POWER TRANSISTOR 800V 5A Search Results

transistor 2sc4237

Abstract: power TRANSISTOR 800V 5A transistor 800V 1A 2SC4237 TV power transistor datasheet transistor Ic 1A datasheet NPN npn switching transistor Ic 5A transistor transistor Ic 1A NPN transistor 03 NPN
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4237 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

BU4508DF

Abstract: power TRANSISTOR 800V 5A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4508DF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of

2SC4119

Abstract: 2548B
Contextual Info: Ordering number: EN 2 5 4 8 B _ 2SC4119 NPN Triple Diffused Planar Silicon Darlington Transistor N0.2548B 800V/15A Driver Applications Applications . Induction cookers . High-voltage, high-power switching Features . High speed adoption of MBIT process

2SC4119

Contextual Info: Ordering number:EN2548B NPN Triple Diffused Planar Silicon Darlington Transistor 2SC4119 800V/15A Driver Applications Applications Package Dimensions • Induction cookers. · High-voltage , high-power switching. unit:mm 2048A [2SC4119] Features · High speed adoption of MBIT process .

2SC4119

Abstract: DARLINGTON 5A 1500V
Contextual Info: Ordering number:EN2548B NPN Triple Diffused Planar Silicon Darlington Transistor 2SC4119 800V/15A Driver Applications Applications Package Dimensions • Induction cookers. · High-voltage , high-power switching. unit:mm 2048A [2SC4119] Features · High speed adoption of MBIT process .

Contextual Info: bOE D • A1331Ô7 ODGDSQfl QMS ■ SMLB SEMELAB PLC SEMELAB 'T S V lS BU L48B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A TA D im ension s in m m • SEMEFAB DESIGNED A N D DIFFUSED • HIGH VOLTAGE VCE>0= 800V

5011s

Abstract: 2SC3846
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 QOlbbBM S Q F f l l T '3 3-/3 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Temperature Range

2SC3843

Abstract: 2SC3846 2SC3842 5011s 2SC3844 2SC3845 2SC3847 2SC3947 2SC3948 2SC3949
Contextual Info: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 Q O l b b B M S Q F f l I T~23 cP January 1990 Edition 1.1 FUJITSU P R O D U C T P R O F IL E - 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O L U T E MAXIMUM R A T IN G S Parameter

Contextual Info: « RURP1570, RURP1580, RURP1590, RURP15100 ¡11995 1 5A, 700V - 1000V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery Characteristic tRR< 100ns JEDEC TQ-220AC ANODE • +175°C Rated Junction Temperature CATHODE • Reverse Voltage Up to 1000V

Diode B2x

Abstract: E80276 QM150DY-3H
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM150DY-3H HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-3H • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1400V hFE DC current gain. 100

2SC2792

Contextual Info: TO SH IBA 2SC2792 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC2792 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. . HIGH SPEED DC-DC CONVERTER APPLICATIONS. • • ¿3.2 ±0.2 Excellent Switching Times (l0 = O.5A

NTE386

Abstract: npn 10a 800v
Contextual Info: NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited

transistor Electronic ballast

Abstract: 15A POWER TRANSISTOR FOR SMPS MJE13003 Electronic ballast 11W MJE13005 mje13005 ballast mje13003 ballast MJE13007 electronic ballast MJE13005 electronic ballast with MJE13007
Contextual Info: “Quality First” First” First & Best KEC Power Transistor MJE Series Device APP MKTMKT-G “Quality First” First” First & Best Power Transistor (MJE Series) ▣ Application High Voltage Switch Mode ▣ Feature High Speed Switching High Voltage Capability

TRANSISTOR J 5804 NPN

Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Contextual Info: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV

infineon power cycling igbt3

Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Contextual Info: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,

KSD5001

Abstract: KSD5002 tv samsung samsung tv T 33 16AF
Contextual Info: SAMSUNG SEMICO NDU CTO R 1ME D INC | Q 0 0 ?b 3 fl 7 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5001 T-33-1 3 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN HIGH Collector-fiaM Voltage' Vcao=1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25° C)

2SC2792

Contextual Info: TOSHIBA 2SC2792 2SC2792 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE INDUSTRIAL APPLICATIONS SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Excellent Switching Times l0 = O.5A tr=1.0/^s Max. tf^l.O/^s Max.

Contextual Info: , Una. J x TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2N6751 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(sus)= 400(Min.) • High Switching Speed

2SC3927

Abstract: DSA0016508
Contextual Info: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC

2SC3927

Contextual Info: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA V V(BR)CEO IC=10mA 550min V VCE=4V, IC=5A 10 to 28 10(Pulse15) A hFE IB 5 A VCE(sat) PC 120(Tc=25°C) W VBE(sat) Tj 150 °C fT –55 to +150

transistor 800V 1A

Contextual Info: bOE D fll331fl? 000051b 111 • S N L B SEMELAB PLC SEMELAB 'T J 'S - v l? BUL54B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensionsin mm Designed for use in electronic ballast lighting applications

BUX80

Abstract: 928 transistor NPN Transistor 50A 400V
Contextual Info: BUX80 Power Transistor High Voltage Power Transistors are designed for use in high-voltage, high-speed, power switching in inductive circuit, motor control, solenoid and relay drivers. Features: • Collector-Emitter Sustaining VoltageVCEO sus = 400V (Minimum).

c120 transistor

Abstract: BU508A ts 4141 TRANSISTOR transistor BU508A Data- sheet transistor k 1119 transistor 800V 1A transistor data cd BU508A to3p TRANSISTOR BU508A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508A TO- 3PN Non Isolated Plastic Package Color TV Horizontal Output Application No Damper Diode ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise )

TS 4142

Abstract: LC04A KSD73 100V transistor npn 5a KSD288 ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142
Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC KSC5030 D I 00075*14 2 NPN SILICON TRANSISTOR T-33- HIGH VOLTAGE AND HIGH RELIABILITY HIQH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Collector-Base Voltage Coilector-Emitter Voltage Emitter-Base Voltage