2SC3851
Abstract: 1488A 2SC3851A RL6A2
Text: SavantIC Semiconductor Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SA1488/1488A APPLICATIONS ·Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION
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2SC3851
2SC3851A
O-220F
2SA1488/1488A
O-220F)
2SC3851
1488A
2SC3851A
RL6A2
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2SC3851
Abstract: 2SC3851A npn ic 25mA 2SA1488
Text: Inchange Semiconductor Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1488/1488A APPLICATIONS ・Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION
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2SC3851
2SC3851A
O-220F
2SA1488/1488A
O-220F)
2SC3851
2SC3851A
npn ic 25mA
2SA1488
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2SC3851
Abstract: 2SC3851A 2SC3851 A
Text: JMnic Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1488/1488A APPLICATIONS ・Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION 1 Base 2
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2SC3851
2SC3851A
O-220F
2SA1488/1488A
O-220F)
2SC3851
2SC3851A
2SC3851 A
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PPC2228
Abstract: PPC2229
Text: P P C 45E D PRODUCTS CORP • •4 bflSblll OOQOTia 7 ■ PPC NPN Power Da . Transistor PC2229 r-33-2^ C H IP TYPE: AU FEATURES • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector - Gold - 3,000 A Nominal
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PPC2229
PPC2228
T-33-29
PPC2228
PPC2229
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PPC PRODUCTS CORP
Abstract: 2C4300 2C5333
Text: b ê S b l S l □□OG'iS? TO? • PPC NPN Power Transistor Chips T -3 > 3 > - o \ FEATURES CHIP TYPE: AP • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness ■ 10 Mils Nominal
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2C5333
2C4300
2C4300
PPC PRODUCTS CORP
2C5333
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2C4031
Abstract: 2C4030 2C4032 2C4033 ic4010
Text: P P C P R O D U C T S CORP 2C4030 2C4032 LjOE D bflSblll DDDO' ìSLd T7Q • PPC PNP Low Power Transistor Chips 2C4031 2C4033 I ^T-33-O \ FEATURES CHIP TYPE: AJ • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 20,000 A Nominal
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-T-33-0
2C4030
2C4031
2C4032
2C4033
150mA,
500mA,
ic4010
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2C6211
Abstract: 2C6212 2C6213 2C6214
Text: P P C PRODUC TS Q D • | ■ I CO R P bOE 2C6211 2C6213 D tfiStlIl □ÜDDRb5 TÖ3 ■ PPC PNP High Voltage Power Transistor Chips 2C6212 2C6214 "P3VO\ FEATURES CHIP TYPE: AL • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal
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2C6211
2C6212
2C6213
2C6214
2C6211
2C6212
-125mA
-125mA,
-200V
2C6212
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PDF
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2C4300
Abstract: 2C5333 chip die npn transistor
Text: P P C PRODUCTS CORP bDE D • b flS b m □DOO'ìba 1GG W PPC PNP Power Transistor Chips 2C5333 FEATURES CHIP TYPE: AP • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 10 Mils Nominal
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2C5333
2C4300
2C5333
2C4300
chip die npn transistor
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PDF
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lc 5013
Abstract: 2C5012 2C5013 2C5014 2C5015 LE50
Text: P P C PRODUCTS CORP 2 2( 12 »13 böSbm bOE » □DOQ'iSfl fl43 • PPC NPN High Voltage Low Power Transistor Chips 2C5014 2C5015 ~ r - 1*7-0 \ CHIP TYPE: AA FEATURES • Triple Diffused, Planar Design • Base, Em itter M etallization: Alum inum • M etallization Thickness: 20,000 A Nom inal
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2C5012
2C5014
2C5013
2C5015
2C5015
50/ia
lc 5013
LE50
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PDF
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2C2151
Abstract: 120VDC
Text: P P C PRODUCTS bOE CORP ¡ PPC D 5-A NPN Power Transistor Chips 2C2151 pp Vs-oi FEATURES CHIP TYPE: AN • Epitaxial, Planar Design • C ontact M etallization: Base, Em itter - Alum inum - 30,000 A Nominal C ollector - Gold - 3,000 A Nom inal • Die Thickness - 1 0 Mils N om inal
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30Vdc,
300/xs,
2C2151
120VDC
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Untitled
Abstract: No abstract text available
Text: m m a PPC, he. • Micmsemi Progress Powered by Technology 7516 C entral In d u s tria l D rive R iv ie ra B each, F lo rid a 33404 PHONE: 561 842-0305 FAX: (561)845-7813 APPLICATIONS: • • • Drivers Switches Medium-Power A m plifiers FEMURS: • •
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2N3766
2N3740)
300jaS,
MSC1039
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PDF
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Untitled
Abstract: No abstract text available
Text: m m a PPC, he. • Micmsemi Progress Powered by Technology 7516 C entral In d u s tria l D rive R iv ie ra B each, F lo rid a 33404 PHONE: 561 842-0305 FAX: (561)845-7813 APPLICATIONS: • • • Drivers Switches Medium-Power A m plifiers FEMURS: • •
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2N3741A
300jaS,
MSC1042
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PDF
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BD947
Abstract: to-53 a/TO111
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .
