dlc10
Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts package 20223 si1206 r410a
Text: ERICSSON ^ PTB 20151 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter HF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended
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ATC-100
G-200
BCP56
dlc10
RF NPN POWER TRANSISTOR 3 GHZ 200 watts
package 20223
si1206
r410a
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Untitled
Abstract: No abstract text available
Text: e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended
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1-877-GOLDMOS
1301-PTB
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ericsson 20151
Abstract: 9434 1198E bav 17 diode
Text: e PTB 20151 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20151 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended
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ATC-100
G-200
1-877-GOLDMOS
1301-PTB
ericsson 20151
9434
1198E
bav 17 diode
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PDF
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828 TRANSISTOR equivalent
Abstract: No abstract text available
Text: e PTB 20230 45 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended
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1-877-GOLDMOS
1301-PTB
828 TRANSISTOR equivalent
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth
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AFT20P140--4WN
AFT20P140-4WNR3
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C5750X7S2A106KT
Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth
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AFT20P140--4WN
AFT20P140-4WNR3
AFT20P140--4WN
C5750X7S2A106KT
AFT20P140-4WNR3
aft20p140-4wn
aft20p140
TRANSISTOR GF 507
MXc 501
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Johanson Piston Trimmer
Abstract: G200 RF TRANSISTOR 2GHZ
Text: e PTB 20125 100 Watts, 1.8–2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended for 26 Vdc class AB operation from 1.8 to 2.0 GHz. Rated at 100 watts PEP minimum output power, it is specifically intended for operation as a
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1-877-GOLDMOS
1301-PTB
Johanson Piston Trimmer
G200
RF TRANSISTOR 2GHZ
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lc 945 p transistor NPN TO 92
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor D escription The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended
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Untitled
Abstract: No abstract text available
Text: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP
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G-200,
1-877-GOLDMOS
1301-PTB
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c38 transistor
Abstract: 3 w RF POWER TRANSISTOR NPN 5.8 ghz
Text: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation across the 1.8 to 2.0 GHz band. Rated at 100 w atts PEP minim um output power, it is specifically intended for
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R2C TRANSISTOR
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is an NPN, push-pull RF power transistor intended tor 26 Vdc class AB operation from 1,8 to 2.0 GHz. Rated at 100 w atts PEP minimum output power, it is specifically intended for operation as a
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Ericsson 20082
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion
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Collector-91
Ericsson 20082
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PDF
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Untitled
Abstract: No abstract text available
Text: ERICSSON ^ PTB 20170 30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP
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Curre195
G-200,
BCP56
BAV99
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PDF
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Ericsson 20082
Abstract: 20082 PTB 20082
Text: e PTB 20082 15 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion
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1-877-GOLDMOS
1301-PTB
Ericsson 20082
20082
PTB 20082
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SMT resistor
Abstract: TRANSISTOR 185
Text: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts power output, it may be used for both CW and PEP applications. Ion
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G-200,
1-877-GOLDMOS
1301-PTB
SMT resistor
TRANSISTOR 185
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MPS 4355 transistor
Abstract: MM8009 mps 0737
Text: Order this document by MM8009/D MM8009 The RF Line 0.9 W - 1.0 G H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed fo r am plifier, frequency m ultiplier, or oscillator applica tions in m ilitary and industrial equipment. Suitable for use as output,
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MM8009/D
MM8009
MPS 4355 transistor
MM8009
mps 0737
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transistor 131 8D
Abstract: transistor k 3728 QBE+61.2+dp2
Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran
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BLY90
transistor 131 8D
transistor k 3728
QBE+61.2+dp2
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BLY90
Abstract: Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D
Text: PHILIPS INTERNATIONAL 41E ]> • 711002b 0 0 2 7 ^ A b «PHIN BLY90 T-33-13 V.H.F. POWER TRANSISTOR - N-P-N epitaxial planar transistor intended for use in class-A, 8 and C operated mobile, industrial and military transmitters witlr a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran
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711002b
BLY90
T-33-13
7z67566
BLY90
Wf VQE 23 F
WE VQE 23 E
wf vqe 23
WF VQE 11 E
WF VQE 23 E
WE VQE 11 E
IEC134
philips Trimmer 60 pf
WF VQE 23 D
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PDF
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Untitled
Abstract: No abstract text available
Text: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is
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BLX69A
bb53c
bb53131
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2SA1964
Abstract: 2SC5248 SC-75A T0220FP VCEO160V
Text: 2SA1964 2SC5248 Transistors High-voltage Switching Audio output amplifier transistor, Stabilized power supply transistor 2SA1964 •Feature« •A b s o lu te maximum ratings ( T a = 2 5 t ) 1 ) R at DC current gain characteristics. 2 ) High breakdown voltage. {B V ce o » *— 1 6 0 V )
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2SA1964
2SC5248
2SA1964
150MHz)
2SC5248.
T0220FP
Tc-25
O-220FP
O-220
SC-75A
VCEO160V
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PDF
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philips 3595
Abstract: BLX69 BLX69A 60306 cm 3593
Text: 86D 0 1790 D T i N AMER P H I L I P S / D I S C R E T E ObE D • BLX69A bbSBTBl 0014028 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V, The transistor is resistance stabilized and is
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BLX69A
philips 3595
BLX69
BLX69A
60306
cm 3593
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PDF
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a1270* transistor
Abstract: computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141
Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2
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R123-R181,
5091-6489E
5968-1410E
a1270* transistor
computer controlled infrared
M113
C-15
IEEE488
diode ed 2437
AT-8141
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PDF
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BLX69A
Abstract: BLX69 7Z66 TRANSISTOR D 1978
Text: PH I L IP S I N T E R N A T I O N A L MAINTENANCE TYPE 41E D • 711002b, D0E7Ö1S 1 I PHIN BLX69A r - 3 3 - n U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and Is
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711002b
BLX69A
T-33-IÃ
BLX69A
BLX69
7Z66
TRANSISTOR D 1978
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PDF
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a1270* transistor
Abstract: 1689c hp plotter
Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2
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5091-6489E
5968-1410E
a1270* transistor
1689c
hp plotter
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