PROPERTIES OF TRANSISTOR Search Results

uv flame sensor

Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
Contextual Info: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor­

GaAs FET operating junction temperature

Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .

diode 12A3

Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltagecontrolled properties of MOSFETs. Advantages to the user: • rugged, short-circuit-proof device

mosfet modern applications

Abstract: Circuit Protection Devices NTC Thermistors NTC Thermistor FOR Thermistor NTC NTC THERMISTORS
Contextual Info: NTC thermistors for temperature compensation of amplifiers Description Amplifiers e.g. bipolar transistors, MOSFET, HEMT, … are important devices in all modern communication and electronic systems. Therefore a temperature drift of their electrical properties, which can

igbt types

Abstract: IGBT snubber for inductive load igbt igbt in smps l series IGBT design drive circuit of IGBT
Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are synergistically melded with the voltagecontrolled properties of MOSFETs. Sum mary of various IGBT types. Table 1: Standard devices (page 8)

IGBT snubber for inductive load

Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are synergistically melded with the voltagecontrolled properties of MOSFETs. Advantages to the user: • rugged, short-circuit-proof device

IGBT snubber for inductive load

Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are synergistically melded with the voltagecontrolled properties of MOSFETs. Advantages to the user: • rugged, short-circuit-proof device

BTS 3900 a

Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device

MAB8400

Abstract: PCF84CXXXA 3843 application note a698 MST 718 RBS trx MAB8048 PC10 PC11 jco resonator
Contextual Info: Preliminary specification Philips Semiconductors 8-bit microcontrollers PCF84CXXXA Family 1 INTRODUCTION 3 GENERAL DESCRIPTION This data sheet describes the shared properties of the PCF84CXXXA family of microcontrollers and its quickly growing number of derivative microcontrollers. For a

mst 702 lf

Abstract: LA617 mst 702 9398 393 40011
Contextual Info: Preliminary specification Philips Semiconductors 8-bit microcontrollers PCF84CXXXA Family 1 INTRODUCTION 3 GENERAL DESCRIPTION This data sheet describes the shared properties of the PCF84CXXXA family of microcontrollers and its quickly growing number of derivative microcontrollers. For a

DN7-11

Abstract: DP7-11
Contextual Info: PHILIPS DB7-11 DH7-11 DN7-11 DP7-11 CATHODE-RAY TUBE for use In transistorized oscilloscopes with flat face and post-deflection acceleration by means of a helical electrode SCREEN For screen properties please refer to front of this section Useful screen diameter

Contextual Info: 37 EMBEDDED Graphics LCDs are increasingly being used in embedded applications. Professor Dr Dogan Ibrahim of the Near East University in Cyprus describes the properties of these displays and explains the design of a simple colour graphic LCD GLCD based project

Contextual Info: Glossary of Letters and Symbols *> General The following letters are used to indicate electrical properties VcER of transistors. V: Voltage I : Current P: Power f : Frequency w ith resistor inserted betw een the base and em itter. C: Capacitance N: Noise This is determined by V cbo and Rbe.

SP1750

Abstract: SP1000 SP1950 SP400 SP2000 SP175
Contextual Info: Choosing the right Sil-Pad Starts with the Mechanical and Electrical Properties MOUNTING TECHNIQUES MOUNTING PRESSURE AND Typical mounting techniques include: • A Spring clip, which exerts a centralized clamping force on the body of the transistor. The greater the mounting

4BB7

Abstract: a699 3843 application note RBL 43 P TRANSISTOR MAB8048 MAB8400 PC10 PC11 PCD33XXA
Contextual Info: Product specification Philips Semiconductors 8-bit telecom microcontrollers PCD33XXA Family 1 INTRO D UCTIO N 3 G ENERAL DESCRIPTION This data sheet describes the shared properties of the PCD 33XXA fam ily of m icrocontrollers and its quickly growing num ber of derivative m icrocontrollers. For a