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SDT3762
SDT3752
SDT1641
SDT3305
BD947
to-53
a/TO111
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TO111
Abstract: 2SD189 to-53 2SC647 2SD772B
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT •CBO Max ON) Min (Hz) (A) r Max (s) Max (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or Mor , (Cont'd) . . . .5 -10 2SD772 2SD772A
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2SD772
2SD772A
2SD772B
CX702
BD951
BD952
SDT6012
TO111
2SD189
to-53
2SC647
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2N7373
Abstract: JANS2N5153 2N5154 TO-254 2N7372 datasheet 2N7373 transistor 2N5005 2N7372 Schottky jans JANS2N5004
Text: Spring/Summer 1998 Bipolar Transistors by Carlton B. Mowry, Microsemi PPC, Inc., cmowry@microsemi.com Bipolar transistors have been used in Although only a few space applications for years. There is a examples have been history of device types that are furnished, there are many
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O-254
O-254
1x105
O-254,
2N7373
JANS2N5153
2N5154
TO-254
2N7372 datasheet
2N7373 transistor
2N5005
2N7372
Schottky jans
JANS2N5004
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2SA1106 SANKEN
Abstract: TO247s BD141 PNP 2sc1116A sanken 2SA1186 SANKEN BU124 texas SDT7605 2sA747A sanken BU124 2SB705
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE fT ON) Min (Hz) ICBO *ON r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . -10 -15 20 . .
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BDX22
TIP33E
TIP34E
2SC409
2SC410
2SA1106
2SA747A
2SC2837
2SA1007A
2SC2337A
2SA1106 SANKEN
TO247s
BD141 PNP
2sc1116A sanken
2SA1186 SANKEN
BU124 texas
SDT7605
2sA747A sanken
BU124
2SB705
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BDY96
Abstract: DTS519 60M6 2n2114 IR519
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Max hFE fT •CBO Max t0N Max Of) ON) Min (HZ) (A) (8) PD r (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40
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BU131
BDY97
SDT7909
BU107
XGSR7530
SDT7809
BDY96
DTS519
60M6
2n2114
IR519
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PDF
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DTS517
Abstract: BUV28A
Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(8R)CEO Of) PD Max ON) hFE fT 'CBO Max t0N Max Min (HZ) (A) (s) r (CE)ut Max Toper Max (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15
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SDT7207
SDT7612
2N2229
2N3473
2N2233
2N3477
SDT12201
DTS517
BUV28A
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KT827A
Abstract: SDT7530 SDT80 1748-1820 BLX84 BLX86 sk3561 BLX87
Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A hFE fT ICBO Max Max ton Max on ON) Min (Hz) (A) (a) 97 100 100 100 100 100 100 122 122 125 150 150 175 175 175 175 175 175 175 20 75 30 30 750 10 30 30 20 20 20 20 20 20 30 175
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SDT3876
SML8003
SML8013
SML8016
SML8071
2N4211
2N3599
SDT44333
KT827V
KT827A
SDT7530
SDT80
1748-1820
BLX84
BLX86
sk3561
BLX87
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KT827B
Abstract: KT935A BDX61 kt827 rcs258 TO3VAR package
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT •CBO Max PD Max toN Max ON) Min (Hz) (A) (8) r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 MRF422 MRF422 PT9780
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MRF422
PT9780
2N2739
2N2745
2N2751
2N1823
StR-5/16
KT827B
KT935A
BDX61
kt827
rcs258
TO3VAR package
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PDF
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BD160
Abstract: 2SC3303 2SD1147 to-53 2sb550
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .
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2N3192
2N1208
2N1250
2N2384
2N4902
2N5867
2N5869
2N4905
2N5068
2N4914
BD160
2SC3303
2SD1147
to-53
2sb550
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PDF
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2S721
Abstract: bdy11 TO53 to-53 TO5-3 KT932A SDT5913
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE on hFE fT ICBO Max Max k>N Max ON) Min (Hz) (A) (s) PD r (CE)Mt Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts r More, (Cont'd) . . . .5 . . . .10 . . . .15 .
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ST450
2S013
2N2383
2S721
2S723
2N3138
bdy11
TO53
to-53
TO5-3
KT932A
SDT5913
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2u 62 diode
Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15
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BD610
BDS11
BDS14
2SD213
2N5006
2N5007
2N5623
2N5624
2SA746
2SA877
2u 62 diode
2SC1115
bd313
KT808BM
sdt7603
2u 87 diode
2u 45 diode
diode 2U 66
bdy19
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PDF
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MIL-S-19500
Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S
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2N497
2N498
2N656
2N657
2N696
2N697
2N1131
2N1132
2N718A
2N1613
MIL-S-19500
2902n
TRANSISTOR 2n697
2N3700 DIE
MIL-S-19500 FOR POWER LINE TRANSISTOR
2N497
2N497 JAN
2n2222 jan
2N657
2N910 JAN
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