POWER TRANSISTOR BD 125 Search Results

Contextual Info: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD W 23A 60

lem HA 10000

Abstract: BDW23 lem HA 100MA 45 V NPN BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B
Contextual Info: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit 45 V : BD W 23A

93c100

Contextual Info: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 94, BD W 94A, BD W 94B and BD W 94C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V : BD W 93A

Contextual Info: BDW24/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 23, BD W 23A, BD W 23B and BD W 23C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollecto r E m itter V oltage : BD W 24

BDW93C

Abstract: BDW93 NPN Transistor TO220 VCEO 80V 100V bdw93c applications BDW93C TRANSISTOR 100MA 45 V NPN BDW94 BDW93A BDW93B BDW94A
Contextual Info: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 94, BD W 94A, BD W 94B and BD W 94C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector E m itter V o lta g e : BD W 93

pin configuration transistor bd140

Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

BD138

Abstract: bd140 Complement BD136 bd139 Complement transistor BD140 BD135 BD137 BD139 BD140 power transistor bd136
Contextual Info: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD135, BD 137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol C ollector Base Voltage :B D 1 3 6 : BD138 : BD140 C ollector E m itter Voltage : BD 136

Contextual Info: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ‘ Collector Base Voltage : BD176 : BD178 : BD180 Collector Emitter Voltage

Contextual Info: BDX33/A/B/C NPN EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINER AND SWITCHING APPLICATIONS • C om plem ent to BD X34/34A/34B/34C respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol : BDX33

Contextual Info: BDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD X33/33A/33B/33C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Sym bol Rating

BDX34C

Abstract: BDX34 BDX34B BDX34A transistor bdx34c transistor BDX34 65
Contextual Info: BDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD X33/33A/33B/33C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector Base : BDX34

transistor bd176

Abstract: bd178 bd180 E434
Contextual Info: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS Characteristic ‘ Collector Base Voltage Collector Emitter Voltage Rating Unit -45

Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol BD234 Rating VcBO BD236 BD238 Collector Emitter Voltage

60V transistor npn 1a

Contextual Info: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD233 Symbol Rating VcBO : BD235 : BD237 Unit 45 V

TRANSISTOR 536

Abstract: 536 transistor BD538 TRANSISTOR BD538 BD536 BD534 BD533 BD535 BD537 IC-101 FAIRCHILD
Contextual Info: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD533, BD 535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit -4 5 V : BD536 - 60 V : BD538

BD533

Abstract: BD537 TRANSISTOR BD533 BD534 BD535 BD536 BD538 101b1 60V transistor npn 2a switching applications
Contextual Info: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD534, BD 536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD535 60 V : BD537

TRANSISTOR BD533

Abstract: BD533 BD534 BD535 BD536 BD537 BD538 60V transistor npn 2a 60V transistor npn 2a switching applications
Contextual Info: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD534, BD 536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD535 60 V : BD537

BD178

Abstract: BD176 BD180 transistor bd176
Contextual Info: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

transistor BD 325

Abstract: BD235STU
Contextual Info: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

BD175

Contextual Info: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

transistor BD 325

Contextual Info: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

BD238

Abstract: BD234 BD236
Contextual Info: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Symbol BD234 C ollecto r E m itter Voltage Rating

BD233

Abstract: BD235 BD237
Contextual Info: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

transistor bd176

Abstract: BD176 BD178 BD180 transistor BD 325
Contextual Info: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol