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    PSPICE HIGH FREQUENCY MOSFET Search Results

    PSPICE HIGH FREQUENCY MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    PSPICE HIGH FREQUENCY MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Sharp amplifier SM30

    Abstract: Spice Model for TMOS Power MOSFETs NMOS depletion pspice model RFH75N05 datasheet Spice 2 computer models for hexfets RFH75N05 Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE
    Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options TM October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power


    Original     		PDF -55oC 175oC. Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs NMOS depletion pspice model RFH75N05 datasheet Spice 2 computer models for hexfets RFH75N05 Hal Ronan AN9210 TRANSFORMER ERL 35 VDMOS DEVICE

    n mosfet depletion pspice model parameters

    Abstract: NMOS depletion pspice model Sharp amplifier SM30 pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets
    Text: Harris Semiconductor No. AN9210 Harris Power MOSFETs February 1992 A NEW PSPICE SUBCIRCUIT FOR THE POWER MOSFET FEATURING GLOBAL TEMPERATURE OPTIONS Author: William J. Hepp - Harris Semiconductor - Mountaintop PA C. Frank Wheatley Jr. - SM, IEEE - Consultant


    Original     		PDF AN9210 ED-17 n mosfet depletion pspice model parameters NMOS depletion pspice model Sharp amplifier SM30 pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets

    Spice 2 computer models for hexfets

    Abstract: pspice high frequency mosfet n mosfet depletion pspice model parameters RFH75N05 datasheet Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs an8610 RFH75N05 SM30 AN1043 Spice Model for TMOS Power MOSFETs
    Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and is presented. It accurately portrays the vertical DMOS power


    Original     		PDF -55oC 175oC. Spice 2 computer models for hexfets pspice high frequency mosfet n mosfet depletion pspice model parameters RFH75N05 datasheet Sharp amplifier SM30 Spice Model for TMOS Power MOSFETs an8610 RFH75N05 SM30 AN1043 Spice Model for TMOS Power MOSFETs

    pspice high frequency mosfet

    Abstract: Spice 2 computer models for hexfets Spice Model for TMOS Power MOSFETs ERL 35 transformer RFH75N05 RFH75N05 datasheet Sharp SM30 NMOS depletion pspice model n mosfet depletion pspice model parameters SM30
    Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract Title N92 bt A w pice bcirt r e wer OST atur- accepted by users, and the ease of parameter extraction should be demonstrated. An empirical sub-circuit was implemented in PSPICE and


    Original     		PDF -55oC 175oC. pspice high frequency mosfet Spice 2 computer models for hexfets Spice Model for TMOS Power MOSFETs ERL 35 transformer RFH75N05 RFH75N05 datasheet Sharp SM30 NMOS depletion pspice model n mosfet depletion pspice model parameters SM30

    Spice 2 computer models for hexfets

    Abstract: Spice Model for TMOS Power MOSFETs RFH75N05 datasheet Sharp amplifier SM30 NMOS depletion pspice model RFH75N05 Malouyans AN75 AN1043 Spice Model for TMOS Power MOSFETs SM30
    Text: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options October 1999 Abstract /Title AN75 0 Subect A ew spice ubciruit or he ower OSET eaturng lobal emeraure ption ) Autho () Keyords Interil orpoation, emionuctor accepted by users, and the ease of parameter extraction


    Original     		PDF

    mosfet SPICE MODEL

    Abstract: self-heating subckt pspice high frequency mosfet A SPICE II subcircuit representation for power MOSFETs using empirical methods ronan difference between orcad pspice parallel mosfet MOSFET S1A FDP038AN08A0 PSPICE Orcad
    Text: Application Note 7533 October 2003 A Revised MOSFET Model With Dynamic Temperature Compensation Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macromodel implementation is the culmination of years of evolution in MOSFET


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    pspice high frequency mosfet

    Abstract: pspice self-heating model list transistor Power MOSFET, Fairchild pspice model list transistor ORCAD PSPICE BOOK TRANSISTOR S1A 64 AN-7510 FDP038AN06A0 pspice model list PCIM 177
    Text: Application Note 7532 October 2003 A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Keywords Device characterization, device modeling, high power discrete devices, modeling,


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    Dell Latitude csx

    Abstract: pspice model list transistor pspice self-heating model list transistor PCIM 177 ronan eLED ORCAD PSPICE BOOK FDP038AN06A0 FDP038AN08A0 AN-7510
    Text: Application Note 7534 July 2004 A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This


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    p-channel pspice model

    Abstract: AN9321 AN9322 MS-012AA RF1K49092 RF1K4909296
    Text: RF1K49092 S E M I C O N D U C T O R January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is


    Original     		PDF RF1K49092 RF1K49092 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) p-channel pspice model AN9321 AN9322 MS-012AA RF1K4909296

    AN7254

    Abstract: AN7260 AN9321 AN9322 MS-012AA RF1K49086 RF1K4908696 pspice high frequency mosfet
    Text: Power MOSFET Data Sheets RF1K49086 S E M I C O N D U C T O R 3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 3.5A, 30V The RF1K49086 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49086 RF1K49086 1e-30 74e-4 13e-6) 45e-7) 16e-3 16e-6) AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K4908696 pspice high frequency mosfet

    AN7254

    Abstract: AN7260 AN9321 AN9322 MS-012AA RF1K49090 RF1K4909096
    Text: RF1K49090 S E M I C O N D U C T O R 3.5A, 12V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 3.5A, 12V The RF1K49090 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49090 RF1K49090 1e-30 15e-4 13e-7) 00e-4 00e-6) 155e-3 AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K4909096