Burr-Brown Application Note AN-165

Abstract: design of 4-20mA transmitter for bridge type transducer using op-amp burr-brown linear catalog diode germanium catalog band pass active filters uaf42 6.4V Zener spice model Siliconix FET Design Catalog bourns torque sensor harmonic HLP 4200 solomon lcd lm
Contextual Info: Burr-Brown Collection o f A p p licatio n s Bulletins L B U R R - BROWN • b b i TABLE OF CONTENTS SECTION 1, Burr-Brown Technical Literature Thermal and electrical properties of selected packaging m aterials. 1

Contextual Info: Heat Transfer Compounds Page 1 of 2 Non-Silicone Heat Transfer Compound 8610 z Special synthetic base, fortified with metal oxides and compounded to a paste-like consistency for ease of application z High efficient thermal conductive properties { Means more rapid transfer of heat for longer component life

pnp phototransistor

Abstract: 7400 logic gate ic IC TTL 7400 7400 TTL datasheet 7400 TTL TTL 7400 propagation delay in IC TTL 7400 7400 family TTL phototransistor with amplifier 7400 datasheet ttl gate
Contextual Info: Applications of Optocouplers Appnote 2 The IL1 is the first in a family of optocouplers. These products are also called photon coupled isolators, photocouplers, photocoupled pairs and optically coupled pairs. All of the characteristics of the IL1 are electrical: it has no external optical properties. Hence optoisolators are not optoelectronic devices; they

pnp phototransistor

Abstract: 7400 TTL 7400 logic gate ic IC TTL 7400 information OF ic 7400 phototransistor "linear output" TTL 7400 7400 ttl gate digital ic 7400 phototransistor with amplifier
Contextual Info: Applications of Optocouplers Appnote 2 The IL1 is the first in a family of optocouplers. These products are also called photon coupled isolators, photocouplers, photocoupled pairs and optically coupled pairs. All of the characteristics of the IL1 are electrical: it has no external optical properties. Hence optoisolators are not optoelectronic devices; they

7400 TTL

Abstract: IC TTL 7400 pnp phototransistor 7400 logic gate ic Phototransistor with base emitter TTL 7400 propagation delay Optocouplers for ttl output 7400 IC series phototransistor with amplifier IC TTL 7400 propagation delay
Contextual Info: Applications of Optocouplers Appnote 2 The IL1 is the first in a family of optocouplers. These products are also called photon coupled isolators, photocouplers, photocoupled pairs and optically coupled pairs. All of the characteristics of the IL1 are electrical: it has no external optical properties. Hence optoisolators are not optoelectronic devices; they

P-T0263-7-3

Abstract: dissipation thermic 5206-2G SIEMENS MOTOR
Contextual Info: 7 Thermal Properties and the Cooling of PICs M General The power dissipation occurring in PICs generates heat which needs to be removed via suitable heatconducting materials. In the case of low and medium dissipation, the packages in which the PICs are sup­

CECC 30801

Contextual Info: Technical Summary and Application Guidelines SECTION 5 MECHANICAL AND THERMAL PROPERTIES OF CAPACITORS 5.1 Acceleration NOTE: These recommendations also in compliance with EIA are guidelines only. With care and control, smaller footprints may be considered for

74s281

Abstract: bit-slice SN54S/74S281 Aop catalog SBP0400 74S482
Contextual Info: 1. INTRODUCTION The SBP0400A and SBP0401A are 4-bit expandable parallel binary processor elements, each monolithically integrating 1660 functional gates. These controller/processor building blocks combine the unique properties of Integrated Injection Logic |2 l | with a microprogrammable bit-siice architecture to offer a high degree of

SFH6721

Abstract: 2N2222 transistor output curve OPTOCOUPLER HAND BOOK optocoupler darlington SFH6136 SFH6343 SFH6345 SFH6711 SFH6732 SFH600-3
Contextual Info: VISHAY Vishay Semiconductors Optocoupler Common Mode Transient Immunity CMTI – Theory and Practical Solutions (Appnote 83) 1 Introduction This application note discusses the common mode transient immunity (CMTI) properties of optocouplers. It covers phototransistor output and optically coupled