PTF 10031 Search Results

PTF 10049

Contextual Info: ERICSSON ^ 3 Contents PTF 10007 . 3-41 PTF 10009. 3-71 PTE 10015. 3-45

ERICSSON 10031

Abstract: G200
Contextual Info: GOLDMOS PTF 10031 Field Effect Transistor 50 Watts, 1.0 GHz Description The PTF 10031 is a 50–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. This device operates at 55% efficiency with 13 dB gain. Nitride surface passivation and full gold

ERICSSON 10031

Abstract: G200
Contextual Info: PTF 10031 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization ensure

Contextual Info: PTF 10015 50 Watts, 300–960 MHz GOLDMOS Field Effect Transistor Description Features The PTF 10015 is a 50–watt GOLDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. This device operates at 55% efficiency with 13 dB gain. Nitride surface

P4917-ND

Abstract: capacitor siemens 4700 35 G200
Contextual Info: PTF 10015 50 Watts, 300–960 MHz GOLDMOS Field Effect Transistor Description Features The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full

ERICSSON 10031

Abstract: PTF 10031 ericsson b
Contextual Info: ERICSSON ^ PTF 10031 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10031 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 45 watts minimum output power. Nitride surface passivation

transistor 21789

Abstract: ERICSSON 10031 PTF 10031
Contextual Info: ERICSSON í PTF 10031 45 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10031 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 45 w a tts m inim um o u tp u t power. N itride surface

Contextual Info: ERICSSON ^ PTE 10015* 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10015 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1 0 GHz. It is rated at 45 watts minimum output power. Nitride surface

Omron H3BA

Abstract: smd transistor A6t omron relay 12VDC, IEC255 omron h3ba timer smd a6t double diode smd transistor A6a h3ba 5 pin relay 12vdc 4088 cross reference capillary rotary compressor RELAY OMRON LZN 203
Contextual Info: 2005 Components Catalogue Text 2005 Catalogue 1 Contents Welcome to the 2005 Omron Catalogue Section 1 – POWER RELAYS 8-9 10 - 168 Technical Information – Power & Signal Relays 10 - 31 Selection Guide 32 - 43 G5B 44 - 47 G5NB-E 48 - 51 G5SB 52 - 55 G6M

schematic diagram atx Power supply 500w

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

EATON CM20A

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Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main