reel 250
    • 1 -
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    • 100 -
    • 1000 $73.9104
    • 10000 $73.9104
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    PTFA181001E Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTFA181001E Infineon Technologies 1800 MHz to 2000 MHz; Package: PG:H-36248-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 1,805.0 - 1,880.0 MHz; P1dB (typ): 100.0 W; Supply Voltage: 28.0 V Original PDF
    PTFA181001EV4 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 100W H-36248-2 Original PDF
    PTFA181001EV4R250 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 100W H-36248-2 Original PDF
    PTFA181001EV4R250XTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 100W H-36248-2 Original PDF
    PTFA181001E V4 T500 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS Original PDF
    PTFA181001EV4XWSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 100W H-36248-2 Original PDF

    PTFA181001E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description ue 25 IM3 -38 tin 20 -43 15 -48 10 ACPR -53 34 36 38 40 42 44 t od Broadband internal matching d 30 Drain Efficiency % Efficiency Thermally-enhanced packages


    Original     		PDF PTFA181001E PTFA181001F H-37248-2 H-36248-2 PTFA181001E PTFA181001F 100-watt

    d 1879 TRANSISTOR

    Abstract: ptfa181001e DATASHEET BCP56 LM7805 PTFA181001E PTFA181001F
    Text: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and


    Original     		PDF PTFA181001E PTFA181001F PTFA181001E PTFA181001F 100-watt 18stances. d 1879 TRANSISTOR ptfa181001e DATASHEET BCP56 LM7805

    d 1879 TRANSISTOR

    Abstract: elna 50v LM7805 05 BCP56 LM7805 PTFA181001E PTFA181001F LM7805 voltage regulator packages 1844 MAGNETICS
    Text: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and


    Original     		PDF PTFA181001E PTFA181001F PTFA181001E PTFA181001F 100-watt H-36248-2 H-37248-2 d 1879 TRANSISTOR elna 50v LM7805 05 BCP56 LM7805 LM7805 voltage regulator packages 1844 MAGNETICS

    Untitled

    Abstract: No abstract text available
    Text: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and


    Original     		PDF PTFA181001E PTFA181001F PTFA181001E PTFA181001F 100-watt H-36248-2 H-37248-2

    Untitled

    Abstract: No abstract text available
    Text: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the DCS band. Full gold metallization ensures


    Original     		PDF PTFA181001E PTFA181001F 100-watt, H-30248-2 H-31248-2 1880dangerous

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PDF PTFA041501E PTFA041501F PTFA070601E PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 H-36260-2 PTFA142401EL PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Text: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


    Original     		PDF PTFA041501E PTFA041501F PTFA070601E 725-7452FL PG-DSO-20-63 PG-SON-10 H-33265-8 H-34265-8 H-36248-2 H-37248-2 PTFA041501E PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PDF PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503