POWER3 Search Results

Contextual Info: DC1204E Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node

Contextual Info: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node

led flashlight

Abstract: sm power3 SGOLD3
Contextual Info: Pr oduc t Br ief P M B 6 821 SM -Power3 - Highly Integrated Power Ma nagement Units fo r Feature Rich Mobile De vi ces S M - P O W E R 3 extends the SM-Power family with a new highly integrated power management IC. It is optimized to support mobile devices

POWER33

Abstract: IPCA610D sac 305 IPC-SM-7525A J-STD-001C IPC-A-610D IPC-4101B FDMC8554 IPC-7525 FDMC2523P
Contextual Info: AN-9040 Assembly Guidelines for Power33 Packaging By Dennis Lang INTRODUCTION BOARD MOUNTING The Fairchild Power33 uses a flat leaded package to achieve SO-8 type performance in a form factor that is 70% smaller. This packaging technology has been increasingly used for power related

Contextual Info: SOLITRON DEVICES INC 61C POWER3 TRANSISTORSTR0N D E V Ip E S INC SP45C1 SP45C2 SP45C3 SP45G4 SP45C7 SP45C8 SP45G9 SP45C10 SP45C5 SP45C11 OHIO SP45C6 ~ SP45C12 T - 3 3~/f PNP SILICON POWER TRANSISTORS MEDIUM POWER 4 AMPERES FEATURES PLANAR CONSTRUCTION MEDIUM POWER

Contextual Info: TEO124 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power300m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StyleN/A Mounting Style-

FDMC8200S

Abstract: Power33 byr10-100
Contextual Info: FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 20 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing

Contextual Info: FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 20 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing

Contextual Info: PG0115X Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz) Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage40 I(Oper.) Typ.(A) Oper. Current Semiconductor Material Package StylePill-C Mounting StyleS

WTL1232

Abstract: WTL1233 tcl 1232 Weitek 1233 L1232 weitek 1233-8 268-5400 weitek IC to design 2 by 2 binary multiplier 3332 weitek
Contextual Info: W E IT E K ^ J WTL1232/WTL1233 FLOATING POINT MULTIPLIER AND ALU July, 1986 TheWTL 1232floatingpoint multi­ plier and the WTL 1233 floating point ALU provide high speed, low power32-bitnumericprocessing. In the highest speed grades, each chip delivers 10MFLOP singleprecision

Contextual Info: FDMC7200 Dual N-Channel PowerTrench MOSFET 30 V, 12 mΩ and 23.5 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 23.5 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node

Contextual Info: DC1254E Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current200m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: PGG206-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power300m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage100 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: FDMC7200S Dual N-Channel PowerTrench MOSFETs 30 V, 22 mΩ, 10 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a dual power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing

Contextual Info: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node

sot-23 pinout

Abstract: 431 sot23-5 FAN21SV06 11n60f FAN7385 FAN7382 FAN7380 fan3000 5N60 datasheet 4N60 fairchild
Contextual Info: Power Seminar 2007 – New Product Update Q3/Q4 Jon Harper, Market Development Manager, Industrial & White Goods Systems, Europe September 2007 www.fairchildsemi.com Products for Power Supplies • • • • • Power33 and Power56 MOSFETs Low input voltage drivers: FAN3xxx

DIN 6120

Abstract: ECMA-109 iso 9995 keyboard
Contextual Info: Swedish IT-companies´ Organisation Sweden Norwegian Office and IT-companies Organisation Norway IT-Brancheforeningen Kontor & Data Denmark Version June 1998 ECO Declaration DK, NO, SE Model Brand 7044 - 170 Product type RS/6000 Manufacturer 64Bit copper Power3-II Microprocessor

Contextual Info: TEPO25 Diodes Pulse-Mode Gunn Diode P o Min.(W) Output Power30 Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current7.0 Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: FDMC7200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 22 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing

CQ116

Abstract: FDMC8200
Contextual Info: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node

ADCC

Abstract: EVAL-ADF7023-JDB1Z ADF70 wireless encrypt EVAL-ADF7023-JDB2Z CRC-16-IBM LOG TX 2 1033 14 pin IC
Contextual Info: Data Sheet High Performance, Low Power, ISM Band FSK/GFSK/MSK/GMSK Transceiver IC ADF7023-J FEATURES Ultralow power, high performance transceiver Frequency bands: 902 MHz to 958 MHz Data rates supported: 1 kbps to 300 kbps 2.2 V to 3.6 V power supply Single-ended and differential power amplifiers PAs

Contextual Info: Coaxial Precision Fixed Attenuator 50Ω 2W 15dB Maximum Ratings Operating Temperature DC to 18000 MHz Features -55°C to 100°C Storage Temperature BW-S15W2+ -55°C to 100°C* *With mated connectors, unmated, 85°C max. • DC to 18000 MHz • precise attenuation

Contextual Info: Coaxial Precision Fixed Attenuator 50Ω 2W 1dB Maximum Ratings BW-S1W2+ DC to 18000 MHz Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C* *With mated connectors, unmated, 85°C max. • DC to 18000 MHz • precise attenuation