PTF080901A Search Results

PTF080901A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PTF080901AV1		Infineon Technologies	Transistor Mosfet N-CH 65V		Original	PDF

PTF080901A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PTF080901A Abstract: 080901E smd marking PTF ptf080901e resistor 1 ohms philips resistor LDMOS 90W Contextual Info: Preliminary PTF 080901 LDMOS RF Power Field Effect Transistor 90 W, 860–960 MHz Description Key Features The PTF 080901 is a 90–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.	Original		PDF

Catalog Datasheet

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PTF080901A

Abstract: 080901E smd marking PTF ptf080901e resistor 1 ohms philips resistor LDMOS 90W
Contextual Info: Preliminary PTF 080901 LDMOS RF Power Field Effect Transistor 90 W, 860–960 MHz Description Key Features The PTF 080901 is a 90–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Original

PDF