    MS-012AA

    Abstract: RF1K49224 RF1K4922496
    Text: RF1K49224 S E M I C O N D U C T O R 3.5A and 2.5A, 30V, 0.060 and 0.150 Ohms, Complementary LittleFET Power MOSFET June 1997 Features Description • 3.5A, 30V N-Channel 2.5A, 30V (P-Channel) • Peak Current vs Pulse Width Curve The RF1K49224 complementary power MOSFET is


    Original     		PDF RF1K49224 RF1K49224 1-800-4-HARRIS MS-012AA RF1K4922496

    RF1K49093

    Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
    Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49093 RF1K49093 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) AN7254 AN9321 AN9322 MS-012AA RF1K4909396

    n mosfet pspice parameters

    Abstract: AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49088 RF1K4908896
    Text: RF1K49088 S E M I C O N D U C T O R 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 3.5A, 30V The RF1K49088 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This


    Original     		PDF RF1K49088 RF1K49088 1e-30 02e-3 98e-6) 50e-3 70e-6) 53e-3 13e-7) n mosfet pspice parameters AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K4908896

    RF1K4915796

    Abstract: AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49157 211E-3 262E-9
    Text: RF1K49157 S E M I C O N D U C T O R 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 6.3A, 30V The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This


    Original     		PDF RF1K49157 RF1K49157 59e-4 87e-7) 08e-3 43e-3 57e-6) RF1K4915796 AN7254 AN7260 AN9321 AN9322 MS-012AA 211E-3 262E-9

    Write your own generic SPICE Power Supplies controller models

    Abstract: Christophe Basso .subckt LM311 pwmcm ISSPICE Spice model xfmr xfmr spice sandler subcircuit with power switch 3016U
    Text: Write your own generic SPICE Power Supplies controller models Christophe BASSO November 1996 Manuscript for PCIM US Simulating the switching behavior of a Switch Mode Power Supply SMPS is not always an easy task. This is especially true if the designer wants to use an exact SPICE model for the Pulse Width Modulator


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    mosfet motor dc 48v

    Abstract: AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496
    Text: RF1K49154 S E M I C O N D U C T O R 2A, 60V, ESD Rated, Avalanche Rated, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2A, 60V The RF1K49154 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This


    Original     		PDF RF1K49154 RF1K49154 52e-2 27e-4) 55e-3 03e-3 64e-6) 20e-3 67e-6) mosfet motor dc 48v AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K4915496

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
    Text: RFF70N06 S E M I C O N D U C T O R 25A†, 60V, Hermetically Packaged, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 25A†, 60V JEDEC TO-254AA • rDS ON = 0.025Ω GATE SOURCE • Temperature Compensating PSPICE Model


    Original     		PDF RFF70N06 O-254AA 150oC RFF70N06 AN7254 AN7260 AN9321 AN9322 RFG70N06

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    transistor 42-10a

    Abstract: transistor 42-10a 3 pin mosfet 42-10a
    Text: SC4210A 8-Pin N-FET Linear Regulator Controller POWER MANAGEMENT Description Features The SC4210A Linear Regulator Controller includes all the features required for an extremely low dropout linear regulator that uses an external N-channel MOSFET as the pass transistor. The device can operate from input


    Original     		PDF SC4210A SC4210A FDB7030BL transistor 42-10a transistor 42-10a 3 pin mosfet 42-10a

    transistor 42-10a

    Abstract: transistor 42-10a 3 pin SC4210
    Text: SC4210A 8-Pin N-FET Linear Regulator Controller POWER MANAGEMENT Description Features The SC4210A Linear Regulator Controller includes all the features required for an extremely low dropout linear regulator that uses an external N-channel MOSFET as the pass transistor. The device can operate from input


    Original     		PDF SC4210A SC4210A FDB7030BL transistor 42-10a transistor 42-10a 3 pin SC4210

    transistor 42-10a

    Abstract: transistor 42-10a 3 pin SC4210AIMSTRT SC4210 8224k0
    Text: SC4210A 8-Pin N-FET Linear Regulator Controller POWER MANAGEMENT Description Features The SC4210A Linear Regulator Controller includes all the features required for an extremely low dropout linear regulator that uses an external N-channel MOSFET as the pass transistor. The device can operate from input


    Original     		PDF SC4210A SC4210A FDB7030BL transistor 42-10a transistor 42-10a 3 pin SC4210AIMSTRT SC4210 8224k0

    op amp 741 model PSpice

    Abstract: AUTOMATIC ROOM TEMPERATURE CONTROL op amp 741 model Spice 741 OP Amp LT1007 LT1078 OP-27 ERL-M382
    Text: rruncAB Application Note 41 TECHNOLOGY April 1990 Questions and Answers on the SPICE Macromodel Library Walt Jung INTRODUCTION This document is provided to answer some of the potential questions raised about the Linear Technology SPICE macromodel library. It assumes that you have a diskette


    OCR Scan     		PDF w/387math LT1007 100mV -50mV -100mV AN41-8 op amp 741 model PSpice AUTOMATIC ROOM TEMPERATURE CONTROL op amp 741 model Spice 741 OP Amp LT1078 OP-27 ERL-M382

    op amp 741 model PSpice

    Abstract: op amp 741 model Spice LT1007 LT1078 OP-27 pspice high frequency transistor 741 spice model ERL-M382 OP27
    Text: um Application Note 41 TECHNOLOGY Apr¡| 199Q Questions and Answers on the SPICE Macromodel Library Walt Jung INTRODUCTION This document is provided to answer some of the potential questions raised about the Linear Technology SPICE macromodel library. It assumes that you have a diskette


    OCR Scan     		PDF -50mv w/387 AN41-8 op amp 741 model PSpice op amp 741 model Spice LT1007 LT1078 OP-27 pspice high frequency transistor 741 spice model ERL-M382 OP27