PTF191601 Search Results

PTF191601 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
PTF191601	Infineon Technologies	LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz	Original	PDF
PTF191601E	Infineon Technologies	LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz	Original	PDF
PTF191601E	Infineon Technologies	1800 MHz to 2000 MHz; Package: PG:30260; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 1,930.0 - 1,990.0 MHz; P_1dB (typ): 160.0 W; Supply Voltage: 28.0 V	Original	PDF

PTF191601 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PTF191601E Abstract: BCP56 LM7805 ATC 4r7 capacitor 100b Text: PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the	Original	PDF	PTF191601E PTF191601F PTF191601E PTF191601F 160-watt, PTF191601F* BCP56 LM7805 ATC 4r7 capacitor 100b
PTF191601 Abstract: PTF191601E Text: Advance Information PTF191601 LDMOS RF Power Field Effect Transistor 160 W, 1930 – 1990 MHz Description Features The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability.	Original	PDF	PTF191601 PTF191601 PTF191601E

Catalog Datasheet

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PDF

Document Tags

PTF191601E

Abstract: BCP56 LM7805 ATC 4r7 capacitor 100b
Text: PTF191601E PTF191601F Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930 – 1990 MHz Description The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the

Original

PDF

PTF191601E PTF191601F PTF191601E PTF191601F 160-watt, PTF191601F* BCP56 LM7805 ATC 4r7 capacitor 100b

PTF191601

Abstract: PTF191601E
Text: Advance Information PTF191601 LDMOS RF Power Field Effect Transistor 160 W, 1930 – 1990 MHz Description Features The PTF191601 is a 160 W, internally matched GOLDMOS FET intended for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold metallization ensures excellent device lifetime and reliability.