Untitled
Abstract: No abstract text available
Text: PQ-45 Analog Diode Phase Shifters Features • Octave bands up to 18 GHz • Fast Phase responce as low as 10 nS • RF power operation 10 mW peak/CW, RF power survival 100 mW peak/CW • Bias connection using pin or connector options • Custom configurations available
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PQ-45
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: PQ-45 Analog Diode Phase Shifters Features • Octave bands up to 18GHz • Fast Phase responce as low as 10nS • RF power operation 10mW peak/CW, RF power survival 100mW peak/CW • Bias connection using pin or connector options • Custom configurations available
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PQ-45
18GHz
100mW
MIL-STD-883,
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adaa
Abstract: ACAA ABAA "temperature controller" Arrayed Waveguide Grating optical fiber G.653
Text: Alcatel 1912 AWG 16 channels 100 GHz DWDM Multiplexers/ DeMultiplexers Description Features The Alcatel 1912 AWG Arrayed Waveguide Grating is designed for DWDM systems and belongs to a family of high performance optical routing devices. This component offers an
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F-91625
adaa
ACAA
ABAA
"temperature controller"
Arrayed Waveguide Grating
optical fiber G.653
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Untitled
Abstract: No abstract text available
Text: <Semi-Condaato\ fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5943 The RF Idne 1.2 GHz -50 mAde NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON
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2N5943
50dBmVI
40dBmVI
50dBmV)
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ceramic capacitor Eurofarad X7R
Abstract: CEC CAPACITORS EUROFARAD capacitor datasheet ceramique EUROFARAD cec cea 271 EUROFARAD EUROFARAD CAPACITORS datasheet EUROFARAD datasheet CECC32101
Text: CONDENSATEURS CHIPS CERAMIQUE HYPERFREQUENCE MICROWAVE CERAMIC CHIP CAPACITORS SOMMAIRE SUMMARY Généralités sur les chips céramique multicouches hyperfréquence Feuilles particulières sur les chips céramique multicouches hyper. Généralités sur les condensateurs céramique monocouches hyper.
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facon capacitors
Abstract: CEC CAPACITORS resistor codification EUROFARAD EUROFARAD CAPACITORS datasheet EUROFARAD cec EUROFARAD cec 14 cec 2r0 1 CEW65 E24-E48-E96
Text: CONDENSATEURS CHIPS CERAMIQUE HYPERFREQUENCE MICROWAVE CERAMIC CHIP CAPACITORS SOMMAIRE SUMMARY Généralités sur les chips céramique multicouches hyperfréquence Feuilles particulières sur les chips céramique multicouches hyper. Généralités sur les condensateurs céramique monocouches hyper.
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BFY90
Abstract: 73180 Tfk 880 BFy 90 transistor
Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis in den GHz-Bereich Applications: General up to the GHz range Besondere Merkmale: Features: • Leistungsverstärkung 8 dB 800 MHz • Power gain 8 dB (800 MHz)
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-30dB
BFY90
73180
Tfk 880
BFy 90 transistor
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Untitled
Abstract: No abstract text available
Text: TOSHIBA M ICROW AVE POWER MICROWAVE SEMICONDUCTOR GaAs FET T IM 5359-30L TECHNICAL DATA FEATURES : • HIGH GAIN G u b = 8.5 dB at 5.3 GHz to 5.9 GHz ■ LOW INTERM ODULATIO N DISTORTION I M 3 = —45 dBc at Po = 34.5 dBm, Single Carrier Level ■ BROAD BAND INTERNALLY MATCHED
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5359-30L
dB160
TIM5359-30L
TIM5359-30L
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AN 17821
Abstract: AN 17821 A PO 111 oki marking CQ 629 KGF1607 8958 fet
Text: O K I Semiconductor KGF1607_ GaAs Ceramic Power FET for FM and FDMA Cellular Applications D E S C R IP T IO N The KGF1607 is a high-power, high-efficiency GaAs power FET that features high gain at high current w ith the ultra-low impedance drive required for cellular, ISM, PHS and PCS applications. This device is
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KGF1607_
KGF1607
KGF16071
22dBm,
850MHz
300mA
b724240
KGF1607
h7EL42L40
AN 17821
AN 17821 A
PO 111
oki marking
CQ 629
8958 fet
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pa 66 gf
Abstract: mixer RHG J FET AM LNA D218 T2901 TQFP48
Text: Temic T2901 S e m i c o n d u c t o r s Bluetooth Single-Chip Transceiver IC Description The T2901 is a bipolar intergrated circuit manufactured using TEMIC Semiconductors’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band especially for Bluetooth applications.
