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    PREFERRED PACKAGE CODE UM Search Results

    PREFERRED PACKAGE CODE UM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    PREFERRED PACKAGE CODE UM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    PDF OT-353

    SOT-353 Q2

    Abstract: SOT353 footprint
    Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    PDF OT-353 SOT-353 Q2 SOT353 footprint

    Untitled

    Abstract: No abstract text available
    Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    PDF OT-353

    Untitled

    Abstract: No abstract text available
    Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    PDF OT-353

    ph 4148 zener diode

    Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
    Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS


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    PDF DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148

    Untitled

    Abstract: No abstract text available
    Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:


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    PDF TGA4516-TS 20dBm 1050mA TGA4516 0007-inch

    Untitled

    Abstract: No abstract text available
    Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:


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    PDF TGA4516-TS 20dBm TGA4516 TGA45cal 0007-inch TGA4516-TS

    ka band gaas fet Package

    Abstract: TGA4516 ka-band amplifier AMC8515
    Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:


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    PDF TGA4516-TS 20dBm TGA4516 1050mA ka band gaas fet Package ka-band amplifier AMC8515

    COLOR tv tube charger circuit diagrams

    Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a

    Schottky Diode 039 B34

    Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0001-0809 Schottky Diode 039 B34 S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D

    Untitled

    Abstract: No abstract text available
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with


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    PDF OT-353

    A016 SMD

    Abstract: M8340102K smd marking code A008 smd A018 MDP1603 a015 SMD AC 31061 10k resistor array SIP a014 SMD transistor a015 SMD
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book rEsIStor ARRays and Networks vishay DALE vsD-db0011-0410 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vsD-db0011-0410 A016 SMD M8340102K smd marking code A008 smd A018 MDP1603 a015 SMD AC 31061 10k resistor array SIP a014 SMD transistor a015 SMD

    philips kt-347

    Abstract: philips kt Philips KT capacitors DR03111 philips 347 KT
    Text: Philips Components Product specification Polyester film capacitors KT 347 KT RADIAL PHENOLIC LACQUERED CAPACITORS PITCH 10/15/22.5/27.5 mm handbook, 2 columns DR03101 Fig.1 Simplified outline. FEATURES • Low-inductive wound cell of metal foil and a polyethylene


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    PDF DR03101 philips kt-347 philips kt Philips KT capacitors DR03111 philips 347 KT

    Untitled

    Abstract: No abstract text available
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with


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    PDF OT-353

    Untitled

    Abstract: No abstract text available
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with


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    PDF OT-353

    Untitled

    Abstract: No abstract text available
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with


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    PDF OT-353

    GENERAL SEMICONDUCTOR MARKING UJ SMA

    Abstract: US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08
    Text: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Ultrafast reverse recovery time • Low switching losses, high efficiency


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    PDF J-STD-020C, DO-214AC 2002/95/EC 2002/96/EC 03-Jul-06 GENERAL SEMICONDUCTOR MARKING UJ SMA US1J-E3/5AT us1m datasheet us1m vishay GENERAL SEMICONDUCTOR MARKING UM US1J-E3/61T JESD22-B102D J-STD-002B us1g vishay RECTIFIER marking UG 08

    TO-131 Package

    Abstract: ST INTERBUS ZF24 6180B zf transmission
    Text: IBS ST ZF 24 BKM-LK-OPC Bus Terminal Module With Optical Fiber Connection Data Sheet 6180B 6 1 8 0 A 0 0 0 11/2001 This data sheet is only valid in association with the IBS SYS PRO INST UM E User Manual. 5 Function 1 2 IN T E R Electrical isolation of remote bus segments


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    PDF 6180B TO-131 Package ST INTERBUS ZF24 6180B zf transmission

    philips tcxo 4322 191

    Abstract: TDA 17821 philips 341 mkc TDA 7283 PHILIPS TCXO 4322 191 2 capacitor philips 341 mkc tda 3050 Philips 2222 053 90032 capacitors 594 varistor philips UAA 1250
    Text: BC Components Product Guide 1999 Contents Page BC Components 5 World Wide Web 6 Ordering 7 New Products & Highlights 9 Series Index 10 Ceramic Capacitors, Leaded 13 Film Capacitors 34 Electrolytic Capacitors 59 Film Dielectric Trimmer Capacitors 103 Fixed Linear Resistors


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    PDF BCB01 philips tcxo 4322 191 TDA 17821 philips 341 mkc TDA 7283 PHILIPS TCXO 4322 191 2 capacitor philips 341 mkc tda 3050 Philips 2222 053 90032 capacitors 594 varistor philips UAA 1250

    4J52

    Abstract: S1300 transistor
    Text: HEWLETT UM P A C K A R D pe*4' Optical Reflective Sensors Technical Data HEDS-1200 High R esolution Infrared Sensor HEDS-1300 Precision R esolution Sensor Features Description • Focused E m itter and D etector in a Single Package • TOS Package • B inning o f S ensors by


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    PDF HEDS-1200 HEDS-1300 4J52 S1300 transistor

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM FEATURES 60 M Hz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse Width: <5 ns Maxim um PW: 100 % Full-scale APPLICATIO NS Laser Printers


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    PDF AD9561 AD9561 AD9561. 28-Lead

    Lem LT 300 - t

    Abstract: No abstract text available
    Text: ANALOG DEVICES FEATURES 60 MHz Pulse Rate 8-Bit Resolution Center, Left or Right Justify Low Power: 700 m W typical M inim um Pulse W idth: <5 ns M axim um PW: 100 % Full-scale Pulse Width Modulator AD9561 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Laser Printers


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    PDF AD9561 AD9561 AD9561/PCB 28-Lead Lem LT 300 - t

    EPROM 27128

    Abstract: 27128 eprom 27128 block diagram 27128 ROM pin configuration 27128 pin configuration 27128 pin diagram S23128 S23128B S23128C S23128I
    Text: 128K Bit 16K X 8 Static NMOS ROM •> GOULD Electronics S23128 Features □ Fast Access Time: S23128B-250ns (0°C to +70°C) Maximum S23128C-200ns (0°C to +70°C) Maximum S23128l-300ns (— 40°C to +85°C) Maximum S23128M-300ns (-5 5 °C to +125°C) Maximum


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    PDF S23128 S23128B-250ns S23128C-200ns S23128l-300ns S23128M-300ns 110mW S23128 100pF 28-Pin EPROM 27128 27128 eprom 27128 block diagram 27128 ROM pin configuration 27128 pin configuration 27128 pin diagram S23128B S23128C S23128I

    27128 eprom

    Abstract: 27128 27128 block diagram GS312S 27128 pin diagram 27128 ROM pin configuration EPROM 27128
    Text: G53128 Microcircuits C M O S 16 ,38 4x 8 ROM Features General Description • Low pow er C M O S tech n o lo gy 200 ¿¿A S tandby ’ 20 mA O perating T h e G T E G 53128 R ead O n ly M em ory R O M is a 16.384 word by 8-bit device with a m axim um a c c e s s tim e of 250 n a n o se c­


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    PDF G53128 384x8 G53128 28-pin G53128, 27128 eprom 27128 27128 block diagram GS312S 27128 pin diagram 27128 ROM pin configuration EPROM 27128