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    PTF080101M Price and Stock

    Infineon Technologies AG PTF080101M-V1

    RF MOSFET LDMOS 28V RFP-10
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    DigiKey PTF080101M-V1 Reel 500
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    • 1000 $9.38778
    • 10000 $9.38778
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    PTF080101M Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTF080101M Infineon Technologies 700 MHz to 1000 MHz; Package: PG-RFP-10; Flange Type: Surface Mount; Matching: None; Frequency Band: 450.0 - 960.0 MHz; P1dB (typ): 10.0 W; Supply Voltage: 28.0 V; Original PDF
    PTF080101M Infineon Technologies Transistor Mosfet 65V 0.18A 10TSSOP Original PDF
    PTF080101M V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 10W TSSOP-10 Original PDF
    PTF080101MV1 Infineon Technologies Transistor Mosfet N-CH 65V 0.18A 10TSSOP Original PDF
    PTF080101MV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 10W TSSOP-10 Original PDF

    PTF080101M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSSOP10

    Abstract: TSSOP-10 infineon smd smd transistor infineon PTF080101M
    Text: Preliminary PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 860 – 960 MHz Description The PTF080101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the 860 to 960 MHz band. This LDMOS device operates at 50% efficiency P–1dB .


    Original     		PDF PTF080101M PTF080101M 10-watt PTF080101M* TSSOP-10 TSSOP10 TSSOP-10 infineon smd smd transistor infineon

    LM7805 smd 8 pin

    Abstract: smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 PTF080101M smd transistor marking C14
    Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF080101M PTF080101M 10-watt PG-RFP-10 LM7805 smd 8 pin smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 smd transistor marking C14

    LM7805 smd 8 pin

    Abstract: LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1
    Text: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		PDF PTF080101M PTF080101M 10-watt PG-RFP-10 LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    blf578

    Abstract: MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814
    Text: RF マニュアル第 12版 RF製品用のアプリケーションおよび設計マニュアル 2009年6月 ハイパフォーマンス・アナログを体験 NXPの RF マニュアルでRF設計がこ れまでになく簡単に 『NXPの RF マニュアル 』 は、今日RF設計者向けに市場に出回っているレファレンス・ツー


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN blf578 MRF6V2300N ic tea 2025 NXP SMD TRANSISTOR MARKING CODE s1 TEA 2025 equivalent blf278 rf amplifier radar amplifier s-band 2SK163 GaN ADS HSMP3814

    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


    Original     		PDF NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer

    A211801E

    Abstract: A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E
    Text: Preliminary Product Selection Guide Preliminary Product Selection Guide Pac kag es ffor or LDMO S RF P ower Tran sistor s and IC s ack age LDMOS Po ans ors ICs RF Power Product Selection Guide TEP AC - Therm al ly -Enh anc ed C er amic TEPA Thermal ally ly-Enh


    Original     		PDF H-30248-2 H-36248-2 H-30260-2 H-36260-2 H-30265-2 H-31248-2 H-37248-2 H-31260-2 H-31260-2 H-31265-2 A211801E A0912 TMA210 PTFA211801E A091201E "RF Power Transistors" ER 2680 PTF080101M PTF080101S PTF140451E

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF