PTF210301 Search Results
PTF210301 Price and Stock
Infineon Technologies AG PTF210301E V1 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PTF210301E V1 | 516 |
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PTF210301 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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PTF210301 |
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LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz | Original | |||
PTF210301A |
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LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz | Original | |||
PTF210301E |
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LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz | Original |
PTF210301 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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PTF210301EContextual Info: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation |
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PTF210301E PTF210301F PTF210301E PTF210301F 30-watt, PTF210301F* | |
PTF210301E
Abstract: marking us capacitor pf l1 PTF210301 PTF210301A DD 127 D TRANSISTOR
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PTF210301 PTF210301 PTF210301E marking us capacitor pf l1 PTF210301A DD 127 D TRANSISTOR | |
PTF210301A
Abstract: PTF210301E
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PTF210301A PTF210301A 30-watt, PTF210301E | |
Contextual Info: PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description Features The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. |
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PTF210301 PTF210301 |