PTF211301 Search Results

PTF211301 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTF211301		Infineon Technologies	LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz		Original	PDF
PTF211301A		Infineon Technologies	LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz		Original	PDF

PTF211301 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PTF211301E Abstract: No abstract text available Text: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier	Original	PDF	PTF211301E PTF211301F 130watt, PTF211301F*
702 Z TRANSISTOR smd Abstract: 702 Z smd TRANSISTOR ATC capacitor 702 TRANSISTOR smd capacitor 2220 702 H transistor smd PCC104BCT LM7805 smd marking us capacitor pf l1 transistor smd marking ND Text: PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description Features The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures	Original	PDF	PTF211301 PTF211301 702 Z TRANSISTOR smd 702 Z smd TRANSISTOR ATC capacitor 702 TRANSISTOR smd capacitor 2220 702 H transistor smd PCC104BCT LM7805 smd marking us capacitor pf l1 transistor smd marking ND
702 Z TRANSISTOR smd Abstract: 702 Z smd TRANSISTOR 702 k TRANSISTOR smd SMD transistor marking 702 Text: PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description Features The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures	Original	PDF	PTF211301 PTF211301 702 Z TRANSISTOR smd 702 Z smd TRANSISTOR 702 k TRANSISTOR smd SMD transistor marking 702
PTF211301F Abstract: PTF211301E BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd Text: PTF211301E PTF211301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2110 – 2170 MHz Description The PTF211301E and PTF211301F are thermally-enhanced, 130watt, internally matched GOLDMOS FETs intended for WCDMA applications. They are characaterized for single- and two-carrier	Original	PDF	PTF211301E PTF211301F PTF211301E PTF211301F 130watt, PTF211301F* BCP56 LM7805 PTF211301A p4 smd 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd