PTF080901A Search Results

PTF080901A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTF080901AV1		Infineon Technologies	Transistor Mosfet N-CH 65V		Original	PDF

PTF080901A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PTF080901A Abstract: 080901E smd marking PTF ptf080901e resistor 1 ohms philips resistor LDMOS 90W Text: Preliminary PTF 080901 LDMOS RF Power Field Effect Transistor 90 W, 860–960 MHz Description Key Features The PTF 080901 is a 90–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.	Original		PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

PTF080901A

Abstract: 080901E smd marking PTF ptf080901e resistor 1 ohms philips resistor LDMOS 90W
Text: Preliminary PTF 080901 LDMOS RF Power Field Effect Transistor 90 W, 860–960 MHz Description Key Features The PTF 080901 is a 90–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Original

PDF