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    PTB 20181 Search Results

    PTB 20181 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    10127720-181LF Amphenol Communications Solutions Minitek® Pwr 3.0, Dual Row, Right Angle Through Hole Header, 18 Positions, 100u\\ Tin plating, Non GW Compatible LCP, With Pegs, Tray Packing. Visit Amphenol Communications Solutions
    10127720-181RLF Amphenol Communications Solutions Minitek® Pwr 3.0, Dual Row, Right Angle Through Hole Header, 18 Positions, 100u\\ Tin plating, Non GW Compatible LCP, With Pegs, Tape and Reel. Visit Amphenol Communications Solutions
    10127720-181GLF Amphenol Communications Solutions Minitek® Pwr 3.0, Dual Row, Right Angle Through Hole Header, 18 Positions, 100u\\ Tin plating, GW Compatible LCP, With Pegs, Tray Packing. Visit Amphenol Communications Solutions
    10127720-181GRLF Amphenol Communications Solutions Minitek® Pwr 3.0, Dual Row, Right Angle Through Hole Header, 18 Positions, 100u\\ Tin plating, GW Compatible LCP, With Pegs, Tape and Reel. Visit Amphenol Communications Solutions

    PTB 20181 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PTB20181 Ericsson 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Original PDF
    PTB 20181 Ericsson Components BJT, NPN, RF Power Transistor, IC 1.1A Original PDF

    PTB 20181 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PTB 20181

    Abstract: No abstract text available
    Text: e PTB 20181 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP


    Original
    1-877-GOLDMOS 1301-PTB PTB 20181 PDF

    CERBERUS ocds TC1797

    Abstract: SSC 9101 TC1797 multican testmode stcon flash micro ALPHA 1077 APA
    Text: 32-Bit TC1797 32-Bit Single-Chip Microcontroller User’s Manual V1.1 2009-05 Microcontrollers Edition 2009-05 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original
    32-Bit TC1797 32-Bit CERBERUS ocds TC1797 SSC 9101 TC1797 multican testmode stcon flash micro ALPHA 1077 APA PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ Contents PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB PTB 20003. 7-53 20004. 7-23


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    PTB 20181

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Preliminary Key Features Description The 20181 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 6 Watts minimum output power


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    915-960MHz) PTB 20181 PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts m inim um outp ut power, it may be used fo r both CW and PEP


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    PDF