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t2901
T2901
48ABLE
120nH
21-Sep-99
TQFP48
pa 66 gf
mixer RHG
J FET AM LNA
D218
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transistor RCA 383
Abstract: RCA 7163 TA8647 rca 383 transistor RCA H 715 transistor C4 0168 RCA microwave oscillator TA8648 transistor amplifier 1ghz 1500 watts rca h 641
Text: File No. 641 RF Power Transistors Solid State Division 41025 41026 3-W and 10-W 1-GHz E m itter-B allasted Silicon N -P-N O verlay Transistors F o r Use in U H F /M ic ro w a v e C o m m o n -E m itte r Pow er A m p lifie rs , Oscillators, and Freq u en cy M u ltip liers
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HF-41
RCA-41025
transistor RCA 383
RCA 7163
TA8647
rca 383 transistor
RCA H 715
transistor C4 0168
RCA microwave oscillator
TA8648
transistor amplifier 1ghz 1500 watts
rca h 641
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MRA1214-55H
Abstract: MRA1214-55
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RA1214-55H The RF Line Microwave Power Transistor . . designed p rim a rily fo r w id e b an d , large-signal o u tp u t and d riv e r a m p lifie r stages in the 1.2 to 1.4 GHz fre q u e n cy range. 6.5 dB 1.2-1.4 GHz
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RA1214-55H
MRA1214-55H
MRA1214-55
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rca 40290
Abstract: RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012
Text: RF Power Transistors A w ide variety o f rf types capable o f h andling a broad range¡of power from hf to m ic ro w a v e frequencies 25, W at 30 MHz to 1 W at 1 GHz , sup- Applications E ie~nm H T ft 7o I T0-60, and TO-72 packages. . l - and S-band radar and telem etry
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to-72
1N1183A-1
1190AA
D2406F-D2406M*
1N3879-1N3883*
D2412F-D2412M*
1N3889-1N3893*
D2520F-D2520M*
1N3899-1N3903*
1N3909-1
rca 40290
RCA 2N3866
rca 40280
2N5070
60890
2N4932
2n4933
rca 2N5070
2N5913
N4012
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaA$ FET> .minM* w M GFC40V6472A 6 .4 — 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 40V 6472A isan internally impedance-matched GaAs power FET especially designed fo r use in 6 . 4 —7 .2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC40V6472A
GFC40V6472A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microw ave Power Transistor . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, In the 0.96 to 1.215 GHz frequency range at high overall duty cycles. • Guaranteed Performance @ 1.215 GHz, 28 Vdc
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MRF10005
MRF10005
RF10005
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0920A L & S BAND G a As FET [ S M D non - matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=32dBm TYP. @ f=1,9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
volta164
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rf21261
Abstract: RF2126 schematic diagram DC POWER SUPPLY power supply schematic 60v
Text: RFEÜ RF2126 MICRO-DEVICES H IG H POW ER L IN E A R A M P L IF IE R T y p ic a l A p p lic a t io n s • 2.5 GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment 2 POWER AMPLIFIERS
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RF2126
RF2126
2500MHz.
RF2126PC8A
rf21261
schematic diagram DC POWER SUPPLY
power supply schematic 60v
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Untitled
Abstract: No abstract text available
Text: RFH RF2126 MICRO DEVICES HIGH POWER LINEAR AM PLIFIER T y p ic a l A p p lic a tio n s • 2.5 GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment 2 A M P L IF IE R S • PCS Communication Systems
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RF2126
RF2126
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Untitled
Abstract: No abstract text available
Text: RFH RF2126 MICRO DEVICES HIGH POWER LINEAR AM PLIFIER T y p ic a l A p p lic a tio n s • 2.5 GHz ISM Band Applications • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment 2 P r o d u c t D e s c r ip tio n
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RF2126
RF2126
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A So«1' Q 5 .9 ~ 6 .4 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 5 9 6 4 A is an internally im pedance-matched GaAs power F E T especially designed for use in 5 .9 —6 .4 GHz band amplifiers. The hermetically sealed metal-ceramic
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GFC39V5964A
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Untitled
Abstract: No abstract text available
Text: Tem ic U2801B S e m i c o n d u c t o r s DECT Single Chip Transceiver Description The U2801B is an RF IC for low-power DECT applica tions. The TQFP48-packaged IC is a complete transceiver including image rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier,
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U2801B
U2801B
TQFP48-packaged
D-74025
13-Apr-99
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PDF
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Untitled
Abstract: No abstract text available
Text: Tem ic U2801B S e m i c o n d u c t o r s DECT Single-Chip Transceiver Description The U2801B is an RF IC for low-power DECT applica tions. The TQFP48-packaged IC is a complete transceiver including image rejection mixer, IF amplifier, FM demodulator, baseband filter, RSSI, TX preamplifier,
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U2801B
U2801B
TQFP48-packaged
D-74025
19-May-99
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PDF
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transistor D 2578
Abstract: BFQ34
Text: DISCRETE SEMICONDUCTORS BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Sem iconductors PHILIPS Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION
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BFQ34
transistor D 2578
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lfsn30n17c
Abstract: DIL00 T2901-FYT LFSN30N17 VCO PARA UHF D218 T2901 TQFP48
Text: Temic T2901 S e m i c o n d u c t o r s Bluetooth Single-Chip Transceiver IC Description The T2901 is a bipolar intergrated circuit manufactured using TEMIC Semiconductors’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band especially for Bluetooth applications.
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t2901
T2901
48-pin
packag60
22-Feb-00
TQFP48
lfsn30n17c
DIL00
T2901-FYT
LFSN30N17
VCO PARA UHF
D218
TQFP48
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