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    PTF211802 Search Results

    PTF211802 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTF211802 Infineon Technologies LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz Original PDF
    PTF211802A Infineon Technologies LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz Original PDF
    PTF211802E Infineon Technologies LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz Original PDF

    PTF211802 Datasheets Context Search

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    CW 7805

    Abstract: CW 7805 regulator ERA-H-30275-4-1-2304 LM7805 7805 datasheet DD 127 D TRANSISTOR free download voltage regulator 7805 data sheet LM 7805 DATA SHEET uA 7805 365 pF variable capacitor
    Text: PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTF211802 PTF211802 CW 7805 CW 7805 regulator ERA-H-30275-4-1-2304 LM7805 7805 datasheet DD 127 D TRANSISTOR free download voltage regulator 7805 data sheet LM 7805 DATA SHEET uA 7805 365 pF variable capacitor

    TRANSISTOR CW 7805

    Abstract: CW 7805
    Text: Preliminary PTF211802E LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTF211802E PTF211802 TRANSISTOR CW 7805 CW 7805

    TRANSISTOR CW 7805

    Abstract: CW 7805 CW 7805 regulator BCP56 LM7805 P10ECT-ND PTF211802E F1814
    Text: PTF211802E Thermally Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTF211802E is a 180-watt, internally matched, laterally double-diffused, GOLDMOS push-pull FET intended for WCDMA applications from 2110 to 2170 MHz. Thermally enhanced packaging provides the coolest operation


    Original     		PDF PTF211802E PTF211802E 180-watt, TRANSISTOR CW 7805 CW 7805 CW 7805 regulator BCP56 LM7805 P10ECT-ND F1814

    CW 7805

    Abstract: CW 7805 regulator BCP56 LM7805 P10ECT-ND PTF211802A regulator CW 7805
    Text: PTF211802A LDMOS RF Power Field Effect Transistor 180 W, 2110 – 2170 MHz Description Features The PTF211802A is a 180-watt, internally-matched, laterally double-diffused, GOLDMOS push-pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTF211802A PTF211802A 180-watt, CW 7805 CW 7805 regulator BCP56 LM7805 P10ECT-ND regulator CW 7805

    cw 7805

    Abstract: CW 7805 regulator TRANSISTOR CW 7805
    Text: PTF211802 LDMOS RF Power Field Effect Transistor 180 W, 2110–2170 MHz Description Features The PTF211802 is a 180 W, internally matched, laterally double–diffused, GOLDMOS push–pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and


    Original     		PDF PTF211802 PTF211802 cw 7805 CW 7805 regulator TRANSISTOR CW 7805